Eckerle Industrie electrical components, Germany Eckerle Industrie models, Eckerle Industrie prices

Eckerle Industrie electrical components are energy conversion devices that convert DC electrical energy into AC electrical energy with a specific frequency; the circuit they form is called an oscillating circuit. Simply put, an oscillator is a frequency source, generally used in phase-locked loops. In detail, it is a device that can convert DC electrical energy into AC electrical energy on its own without external signal excitation. It is generally divided into two types: positive feedback and negative resistance. The term "oscillation" implicitly refers to AC; an oscillator includes the process and function of transitioning from non-oscillating to oscillating. Such a device capable of converting DC electrical energy into AC electrical energy can be called an "oscillator." Oscillators can mainly be divided into two types: harmonic oscillators and relaxation oscillators. They are electronic components used to generate repetitive electronic signals (usually sine waves or square waves). The circuit they form is called an oscillating circuit. It is an electronic circuit or device that can convert DC electricity into AC electrical signal output with a specific frequency. There are many types; classified by oscillation excitation method, they include self-excited oscillators and externally excited oscillators; classified by circuit structure, they include RC oscillators, LC oscillators, crystal oscillators, tuning fork oscillators, etc.; classified by output waveform, they include sine wave, square wave, and sawtooth wave oscillators. They are widely used in the electronics industry, medical care, scientific research, and other aspects.

Eckerle Industrie electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metal materials such as aluminum, gold, molybdenum, nickel, and titanium can be selected, and the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N-type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage, while not making the series resistance too large, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is known, there are a large number of conductive electrons inside metal conductors. When metal contacts semiconductor (the distance between them is only on the order of atomic size), the Fermi level of the metal is lower than the Fermi level of the semiconductor. At the sub-levels corresponding to the conduction band of the semiconductor inside the metal, the electron density is lower than the electron density in the conduction band of the semiconductor. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor to become positively charged. Since metal is an ideal conductor, negative charge is distributed only within a thin layer on the surface with atomic-scale thickness. For N-type semiconductors, donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a potential barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region to the metal. As thermionic emission increases the built-in field, the drift current, which is opposite to the diffusion current direction, increases, finally reaching dynamic equilibrium and forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (i.e., positive voltage to the metal, negative voltage to the semiconductor), the built-in field is weakened, the potential barrier on the semiconductor side is lowered, thus forming a forward current from the metal to the semiconductor. When reverse bias is applied, the built-in field is enhanced, the potential barrier height increases, forming a smaller reverse current from the semiconductor to the metal. Therefore, like SBD and PN junction diodes, it is a nonlinear device with unidirectional conductivity.

Eckerle Industrie electrical component parameters

Rated voltage: refers to the safe voltage allowed when the switch is operating normally. If the voltage applied across the switch terminals exceeds this value, it will cause arcing and breakdown between the two contacts. Rated current: refers to the maximum safe current allowed to pass when the switch is closed; if this value is exceeded, the switch contacts will burn out due to excessive current. Insulation resistance: refers to the resistance value between the conductive part and the insulating part of the switch. Contact resistance: refers to the resistance value between each pair of contacts when the switch is in the closed state. Withstand voltage: refers to the highest voltage the switch can withstand between the conductor and ground. Life: refers to the number of operations the switch can perform under normal working conditions.

Eckerle Industrie electrical component principles

A resistor consists of three parts: the resistive element, the backbone, and the leads (for solid-core resistors, the resistive element and backbone are combined into one), and only the resistive element determines the resistance value. The volt-ampere characteristic is represented by a graphical curve showing the relationship between voltage and current at the resistor terminals; when voltage and current are proportional (the characteristic is a straight line), it is called a linear resistor; otherwise, it is called a nonlinear resistor. The maximum power dissipation allowed for continuous operation of the resistor at the rated temperature (maximum ambient temperature) tR. For each type of resistor, a maximum working voltage is also specified; that is, even if the rated power is not reached when the resistance is high, the maximum working voltage must not be exceeded. The rated power of a resistor refers to the maximum power allowed to be consumed during long-term continuous operation in DC or AC circuits. Load characteristics: When the working environment temperature is below tR, the resistor must not exceed its rated power; when it exceeds tR, the load power must be reduced. Each type of resistor has specified load characteristics. In addition, the allowable load is correspondingly reduced under low pressure. Under pulse load, the average pulse power is much lower than the rated power, and there are generally separate specifications.

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