atek electrical components Germany atek model atek price

atek electrical components include single heterojunction, double heterojunction, and quantum well laser diodes. Quantum well laser diodes have the advantages of low threshold current and high output power, making them mainstream products in market applications. Compared with lasers, laser diodes have the advantages of high efficiency, small size, and long service life, but their low output power, poor linearity, and less than ideal monochromaticity greatly limit their application in cable television systems, preventing the transmission of multi-channel, high-performance analog signals. In the return module of a bidirectional optical receiver, upstream transmission generally uses quantum well laser diodes as the light source.

atek electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by contact between metal and semiconductor. Metal materials can be aluminum, gold, molybdenum, nickel, titanium, etc., and the semiconductor is usually silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N-type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without causing excessive series resistance, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is known, there are a large number of conductive electrons inside a metal conductor. When metal contacts a semiconductor (with a distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the sub-levels corresponding to the conduction band of the semiconductor within the metal, the electron density is lower than the electron density in the conduction band of the semiconductor. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, negative charge is distributed only within a thin layer on the surface with atomic-scale thickness. For N-type semiconductors, donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a potential barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region to the metal. As thermionic emission increases the built-in field, the drift current, which is opposite to the diffusion current, increases, finally reaching dynamic equilibrium and forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (positive voltage to the metal, negative voltage to the semiconductor), the built-in field is weakened, the barrier on the semiconductor side is lowered, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field is strengthened, the barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, like SBD and PN junction diodes, it is a nonlinear device with unidirectional conductivity.

atek electrical component types

For different application scenarios, the purpose of applying varistors varies, and the voltage/current acting on the varistor should not be the same, so the requirements for varistors are also different. It is very important to distinguish these differences for correct use. According to different purposes, varistors can be divided into two categories: ① protective varistors, ② circuit function varistors. Protective resistors: (1) Distinguish whether it is a power supply protection varistor or a signal line/data line protection varistor; they must meet different technical standards. (2) Depending on the continuous operating voltage applied to the varistor, cross-power-line varistors can be classified into AC type or DC type, with different aging characteristics under these two types of voltage stress. (3) Based on the abnormal overvoltage characteristics that the varistor can withstand, varistors can be categorized into three types: surge suppression type, high power type, and high energy type. 1. Surge suppression type varistors refer to those used to suppress transient overvoltages such as lightning-induced overvoltage and operational overvoltage. The occurrence of this transient overvoltage is random and non-periodic, and the peak current/voltage may be very large. Most varistors belong to this category. 2. High power type varistors refer to those used to absorb periodic pulse groups, such as varistors connected in parallel across switching power converters. Here, the impact voltage occurs periodically, and the period is known. The energy value can generally be calculated, and although the peak voltage is not very high, due to the high frequency of occurrence, its average power is quite significant. 7. High energy type varistors refer to those used to absorb magnetic energy from large inductive coils such as generator excitation coils and lifting electromagnet coils. For such applications, the main technical indicator is energy absorption capability. In most cases, the protective function of varistors can act repeatedly, but sometimes they are made into "one-time" protective devices similar to current fuses. For example, varistors with short-circuit contacts connected in parallel across certain current transformer loads.

atek electrical component varieties

① Electron tubes can be classified by their uses into voltage amplification tubes, power amplification tubes, gas-filled tubes, thyratrons, ignitrons, frequency conversion tubes, rectifier tubes, detector tubes, tuning indicator tubes (magic eye), voltage regulator tubes, etc. ② Electron tubes can be classified by the number of electrodes into voltage amplification tubes, triodes, tetrodes, pentodes, hexodes, heptodes, octodes, enneodes, and compound tubes. Tubes with more than three electrodes are also called multi-electrode or multi-grid tubes. ③ Electron tubes can be classified by their shape and casing material into bottle-shaped glass tubes (ST tube), "acorn" tubes, cylindrical glass tubes (GT tube), large glass tubes (G style tube), metal-ceramic tubes, small tubes (also called peanut tubes or finger tubes, MT tube), lighthouse tubes, ultra-miniature tubes (pencil-shaped tubes), etc. ④ Electron tubes can be classified by internal structure into single diodes, diodes, dual-diode triodes, dual diodes, single triodes, power pentodes, beam tetrodes, beam pentodes, dual diodes, diode-pentode composite tubes, beam tetrodes again, triode-pentode composite tubes, triode-hexode composite tubes, triode-heptode composite tubes, and various other types like beam power output stages. ⑤ Electron tubes can be classified by cathode heating method into directly heated cathode electron tubes (current passes directly through the cathode to achieve thermionic emission) and indirectly heated cathode electron tubes (heating the cathode via a filament beside it). ⑥ Electron tubes can be classified by shielding method into sharp cutoff shielded electron tubes and remote cutoff shielded electron tubes. ⑦ Electron tubes can be classified by cooling method into water-cooled electron tubes, air-cooled electron tubes, and naturally cooled electron tubes.

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