GE electrical components, German GE models, GE prices

GE electrical components are current fuses that provide overload protection. When a circuit fault or abnormality occurs, the current continuously rises. This rising current may damage certain important devices in the circuit, burn out the circuit, or even cause a fire. If a fuse is correctly installed in the circuit, it will melt and cut off the current when the current abnormally rises to a certain level and temperature, thereby protecting the safe operation of the circuit. With the fuse correctly installed in the circuit, the fuse will melt and cut off the current when the current abnormally rises to a certain level and temperature, protecting the safe operation of the circuit. The fuse invented by Edison was used to protect the then-expensive incandescent lamps. With the development of the times, fuses protect power equipment from damage due to overcurrent and overheating, avoiding serious damage to electronic equipment caused by internal faults.

GE electrical component principles

When the voltage applied to the varistor is below its threshold, the current flowing through it is extremely small, equivalent to a resistor with infinite resistance. That is, when the voltage applied to it is below its threshold, it acts as an open switch. When the voltage applied to the varistor exceeds its threshold, the current flowing through it surges, equivalent to a resistor with infinitesimal resistance. That is, when the voltage applied to it is above its threshold, it acts as a closed switch. Protection principle of surge absorbers: In the standby state, the varistor has very high impedance (several megaohms) relative to the protected electronic components and does not affect the characteristics of the original design circuit. However, when an instantaneous surge voltage appears (exceeding the breakdown voltage of the surge absorber), the impedance of the surge absorber drops low (only a few ohms), causing a short circuit in the line, thereby protecting electronic products or more expensive components.

GE electrical component principles

P-type semiconductors are formed by doping intrinsic semiconductors (a completely pure, structurally perfect semiconductor crystal) with a small amount of trivalent impurity elements, such as boron. Since boron atoms have only three valence electrons, they form covalent bonds with surrounding silicon atoms. Due to the lack of one electron, a vacancy is created in the crystal. When electrons on adjacent covalent bonds gain energy, they may fill this vacancy, turning the boron atom into an immobile negative ion, while the covalent bond of the original silicon atom forms a hole due to the lack of an electron, but the entire semiconductor remains neutral. In this P-type semiconductor, conduction is mainly by holes; holes are the majority carriers, and free electrons are the minority carriers. The principle of N-type semiconductor formation is similar to that of P-type. Pentavalent atoms, such as phosphorus, are doped into the intrinsic semiconductor. After doping, they form covalent bonds with silicon atoms, generating free electrons. In N-type semiconductors, electrons are the majority carriers, and holes are the minority carriers. Therefore, doping trivalent and pentavalent impurity elements into two different regions of an intrinsic semiconductor forms P-type and N-type regions. Based on the characteristics of N-type and P-type semiconductors, a concentration difference of electrons and holes appears at their junction. Electrons and holes diffuse from the high-concentration region to the low-concentration region, disrupting the electrical neutrality at the original junction. Unidirectional conductivity of the PN junction: When a forward voltage V is applied externally to the PN junction, the equilibrium state of the PN junction is broken under the influence of this external electric field. Holes in the P region and electrons in the N region move toward the PN junction. Holes neutralize negative ions in the P region of the PN junction, and electrons neutralize positive ions in the N region of the PN junction, thus narrowing the PN junction. As the external electric field increases, diffusion motion further intensifies, and drift motion weakens. When the external voltage exceeds the threshold voltage, the PN junction acts as a resistor with very small resistance, meaning the PN junction is conducting.

GE electrical component characteristics

The static characteristics of a sensor refer to the relationship between the output and input signals for static input signals, the mutual relationship between the sensor's output quantity and input quantity. Since at this time both the input and output quantities are independent of time, their relationship, i.e., the static characteristics of the sensor, can be described by an algebraic equation that does not contain time variables, or by a characteristic curve plotted with the input quantity as the abscissa and the corresponding output quantity as the ordinate. The main parameters characterizing the static characteristics of a sensor include: linearity, sensitivity, hysteresis, repeatability, drift, etc. (1) Linearity: Refers to the degree to which the actual relationship curve between the sensor's output and input quantities deviates from the fitted straight line. It is defined as the ratio of the maximum deviation between the actual characteristic curve and the fitted straight line over the full scale range to the full-scale output value. (2) Sensitivity: Sensitivity is an important indicator of the static characteristics of a sensor. It is defined as the ratio of the increment in the output quantity to the corresponding increment in the input quantity that causes this increment. Sensitivity is denoted by S. (3) Hysteresis: Hysteresis is the phenomenon where the input-output characteristic curves do not coincide when the input quantity changes from small to large (forward stroke) and from large to small (reverse stroke). For the same magnitude of input signal, the output signal magnitudes of the sensor during the forward and reverse strokes are not equal; this difference is called the hysteresis difference. (4) Repeatability: Repeatability refers to the degree of inconsistency in the characteristic curves obtained when the sensor's input quantity undergoes continuous multiple full-scale changes in the same direction. (5) Drift: Sensor drift refers to the situation where, with the input quantity remaining constant, the sensor's output quantity changes over time; this phenomenon is called drift. There are two causes of drift: one is the sensor's own structural parameters; the other is the surrounding environment (such as temperature, humidity, etc.). (6) Resolution: When the sensor input slowly increases from a non-zero value, the output undergoes an observable change after exceeding a certain increment, this input increment is called the sensor resolution, i.e., the minimum input increment. (7) Threshold: When the sensor input slowly increases from zero, the output undergoes an observable change after reaching a certain value, this input value is called the sensor threshold voltage.

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