xSEZ electrical components Germany xSEZ model xSEZ price

xSEZ electrical component is a sensor resistor whose resistance changes with temperature. According to different temperature coefficients, it is divided into positive temperature coefficient thermistors and negative temperature coefficient thermistors. The resistance of a positive temperature coefficient thermistor increases as the temperature rises, while the resistance of a negative temperature coefficient thermistor decreases as the temperature rises; both belong to semiconductor devices.

xSEZ electrical component performance

The main performance indicators of speakers include: sensitivity, frequency response, rated power, rated impedance, directivity, and distortion. (1) Rated power: Speaker power is divided into nominal power and maximum power. Nominal power is also called rated power or non-distortion power. It refers to the maximum input power allowed within the rated non-distortion range of the speaker; the power marked on the speaker's label and technical manual is this value. Maximum power refers to the peak power that the speaker can withstand at a certain instant. (2) Rated impedance: The impedance of a speaker is generally related to frequency. (3) Frequency response: When audio signals of the same voltage but different frequencies are applied to a speaker, the resulting sound pressure will change. Generally, the sound pressure is higher in the mid-frequency range, and lower in the low and high-frequency ranges. The frequency range of high and low tones when the sound pressure drops to a certain value of the mid-frequency is called the frequency response characteristic of the speaker. (4) Distortion: The phenomenon where a speaker cannot faithfully reproduce the original sound is called distortion. There are two types of distortion: frequency distortion and nonlinear distortion. Frequency distortion is caused by stronger amplification of signals at some frequencies and weaker amplification at others, which disrupts the original proportion of loudness between high and low tones and changes the original timbre. Nonlinear distortion is caused by the inconsistency between the vibration of the speaker's vibration system and the signal fluctuation, adding new frequency components to the output sound waves. (5) Directivity characteristic: Used to characterize the distribution of sound pressure radiated by the speaker in all directions in space. The higher the frequency, the narrower the directivity; the larger the paper cone, the stronger the directivity.

xSEZ electrical component characteristics

Sensitivity refers to the ratio of the change in output to the change in input of a sensor under steady-state operating conditions. It is the slope of the output-input characteristic curve. If there is a linear relationship between the output and input of the sensor, then the sensitivity S is a constant. Otherwise, it will vary with the change in input. The dimension of sensitivity is the ratio of the dimensions of the output and input quantities. When the dimensions of the output and input quantities of the sensor are the same, sensitivity can be understood as the amplification factor. Increasing sensitivity can achieve higher measurement accuracy. However, the higher the sensitivity, the narrower the measurement range, and the stability is often poorer.

xSEZ electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by the contact between metal and semiconductor. Metals such as aluminum, gold, molybdenum, nickel, and titanium can be used, and the semiconductor is usually silicon or gallium arsenide. Since electrons have higher mobility than holes, to obtain good frequency characteristics, N type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without making the series resistance too large, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is known, there are a large number of conductive electrons inside a metal conductor. When metal contacts a semiconductor (the distance between them is only on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the sub-energy levels corresponding to the conduction band of the semiconductor inside the metal, the electron density is less than that in the conduction band of the semiconductor. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, the negative charge is distributed only within a thin layer on the surface with atomic thickness. For N type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a barrier, with the depletion layer existing only on the N type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region is from the N type region to the metal. As thermionic emission increases the built-in field, the drift current opposite to the diffusion current increases, finally reaching dynamic equilibrium and forming a contact barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (i.e., positive voltage to the metal and negative voltage to the semiconductor), the built-in field is weakened, the barrier on the semiconductor side is lowered, thus forming a forward current from the metal to the semiconductor. When reverse bias is applied, the built-in field is strengthened, the barrier height increases, forming a small reverse current from the semiconductor to the metal. Therefore, SBD, like PN junction diodes, is a nonlinear device with unidirectional conductivity.

Weidou Intelligent Technology specializes in selling German xSEZ connectors, xSEZ switches, xSEZ relays, xSEZ controllers, xSEZ plugs, xSEZ sensors, xSEZ resistors, xSEZ capacitors, xSEZ buses, xSEZ modules, xSEZ cables, xSEZ power supplies, xSEZ interfaces, xSEZ gateways, xSEZ circuit breakers, xSEZ original imports from Germany. Welcome customers to inquire and order.