EPLAX electrical components Germany EPLAX model EPLAX price

EPLAX electrical component is a high-power electrical component, also known as a thyristor. It has the advantages of small size, high efficiency, and long service life. In automatic control systems, it can serve as a high-power drive device, enabling low-power control elements to control high-power equipment. It is widely used in AC/DC motor speed control systems, power regulation systems, and servo systems. Thyristors are divided into unidirectional thyristors and bidirectional thyristors. Bidirectional thyristors are also called triac bidirectional thyristors, abbreviated as TRIAC. A bidirectional thyristor is structurally equivalent to two unidirectional thyristors connected in reverse; this type of thyristor has bidirectional conduction capability. Its on/off state is determined by the gate G. Applying a positive pulse (or negative pulse) to the gate G enables forward (or reverse) conduction. The advantages of this device are simple control circuitry and no reverse voltage withstand issues, making it particularly suitable for use as an AC contactless switch.

EPLAX electrical component parameters

The main parameters of a transistor include current amplification factor, dissipated power, frequency characteristics, maximum collector current, maximum reverse voltage, and reverse current. Amplification factor: The DC current amplification factor, also known as the static current amplification factor or DC amplification ratio, refers to the ratio of the transistor's collector current to the base current when there is no changing signal input under static conditions. AC amplification factor: The AC amplification factor, also known as the AC current amplification factor or dynamic current amplification factor, refers to the ratio of the change in the transistor's collector current to the change in base current under AC conditions. Dissipated power: Dissipated power, also known as the maximum allowable collector dissipated power PCM, refers to the maximum collector dissipated power when the transistor parameters do not exceed the specified allowable values. Dissipated power is closely related to the transistor's maximum allowable junction temperature and maximum collector current. During operation, the actual power consumption of the transistor must not exceed the PCM value; otherwise, the transistor will be damaged due to overload. When the transistor's operating frequency exceeds the cutoff frequency, its current amplification factor decreases as the frequency increases. The maximum oscillation frequency refers to the frequency at which the transistor's power gain drops to 1. Typically, the maximum oscillation frequency of a high-frequency transistor is lower than the common-base cutoff frequency, while the characteristic frequency is higher than the common-base cutoff frequency and lower than the common-collector cutoff frequency. Maximum current: The maximum collector current refers to the maximum current allowed to pass through the transistor's collector. Maximum reverse voltage: The maximum reverse voltage refers to the highest operating voltage allowed to be applied to the transistor during operation. It includes the collector-emitter reverse breakdown voltage, collector-base reverse breakdown voltage, and emitter-base reverse breakdown voltage. Collector reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and emitter when the transistor base is open. Base reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and base when the transistor emitter is open. Emitter reverse breakdown voltage refers to the maximum allowable reverse voltage between the emitter and base when the transistor collector is open. The reverse current between the base and collector, also known as the collector junction reverse leakage current, refers to the reverse current between the collector and base when the transistor emitter is open. The reverse breakdown current between the emitter and collector refers to the reverse leakage current between the collector and emitter when the transistor base is open, also known as the penetration current. The smaller this current value, the better the performance of the transistor.

EPLAX electrical component characteristics

The main parameters characterizing resistor properties include nominal resistance and its tolerance, rated power, load characteristics, and temperature coefficient of resistance. Load characteristics: When the ambient operating temperature is below tR, the resistor must not be used beyond its rated power; when exceeding tR, the load power must be derated. Each type of resistor has specified load characteristics. Additionally, the allowable load may be correspondingly reduced under low atmospheric pressure. Under pulse load conditions, the average pulse power is far lower than the rated power, and separate specifications usually apply. Within the specified ambient temperature range, the average relative change in resistance per 4 °C change in temperature is expressed in ppm/°C. In addition to the above parameters, other technical indicators include nonlinearity (the degree to which the current-voltage characteristic deviates from a linear relationship), voltage coefficient (the relative rate of change in resistance per volt change in applied voltage), current noise (the ratio of the RMS value of the noise potential generated by current flow within the resistor body to the test voltage, expressed by the current noise index), high-frequency characteristics (the curve showing the decrease in resistance with increasing operating frequency due to the influence of distributed capacitance and inductance within the resistor body), and long-term stability (the process of irreversible change in resistance value due to environmental conditions during long-term use or storage).

EPLAX electrical component classification

a. By material: silicon transistors, germanium transistors. b. By structure: NPN, PNP. c. By function: switching transistors, power transistors, Darlington transistors, photosensitive transistors, etc. d. By power: low-power transistors, medium-power transistors, high-power transistors. e. By operating frequency: low-frequency transistors, high-frequency transistors, ultra-high-frequency transistors. f. By structural process: alloy transistors, planar transistors. g. By mounting method: through-hole transistors, surface-mount transistors.

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