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Elektro Komponenten electrical components are parts of electronic components and small electrical machines and instruments; they themselves often consist of several parts and can be used interchangeably in similar products; they often refer to certain parts in the electrical, radio, and instrumentation industries. In fact, electronic components are the general term for components and devices.

Elektro Komponenten electrical component principles

Bipolar junction transistors are divided into two types by material: germanium transistors and silicon transistors. Each type has two structural forms: NPN and PNP, but the most commonly used are silicon NPN and germanium PNP transistors. (Here, N means negative pole; N-type semiconductor is formed by adding phosphorus to high-purity silicon to replace some silicon atoms, generating free electrons for conduction under voltage stimulation. P means positive pole, formed by adding boron to replace silicon, creating a large number of holes to facilitate conduction.) Apart from the different power supply polarities, their working principles are the same. The following introduces only the current amplification principle of NPN silicon transistors. An NPN transistor consists of 12 pieces of N-type semiconductor with a piece of P-type semiconductor sandwiched in between. The PN junction formed between the emitter region and the base region is called the emitter junction, and the PN junction formed between the collector region and the base region is called the collector junction. The three leads are called the emitter e, base b, and collector c. When the potential at point b is a few tenths of a volt higher than the potential at point e, the emitter junction is in forward bias. When the potential at point C is a few volts higher than the potential at point b, the collector junction is in reverse bias, and the collector power supply Ec must be higher than the base power supply Eb. During transistor manufacturing, the majority carrier concentration in the emitter region is intentionally made higher than that in the base region. At the same time, the base region is made very thin, and impurity content is strictly controlled. Thus, once the power is connected, due to the forward bias of the emitter junction, the majority carriers in the emitter region (electrons) and the majority carriers in the base region (holes) easily diffuse across the emitter junction toward each other. However, since the former concentration is much greater than the latter, the current through the emitter junction is basically an electron flow, known as the emitter electron flow.

Elektro Komponenten electrical component principles

When current flows through a conductor, the conductor heats up because it has a certain resistance. The heat generation follows this formula: Q=I2RT; where Q is the heat generated, 0.27 is a constant, I is the current flowing through the conductor, R is the resistance of the conductor, and T is the time the current flows through the conductor. From this formula, we can easily understand the simple working principle of a fuse. When the material and shape of the fuse are determined, its resistance R is relatively fixed (ignoring its temperature coefficient of resistance). When current flows through it, it generates heat, and the heat increases with time. The magnitude of current and resistance determines the rate of heat generation. The construction of the fuse and its installation conditions determine the rate of heat dissipation. If the rate of heat generation is less than the rate of heat dissipation, the fuse will not blow. If the rate of heat generation equals the rate of heat dissipation, it will not blow for a considerable period. If the rate of heat generation exceeds the rate of heat dissipation, more and more heat will accumulate. Due to its specific heat capacity and mass, the increase in heat manifests as a rise in temperature. When the temperature rises above the melting point of the fuse, the fuse blows. This is the working principle of a fuse. From this principle, you should know that when designing and manufacturing fuses, you must carefully study the physical properties of your selected materials and ensure they have consistent geometric dimensions. These factors play a crucial role in whether the fuse can work properly. Similarly, when using it, you must install it correctly.

Elektro Komponenten electrical component principles

An NPN-type bipolar transistor can be viewed as two diodes joined together with a common anode. In the normal operating state of a bipolar transistor, the base-emitter junction is forward-biased, while the base-collector junction is reverse-biased. Without external voltage, the electron concentration in the N region of the emitter junction is greater than that in the P region, so some electrons will diffuse into the P region. Similarly, some holes in the P region will diffuse into the N region. Thus, a space charge region forms on the emitter junction, generating an internal electric field directed from the N region to the P region. This field hinders further diffusion, achieving dynamic equilibrium. At this point, if a forward voltage is applied to the emitter junction, the dynamic balance between the carrier diffusion movement and the internal electric field in the depletion layer will be broken, causing thermally excited electrons to inject into the base region. In an NPN-type transistor, the base region is P-type doped, where holes are the majority dopants, so electrons in this region are called "minority carriers." Electrons injected from the emitter into the base region partly recombine with the majority carrier holes there. On the other hand, due to the low doping level and thin physical dimension of the base region, and because the collector junction is reverse-biased, most electrons reach the collector region via drift motion, forming the collector current. To minimize recombination before electrons reach the collector junction, the base region of the transistor must be made thin enough so that the carrier diffusion time is shorter than the lifetime of minority carriers in the semiconductor. Meanwhile, the base thickness must be much smaller than the electron diffusion length. In modern bipolar transistors, the typical base region thickness is a few tenths of a micron. Note that although both the collector and emitter are N-type doped, their doping levels and physical properties are not identical. Therefore, a bipolar transistor must be distinguished from two diodes connected in series in opposite directions.

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