TETM20-26C in stock. German TETM20-26C electrical components. TETM20-26C inventory.

TETM20-26C electrical components are products whose raw material molecular composition remains unchanged during factory processing, and can be referred to as components. Components belong to devices that do not require an energy source. They include: resistors, capacitors, and inductors. Circuit-type components include diodes and resistors; connection-type components include connectors, sockets, connecting cables, and printed circuit boards (PCB). Devices are products whose raw material molecular structure is altered during factory production and processing, and are referred to as devices. Devices are divided into active devices and discrete devices. The main characteristic of active devices is that they consume small amounts of electrical energy and require an external power supply. Discrete devices are divided into bipolar junction transistors, field-effect transistors, thyristors, semiconductor resistors, and capacitors. shi

TETM20-26C electrical component principles

An NPN type bipolar transistor can be viewed as two diodes joined together with a common anode. During normal operation of a bipolar transistor, the base-emitter junction is forward-biased, while the base-collector junction is reverse-biased. In the absence of an external voltage, the electron concentration in the N region of the emitter junction is greater than that in the P region, causing some electrons to diffuse into the P region. Similarly, some holes from the P region will also diffuse into the N region. Consequently, a space charge region forms at the emitter junction, generating an internal electric field directed from the N region toward the P region. This field hinders further diffusion, achieving dynamic equilibrium. At this point, if a forward voltage is applied to the emitter junction, the dynamic balance between carrier diffusion and the internal electric field in the depletion layer is broken, causing thermally excited electrons to inject into the base region. In an NPN type transistor, the base region is P type doped, where holes are the majority carriers; therefore, electrons in this region are referred to as "minority carriers." Electrons injected from the emitter into the base region partly recombine with the majority carrier holes there. On the other hand, due to the low doping level and thin physical dimensions of the base region, and because the collector junction is reverse-biased, most electrons reach the collector region via drift motion, forming the collector current. To minimize recombination before electrons reach the collector junction, the base region of the transistor must be made sufficiently thin so that the time required for carrier diffusion is shorter than the lifetime of semiconductor minority carriers. Meanwhile, the base thickness must be much smaller than the electron diffusion length. In modern bipolar transistors, the typical base region thickness is a few tenths of a micrometer. It should be noted that although both the collector and emitter are N type doped, their doping levels and physical properties differ. Therefore, a bipolar transistor must be distinguished from a configuration of two diodes connected in series in opposite directions.

TETM20-26C electrical component principles

The main principle of a diode is the unidirectional conductivity of the PN junction. Adding leads and encapsulation to the PN junction forms a diode. A crystal diode consists of a PN junction formed by P type semiconductor and N type semiconductor. A space charge layer forms on both sides of the interface, establishing a built-in electric field. When no external voltage is present, the diffusion current caused by the carrier concentration difference across the PN junction equals the drift current caused by the built-in electric field, resulting in electrical equilibrium. When a forward bias voltage is applied externally, the mutual cancellation of the external and built-in electric fields increases the carrier diffusion current, resulting in a forward current. When a reverse bias voltage is applied externally, the external and built-in electric fields reinforce each other, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the PN junction space charge layer reaches a critical value, triggering a carrier multiplication process. This generates a large number of electron-hole pairs, resulting in a significant reverse breakdown current, known as the diode breakdown phenomenon. Reverse breakdown of the PN junction is categorized into Zener breakdown and avalanche breakdown.

TETM20-26C electrical component principles

The main principle of a diode is the unidirectional conductivity of the PN junction. Adding leads and encapsulation to the PN junction forms a diode. A crystal diode consists of a PN junction formed by P type semiconductor and N type semiconductor. A space charge layer forms on both sides of the interface, establishing a built-in electric field. When no external voltage is present, the diffusion current caused by the carrier concentration difference across the PN junction equals the drift current caused by the built-in electric field, resulting in electrical equilibrium. When a forward bias voltage is applied externally, the mutual cancellation of the external and built-in electric fields increases the carrier diffusion current, resulting in a forward current. When a reverse bias voltage is applied externally, the external and built-in electric fields reinforce each other, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the PN junction space charge layer reaches a critical value, triggering a carrier multiplication process. This generates a large number of electron-hole pairs, resulting in a significant reverse breakdown current, known as the diode breakdown phenomenon. Reverse breakdown of the PN junction is categorized into Zener breakdown and avalanche breakdown.

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