ATR electrical components Germany ATR models ATR prices

ATR electrical components are common light-emitting devices that emit light by releasing energy through electron-hole recombination, and they are widely used in the lighting field. Light-emitting diodes can efficiently convert electrical energy into light energy and have extensive applications in modern society, such as in lighting, flat-panel displays, and medical devices. This electronic component first appeared in 1962, initially emitting only low-intensity red light. Later, versions emitting other monochromatic lights were developed, with emitted light covering the visible spectrum, infrared, and ultraviolet ranges, and brightness significantly improved. Its applications evolved from initial use as indicator lights and display panels; light-emitting diodes are abbreviated as LED. They are made from compounds containing gallium, arsenic, phosphorus, nitrogen, etc. When electrons and holes recombine, they radiate visible light, making them suitable for manufacturing light-emitting diodes. They serve as indicator lights in circuits and instruments, or form text and numeric displays. Gallium arsenide diodes emit red light, gallium phosphide diodes emit green light, silicon carbide diodes emit yellow light, and gallium nitride diodes emit blue light. Based on chemical properties, they are divided into organic light-emitting diodes (OLED) and inorganic light-emitting diodes (LED). LED was initially used for indicative lighting in instruments and meters, later expanding to traffic signals, landscape lighting, automotive lighting, and mobile phone keypads and backlights. Later, new technology for micro-light-emitting diodes (micro-LED) emerged, significantly reducing the size of traditional light-emitting diodes. Arrays of independently emitting red, blue, and green micro-LEDs form display arrays for display technology applications. Micro-LEDs feature self-emissive display characteristics, offering higher efficiency, longer lifespan, and greater stability with less susceptibility to environmental influences compared to self-emissive organic light-emitting diodes.

ATR electrical component principles

A photodiode is a semiconductor device that converts optical signals into electrical signals. Its core part is also a PN junction. Compared to standard diodes, the structural difference is that the PN junction area is made as large as possible to facilitate incident light reception, the electrode area is minimized, and the junction depth of the PN junction is very shallow, generally less than 2 micrometers. Photodiodes operate under reverse bias. Without illumination, the reverse current is very small, known as dark current. When illuminated, photons carrying energy enter the PN junction and transfer energy to bound electrons in covalent bonds, causing some electrons to break free from the covalent bonds, thereby generating electron-hole pairs, known as photocarriers. Under reverse bias, these carriers participate in drift motion, significantly increasing the reverse current. The greater the light intensity, the larger the reverse current. This characteristic is called "photoconductivity." The current generated by a photodiode under normal illumination is called photocurrent. If a load is connected in the external circuit, the load receives an electrical signal that varies correspondingly with changes in light. Photodiodes are widely used photosensitive devices in electronic circuits. Like standard diodes, photodiodes have a PN junction. The difference is that the photodiode housing has a transparent window to receive light for photoelectric conversion. In circuit diagrams, the textual symbol is generally VD.

ATR electrical component types

Inductors can be made by winding conductive material, typically copper wire, around a magnetic core. The magnetic core can also be removed or replaced with ferromagnetic material. Core materials with higher permeability than air constrain the magnetic field more tightly around the inductor component, thereby increasing inductance. There are many types of inductors. Most are made with enamel-coated coils wound around ferrite bobbins, while some shielded inductors place the coil entirely within the ferrite core. The cores of some inductor components are adjustable, allowing the inductance value to be changed. Small inductors can be directly etched onto PCB boards using a spiral trace layout method. Low-value inductors can also be manufactured in integrated circuits using the same processes as transistors. In these applications, aluminum interconnects are often used as conductive material. Regardless of the method, due to practical constraints, the most commonly used approach is a circuit called a "gyrator," which uses a capacitor and active components to exhibit the same characteristics as an inductor component. Inductor components used for blocking high frequencies are often constructed from a metal wire passing through a magnetic pillar or bead.

ATR electrical component principles

The alternating current generated by an automotive alternator is converted into direct current by a rectifier, but its waveform still exhibits irregular fluctuations, which directly affect the accuracy of vehicle ignition. The output voltage cannot remain relatively constant, causing variations in the energy of each spark plug ignition. This can easily lead to engine vibration, gear shift jerkiness, slow and weak acceleration, unstable idling, and low efficiency of the automotive air conditioning system. Consequently, the performance and service life of onboard electrical equipment are significantly reduced. Furthermore, as the wiring systems of older vehicles age and circuit impedance increases, the impact on the vehicle becomes increasingly apparent. The role of an electronic rectifier is to help eliminate noise interference, stabilize output voltage, improve the instantaneous discharge capability of the power system, increase torque output, accelerate throttle response, extend battery service life, shorten engine start-up time, and improve ignition efficiency. These effects are particularly noticeable in small-displacement vehicles. A semiconductor PN junction conducts a large current when forward-biased and a small current when reverse-biased. A rectifier diode is a PN junction diode that utilizes this unidirectional conductivity of the PN junction to convert alternating current into direct current. Devices with a current capacity below 1 ampere are typically referred to as rectifier diodes, while those above 2 amperes are called rectifiers. Common semiconductor rectifiers include silicon rectifiers and selenium rectifiers. They come in many specifications, with voltages ranging from tens to thousands of volts and currents from several amperes to thousands of amperes. Rectifiers are widely used in various forms of rectified power supplies. High-power rectified power supplies require rectifiers with high current capacity, high breakdown voltage, and good heat dissipation. However, such devices have large junction areas and high junction capacitance, resulting in very low operating frequencies, generally below tens of kilohertz. Silicon has a wide bandgap and good thermal conductivity, making it suitable for manufacturing high-power rectification devices. High-voltage silicon stacks are often used in high-voltage rectification devices. They consist of multiple rectifier die connected in series. Their reverse withstand voltage is determined by the withstand voltage of the die and the number of series-connected die, with maximum withstand voltages reaching hundreds of kilovolts. If a high-frequency rectifier circuit is used at very high frequencies, when the period of the alternating voltage is comparable to the recovery time of the rectifier from the on-state to the off-state, the rectifier no longer performs rectification on the high-frequency voltage. To meet the requirements of high-frequency operation, gold doping is usually employed in silicon rectifiers to shorten the lifetime of injected minority carriers, thereby reducing the recovery time. To reduce the possibility of damage due to overvoltage breakdown and improve the reliability of the rectification device, silicon avalanche rectifiers can be used. In such devices, when the reverse voltage exceeds the allowable peak value, uniform avalanche breakdown occurs across the entire PN junction. The device can operate under high voltage and high current conditions, thus withstanding considerable reverse surge power. Manufacturing such devices requires materials with few defects, uniform resistivity, and flat junction surfaces. The exposed junction areas should also be properly protected to prevent surface breakdown. Selenium rectifiers have high overload capacity and strong ability to withstand reverse surge power. In the two basic types of rectifiers based on high-power diodes or thyristors, the high-voltage alternating current power from the grid is converted into direct current power by the rectifier.

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