B Plus electrical components Germany B Plus model B Plus price

B Plus electrical components utilize the good conductivity and fluidity of mercury to control the opening and closing of electrical circuits. They consist of a glass tube, mercury, fixed electrodes, lead wires, etc. After evacuating the air from the tube, it is filled with various gases and sealed. They are suitable for environments with dust, oil, water vapor, and corrosive gases, and can also be used as explosion-proof switches in locations with explosive gases. Given the high surface tension and specific gravity of the mercury inside the tube, along with its fluidity, the position of the mercury changes immediately with even a slight tilt of the glass tube, and makes contact with the electrodes via surface contact, thus enabling the switching of high AC and DC currents. Additionally, this type of switch features a service life of several million operations at rated current, compact size, high sensitivity, no mechanical noise, and low cost, making it widely used as a switch for automatic control.

B Plus electrical component principle

A Schottky diode is a metal-semiconductor device made by using a noble metal (gold, silver, aluminum, platinum, etc.) A as the anode and an N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at their contact interface. Because the N-type semiconductor contains a large number of electrons while the noble metal has only a very small number of free electrons, electrons diffuse from the high-concentration B to the low-concentration A. Clearly, there are no holes in the metal A, so there is no diffusion of holes from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, disrupting surface electrical neutrality and forming a barrier whose electric field direction is B → A. However, under the influence of this electric field, electrons in A also undergo drift motion from A → B, thereby weakening the electric field formed by the diffusion motion. When a space charge region of a certain width is established, the electron drift motion caused by the electric field and the electron diffusion motion caused by the concentration difference reach a relative equilibrium, forming the Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses an N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region, increasing the voltage withstand value of the diode. The N-type substrate has a very small on-state resistance, and its doping concentration is 107% times higher than that of the H-layer. An N+ cathode layer is formed beneath the substrate to reduce the cathode contact resistance. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

B Plus electrical component parameters

1. Voltage temperature coefficient: Refers to the rate of change of the nominal voltage of a varistor within a specified temperature range, i.e., the relative change in voltage across the varistor when the temperature changes while the current through the varistor remains constant. 2. Current temperature coefficient: Refers to the relative change in current flowing through the varistor when the temperature changes while the voltage across the varistor remains constant. 3. Nominal voltage: Refers to the voltage value across the varistor when a DC current passes through it. 4. Voltage ratio: Refers to the ratio of the voltage generated by the current in the varistor to the voltage generated by the current in the varistor. 5. Maximum limiting voltage: Refers to the highest voltage value that the varistor can withstand across its terminals. 6. Leakage current: Also known as standby current, it refers to the current flowing through the varistor at a specified temperature and maximum DC current. 7. Residual voltage ratio: When the current passing through the varistor is a certain value, the voltage generated across its terminals is called the residual voltage for that current value. The residual voltage ratio is the ratio of the residual voltage to the nominal voltage. 8. Surge current capacity: Also known as surge current, it refers to the maximum pulse (peak) current value allowed to pass through the varistor under specified conditions (specified time intervals and number of times, applying standard impulse current). 9. Static capacitance: Refers to the inherent capacitive capacity of the varistor itself. 10. Insulation resistance: Refers to the resistance value between the lead wires (pins) of the varistor and the insulated surface of the resistive body. 13. Voltage nonlinearity coefficient: Refers to the ratio of the static resistance value to the dynamic resistance value of the varistor under a given applied voltage.

B Plus electrical component features

Utilizing existing DIN-rail terminal block frame screw connection technology and adding circuits composed of electronic components, optoelectronic transmission coupling is achieved. The core of automatic control requires that the control unit be reliably isolated from various sensors and actuators to avoid interference. Sanmenwan WUKG5 opto-isolated terminals can effectively perform this function, ensuring that field signals match the low voltage required by electronic control devices. They can also serve as interface components between peripheral equipment for process control and control, signal, and regulator devices, and are suitable for different voltage and power ranges. Opto-isolated terminals offer advantages such as low signal loss at the control end, high switching frequency, no mechanical contact bounce, wear-free switching, high insulation voltage, resistance to vibration, independence from mounting position, and long service life, leading to their widespread application in the field of automatic control.

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