berner electrical components Germany berner model berner price

berner electrical components are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. The charge flow in transistors is mainly due to the diffusion and drift movement of carriers at the PN junction. The operation of this transistor involves the flow of both electrons and holes, so it is called bipolar, also known as a bipolar junction transistor. This mode of operation differs from unipolar transistors such as field-effect transistors, whose operation involves only the drift of a single type of carrier. The boundary between the two regions with different dopants is formed by the PN junction. Bipolar transistors can amplify signals and have good power control, high-speed operation, and durability, so they are often used to form amplifier circuits or drive devices such as speakers and motors, and are widely used in aerospace engineering, medical devices, robotics, and other applications.

berner electrical component principle

It is a contactless switching device with relay characteristics that uses semiconductor devices instead of traditional electrical contacts as the switching mechanism. A single-phase solid-state relay is a four-terminal active device, with two input control terminals and two output terminals. The input and output are optically isolated. When a DC or pulse signal is applied to the input terminal reaching a certain current value, the output terminal switches from the off state to the on state. AC solid-state relays are classified by switching method into zero-crossing conduction type and random conduction type; by output switching element into triac output type and anti-parallel SCR type; and by installation method into pin-type for PCB mounting and chassis-mounted type fixed on a metal baseplate. Solid-state relays can be divided into zero-voltage type and phase-control type based on the triggering method.

berner electrical component parameters

1. Stable voltage refers to the stable voltage value generated across the zener diode when it passes the rated current. This value varies slightly with operating current and temperature. Due to differences in manufacturing processes, the stabilization voltage of zener diodes of the same model is not completely consistent. 2. Reverse leakage current refers to the current passing through the zener diode when it generates a stable voltage. Below this value, the zener diode can still regulate voltage, but the regulation effect will be poorer; above this value, as long as the rated power dissipation is not exceeded, it is acceptable, and the voltage regulation performance will be better, but it will consume more electrical energy. 3. Dynamic resistance refers to the ratio of the change in voltage across the zener diode to the change in current. This ratio changes with the operating current; generally, the larger the operating current, the smaller the dynamic resistance. 4. Rated power dissipation is determined by the allowable temperature rise of the chip, and its value is the product of the stable voltage and the maximum allowable current. 5. The temperature coefficient means that if the temperature of the zener diode changes, its stable voltage will also undergo a slight change. The relative change in voltage across the tube caused by a temperature change of 1℃ is the temperature coefficient (unit: %/℃). Generally speaking, a stabilization voltage below 6V belongs to Zener breakdown, and the temperature coefficient is negative; the temperature coefficient is positive. When the temperature rises, the depletion layer decreases. In the depletion layer, the valence electrons of atoms rise to higher energy levels, and a smaller electric field strength can excite valence electrons from atoms to produce Zener breakdown, so its temperature coefficient is negative. Avalanche breakdown occurs when the depletion layer is wider and the electric field strength is lower. An increase in temperature increases the vibration amplitude of lattice atoms, hindering the movement of carriers. In this case, only by increasing the reverse voltage can avalanche breakdown occur, so the voltage temperature coefficient of avalanche breakdown is positive. For occasions with high requirements for power supply, two zener diodes with opposite temperature coefficients can be connected in series for compensation. Due to mutual compensation, the temperature coefficient is greatly reduced. 11. Reverse leakage current refers to the leakage current generated by the zener diode under the specified reverse voltage.

berner electrical component applications

Photoelectric sensors using photoelectric elements as sensitive components are diverse and widely used. According to the nature of the output quantity of photoelectric sensors, they can be divided into two categories: (1) Photoelectric measuring instruments that convert the measured quantity into a continuously changing photocurrent, which can be used to measure physical quantities such as light intensity, object temperature, light transmission capability, displacement, and surface status. For example: illuminance meters for measuring light intensity, photoelectric pyrometers, photoelectric colorimeters and turbidimeters, photoelectric alarms for fire prevention, and automatic detection devices and instruments for checking the diameter, length, ellipticity, and surface roughness of processed parts, all of which use photoelectric elements as sensitive components. Semiconductor photoelectric elements are not only widely used in the civil industrial field but also hold an important position in military applications. For example, lead sulfide photoresistors can be used to make infrared night vision devices, infrared cameras, and infrared navigation systems; (2) Converting the measured quantity into a continuously changing photocurrent. Various photoelectric automatic devices are made using the characteristic of photoelectric elements to output "yes" or "no" electrical signals when exposed to light or no light. Photoelectric elements are used as switch-type photoelectric conversion elements. For example, photoelectric input devices for electronic computers, switch-type temperature regulation devices, and digital photoelectric tachometers for speed measurement.

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