BTICINO electrical components Germany BTICINO model BTICINO price

BTICINO electrical components are linear devices based on metallic induction. The function of a sensor is to convert various measured physical quantities into electrical signals. In production processes, displacement measurement is generally divided into two types: measuring physical dimensions and measuring mechanical displacement. Depending on the form of transformation of the measured variable, displacement sensors can be classified into analog and digital types. Analog types can be further divided into property-based and structural types. Commonly used displacement sensors are mostly analog structural types, including potentiometric displacement sensors, inductive displacement sensors, synchros, capacitive displacement sensors, eddy current displacement sensors, and Hall effect displacement sensors. An important advantage of digital displacement sensors is that they facilitate direct input of signals into computer systems. Displacement is a quantity related to the movement of an object's position during motion, and the scope of displacement measurement methods is quite extensive. Small displacements are typically detected using strain gauge, inductive, differential transformer, eddy current, and Hall sensors. Large displacements are commonly measured using sensing technologies such as resolvers, optical gratings, capacitive gratings, and magnetic gratings. Among these, optical grating sensors are increasingly widely used in industries such as machine tool machining and testing instruments due to their advantages, including ease of digitization, high precision (with current highest resolution reaching the nanometer level), strong anti-interference capability, absence of human reading errors, convenient installation, and reliable operation.

BTICINO electrical component classification

Fuses can be classified into high-voltage fuses and low-voltage fuses based on operating voltage. Based on the protected object, they can be classified into fuses for protecting transformers and general electrical equipment, fuses for protecting voltage transformers, fuses for protecting power capacitors, fuses for protecting semiconductor components, fuses for protecting motors, and fuses for protecting household appliances. Based on structure, they can be classified into open, semi-enclosed, cartridge, and expulsion fuses. Open fuses have a simple structure, with the fuse element fully exposed to the air and supported by porcelain pillars without a base, making them suitable for low-voltage outdoor use. They produce significant noise and light in the atmosphere when interrupting current. Semi-enclosed fuses have their fuse element mounted on a porcelain frame, inserted into a porcelain box with metal sockets at both ends, making them suitable for low-voltage indoor use. The noise and light produced during current interruption are contained by the porcelain box. In cartridge fuses, the fuse element is installed inside the fuse body. It is then inserted into a base or directly connected into the circuit for use. The fuse link is a fully sealed insulating tube with metal caps or contact blades at both ends. If the insulating tube of this type of fuse is filled with quartz sand, it has a current-limiting effect when interrupting current, which can greatly increase the breaking capacity; hence, it is also known as a high-breaking-capacity fuse. If the tube is evacuated, it is called a vacuum fuse. If the tube is filled with SF6 gas, it is called an SF6 fuse, aimed at improving arc extinction performance. Since quartz sand, vacuum, and SF8 gas all possess good insulation properties, this type of fuse is suitable for both low-voltage and high-voltage applications. Expulsion fuses have the fuse element installed in an insulating tube made of solid gas-generating material. Solid gas-generating materials can include electrical pressboard or organic glass materials. When short-circuit current passes through the fuse element, the element melts immediately, generating an electric arc. The high-temperature arc causes the solid gas-generating material to rapidly decompose, producing a large amount of high-pressure gas, which ejects the ionized gas and arc from both ends of the tube, emitting intense noise and light, and extinguishing the arc when the AC current crosses zero, thereby interrupting the current. The insulating tube is usually mounted on an insulating support to form the complete fuse assembly. Sometimes the upper end of the insulating tube is designed to be movable, detaching and dropping down immediately after current interruption. This type of expulsion fuse is commonly known as a drop-out fuse.

BTICINO electrical component structure

A bipolar transistor consists of three differently doped semiconductor regions: the emitter region, the base region, and the collector region. In an NPN type transistor, these regions are N type, P type, and N type semiconductors, respectively, while in an PNP type transistor, they are P type, N type, and P type semiconductors, respectively. Each semiconductor region has a lead terminal, typically denoted by the letters E, B, and C to represent the emitter, base, and collector, respectively. The base is physically located between the emitter and the collector and is made of lightly doped, high-resistivity material. The collector surrounds the base region. Since the collector junction is reverse-biased, it is difficult for electrons to be injected from here into the base region, resulting in a common-base current gain of approximately 3, while the common-emitter current gain achieves a larger value. From the cross-sectional diagram of a typical NPN type bipolar transistor on the right, it can be seen that the area of the collector junction is larger than that of the emitter junction. Additionally, the emitter has a relatively high doping concentration. Under normal circumstances, the regions of a bipolar transistor are not symmetric in physical properties or geometric dimensions. Assuming the transistor connected in the circuit is in the forward active region, if the connections of the collector and emitter in the circuit are swapped, the transistor will leave the forward active region and enter the reverse active region. The internal structure of the transistor determines its suitability for operation in the forward active region, so the common-base and common-emitter current gains in the reverse active region are much smaller than when the transistor is in the forward active region. This functional asymmetry is fundamentally due to the different doping levels of the emitter and collector. Therefore, in an NPN type transistor, although both the collector and emitter are N type doped, their electrical properties and functions are completely non-interchangeable. The emitter region has the highest doping level, followed by the collector region, and the base region has the lowest doping level. Additionally, the physical dimensions of the three regions differ; the base region is very thin, and the collector area is larger than the emitter area. Due to this material structure of the bipolar transistor, a reverse bias can be provided to the collector junction, provided that this reverse bias is not excessive enough to damage the transistor. The purpose of heavy doping of the emitter is to increase the efficiency of electron injection from the emitter into the base region, thereby achieving the highest possible current gain. In the common-emitter configuration of a bipolar transistor, small changes in the voltage applied across the base and emitter terminals cause significant changes in the current between the emitter and collector. Utilizing this property allows for the amplification of input current or voltage. By treating the base of the bipolar transistor as the input terminal and the collector as the output terminal, this two-port network can be analyzed using Thevenin's theorem. Using equivalent principles, the bipolar transistor can be viewed as a voltage-controlled current source or as a current-controlled voltage source. Furthermore, looking into the left side of the two-port network, the input impedance at the base is reduced to the base resistance, thereby lowering the loading requirements on the preceding stage circuit.

BTICINO electrical component applications

Basic circuits of analog integrated circuits include current sources, single-stage amplifiers, filters, feedback circuits, and current mirror circuits. Higher-level basic circuits composed of these include operational amplifiers and comparators. Even higher-level circuits include switched-capacitor circuits, phase-locked loops, and ADC/DAC. Based on the response relationship between output and input signals, analog integrated circuits can be further divided into two major categories: linear integrated circuits and nonlinear integrated circuits. The response between output and input signals in the former is typically linear; the output signal shape is similar to the input signal, only amplified by a fixed coefficient. In contrast, the response of the output signal to the input signal in nonlinear integrated circuits exhibits a nonlinear relationship, such as square or logarithmic relationships, hence they are called nonlinear circuits. Common nonlinear circuits include oscillators, timers, and phase-locked loop circuits. Typical applications of analog integrated circuits are shown in the figure below. External natural signals collected by various sensors or antennas, such as temperature, humidity, optical, piezoelectric, and acoustic sensors, are preprocessed by analog circuits and converted into suitable digital signals for input into digital systems. Signals processed by the digital system are then post-processed by analog circuits and converted into analog signals such as sound, images, and radio waves for output.

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