kreiling tech electrical components, German kreiling tech models, kreiling tech prices

kreiling tech electrical components are electrical control devices. When the change in the input quantity (excitation) meets specified requirements, they cause a predetermined step change in the controlled quantity within the electrical output circuit. They facilitate interaction between the control system (also known as the input circuit) and the controlled system (also known as the output circuit). Typically applied in automated control circuits, they function as "automatic switches" that use small currents to control large currents. Therefore, they perform roles such as automatic regulation, safety protection, and circuit switching in electrical circuits. A relay is an electrical control device that, upon receiving a specified input quantity maintained for a sufficient duration, causes a predetermined step change in the controlled quantity within the electrical output circuit. When the input quantity drops to a certain level and remains there for a sufficient duration, it returns to its initial state.

kreiling tech electrical component composition

A diode is formed by a PN junction along with corresponding electrode leads and package casing. Using different doping processes and diffusion, P type semiconductor and N type semiconductor are fabricated on the same semiconductor substrate (usually silicon or germanium), forming a space charge region at their interface known as the PN junction. The electrode drawn from the P region is called the anode, and the electrode drawn from the N region is called the cathode. Due to the unidirectional conductivity of the PN junction, current flows from the anode through the interior of the tube to the cathode when the diode is conducting. A diode has two electrodes: the electrode drawn from the P region is the positive terminal, also called the anode; the electrode drawn from the N region is the negative terminal, also called the cathode.

kreiling tech electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small at low voltage values. When the voltage exceeds a certain value, the current begins to increase exponentially. This is typically referred to as the diode's turn-on voltage, at which point the diode is in a fully conducting state; this voltage is commonly called the diode's conduction voltage. For germanium diodes, when a reverse voltage is applied, the current is extremely small at low voltage values, representing the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, a phenomenon known as reverse breakdown, and this voltage is called the diode's reverse breakdown voltage. Breakdown voltages vary significantly among different diode models, ranging from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristic curve, the forward voltage is too small to overcome the blocking effect of the electric field within the PN junction, resulting in nearly zero forward current. This region is called the dead zone. The forward voltage that fails to conduct the diode is called the dead zone voltage. When the forward voltage exceeds the dead zone voltage, the electric field within the PN junction is overcome, and the diode conducts forward, with current rising rapidly as voltage increases. Within the normal operating current range, the terminal voltage of the conducting diode remains almost constant; this voltage is called the diode's forward voltage. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, and the characteristic current grows rapidly, causing the diode to conduct forward. This is called the threshold voltage or cut-in voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current flowing through the diode is a reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in a cutoff state. This reverse current is also known as reverse saturation current or leakage current, and it is highly influenced by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, while that of low-power germanium tubes is in the order of μA. As temperature rises, semiconductors are thermally excited, increasing the number of minority carriers and consequently increasing the reverse saturation current. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode's reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, its unidirectional conductivity may not be permanently damaged, and its performance can recover after the external voltage is removed; otherwise, the diode will be damaged. Therefore, excessive reverse voltage should be avoided during use. Reverse breakdown is categorized into Zener breakdown and avalanche breakdown based on mechanism. In cases of high doping concentration, the barrier region width is very small. At higher reverse voltages, the covalent bond structure within the barrier region is disrupted, freeing valence electrons from covalent bonds and generating electron-hole pairs, which causes a sharp increase in current. This is called Zener breakdown. If the doping concentration is lower, the barrier region is wider, making Zener breakdown less likely. Another type is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates electron drift speed, causing collisions with valence electrons in covalent bonds. This knocks valence electrons out of covalent bonds, generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and collide with other valence electrons, leading to an avalanche-like increase in carriers and a sharp rise in current. This is called avalanche breakdown. Regardless of the breakdown type, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode under ambient temperature and maximum reverse voltage conditions. The smaller the reverse current, the better the unidirectional conductivity of the device. It is worth noting that reverse current is closely related to temperature; it doubles with temperature increase. Therefore, silicon diodes exhibit better stability at high temperatures compared to germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point on the diode's characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper frequency limit for diode operation. Like the PN junction, the diode's junction capacitance consists of barrier capacitance. Therefore, the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, unidirectional conductivity will be affected. (9) Maximum rectified current: Maximum rectified current refers to the maximum allowable average forward current when the diode operates continuously over a long period. Its value depends on the PN junction area and external heat dissipation conditions. Current flow causes heating in the die, raising its temperature. If the temperature exceeds the permissible limit, the die will overheat and fail. Therefore, under specified heat dissipation conditions, the diode must not exceed its maximum rectified current rating during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the device breaks down and loses its unidirectional conductivity. To ensure safe operation, a maximum reverse working voltage value is specified.

kreiling tech electrical component structure

Inductors generally consist of a bobbin, winding, shield, encapsulation material, magnetic core, or iron core. 1, Bobbin: The bobbin refers to the support for winding the coil. Most large-volume fixed inductors or adjustable inductors (such as oscillator coils, choke coils, etc.) involve winding enameled wire (or silk-covered wire) around the bobbin and then inserting a magnetic core, copper core, or iron core into the bobbin's interior to increase inductance. Bobbins are typically made of plastic, bakelite, or ceramic and can be shaped according to specific needs. Small inductors (such as color-coded inductors) generally do not use bobbins but instead wind enameled wire directly onto the magnetic core. Air-core inductors (also known as formless coils or air coils, mostly used in high-frequency circuits) do not use magnetic cores, bobbins, or shields. Instead, they are wound on a mold which is then removed, leaving a certain distance between the coil turns. 2, Winding: The winding refers to a set of coils with specified functions and is the basic component of an inductor. Windings are classified into single-layer and multi-layer types. Single-layer windings include close-winding (where wires are wound circle by circle adjacent to each other) and spaced-winding (where a certain distance is maintained between each turn). Multi-layer windings include layered flat winding, random winding, honeycomb winding, and other methods. 3, Magnetic core and magnetic rod: Magnetic cores and rods are generally made of materials such as nickel-zinc ferrite or manganese-zinc ferrite. They come in various shapes such as "I" shape, cylindrical, cap shape, "E" shape, and pot shape. 4, Iron core: Iron core materials mainly include silicon steel sheets and permalloy, mostly shaped as "E" type. 5, Shield: To prevent the magnetic field generated by some inductors during operation from affecting other circuits and components, a metal shield is added (such as for oscillator coils in semiconductor radios). Using a shield increases coil loss and reduces the Q value. 6, Encapsulation material: Some inductors (such as color-coded inductors, color-ring inductors, etc.) are sealed with encapsulation material after winding to protect the coil and magnetic core. Encapsulation materials include plastic or epoxy resin.

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