deko electrical components German deko models deko prices

deko electrical components are instruments used to transform voltage. However, the purpose of a transformer's voltage transformation is to facilitate power transmission, so its capacity is large, generally calculated in kilovolt-amperes or megavolt-amperes; whereas the purpose of a voltage transformer's voltage transformation is mainly to supply power to measuring instruments and relay protection devices, to measure line voltage, power, and energy, or to protect valuable equipment, motors, and transformers in the line when a fault occurs. Therefore, the capacity of a voltage transformer is very small, generally only a few volt-amperes or tens of volt-amperes, with a maximum not exceeding one thousand volt-amperes.

deko electrical component structure

The rated current of the fuse element is not equal to the rated current of the fuse. The rated current of the fuse element is selected based on the load current of the protected equipment. The rated current of the fuse should be greater than the rated current of the fuse element and determined in coordination with the main electrical appliance. The fuse mainly consists of 4 parts: the fuse element, the housing, and the support. The fuse element is the key component controlling the fusing characteristics. The material, dimensions, and shape of the fuse element determine the fusing characteristics. Fuse element materials are divided into two categories: low melting point and high melting point. Low melting point materials, such as lead and lead alloys, have a low melting point and fuse easily. Due to their higher resistivity, the cross-sectional dimensions of the fuse element made from them are larger, producing more metal vapor during fusing, making them suitable only for fuses with low breaking capacity. High melting point materials, such as copper and silver, have a high melting point and do not fuse easily. However, due to their lower resistivity, they can be made with smaller cross-sectional dimensions than low melting point fuse elements, producing less metal vapor during fusing, making them suitable for fuses with high breaking capacity. The shape of the fuse element is divided into wire-shaped and strip-shaped. Changing the shape of the variable cross-section can significantly alter the fusing characteristics of the fuse. Fuses have various fusing characteristic curves, suitable for the needs of different types of protected objects.

deko electrical component classification

1. By application: pressure-sensitive and force-sensitive sensors, position sensors, level sensors, energy consumption sensors, speed sensors, acceleration sensors, radiation sensors, thermal sensors. 2. By principle: vibration sensors, humidity-sensitive sensors, magnetic-sensitive sensors, gas-sensitive sensors, vacuum degree sensors, biological sensors, etc. 3. By output signal: (1) Analog sensors can convert the measured non-electrical quantity into an analog electrical signal. (2) Digital sensors: convert the measured non-electrical quantity into a digital output signal (including direct and indirect conversion). (3) Pseudo-digital sensors: convert the measured signal quantity into a frequency signal or short-period signal output (including direct or indirect conversion). (4) Switch sensors: when a measured signal reaches a specific threshold, the sensor correspondingly outputs a set low-level or high-level signal. 4. By manufacturing process: Integrated sensors are manufactured using standard production processes for silicon-based semiconductor integrated circuits. Usually, part of the circuit for preliminary processing of the measured signal is also integrated on the same chip. Thin-film sensors are formed by depositing a thin film of the corresponding sensitive material on a dielectric substrate (base plate). When using hybrid processes, part of the circuit can also be fabricated on this substrate. Thick-film sensors are made by coating a slurry of the corresponding material onto a ceramic substrate, usually made of alumina, followed by heat treatment to form the thick film. Ceramic sensors are produced using standard ceramic processes or certain variants (sol-gel, etc.). After appropriate preparatory operations, the formed elements are sintered at high temperatures. There are many common characteristics between thick-film and ceramic sensor processes; in some aspects, the thick-film process can be considered a variant of the ceramic process. Each process technology has its own advantages and disadvantages. Due to the lower capital investment required for research, development, and production, as well as the high stability of sensor parameters, it is more reasonable to use ceramic and thick-film sensors. 5. By measurement objective: Physical sensors are made using the characteristic that certain physical properties of the measured substance undergo significant changes. Chemical sensors are made using sensitive elements that can convert chemical quantities such as the composition and concentration of chemical substances into electrical quantities. Biological sensors are made using various biological or biomaterial characteristics to detect and identify chemical components in biological bodies. 6. By composition: (1) Basic sensors are the most fundamental single transformation devices. (2) Combined sensors are sensors composed of different single transformation devices. (3) Application-specific sensors are sensors composed of basic or combined sensors combined with other mechanisms. 12. By mode of action: Sensors can be divided into active and passive types based on their mode of action. Active sensors include acting-type and reaction-type. This type of sensor can emit a certain detection signal to the measured object, detect changes produced by the detection signal in the measured object, or form a signal by generating a certain effect in the measured object by the detection signal. Those detecting changes in the detection signal are called acting-type, while those detecting responses to form signals are called reaction-type. Radar and radio frequency range detectors are examples of acting-type, while photoacoustic effect analysis devices and laser analyzers are examples of reaction-type. Passive sensors only receive signals generated by the measured object itself, such as infrared radiation thermometers and infrared imaging devices.

deko electrical component parameters

The main parameters of transistors include current amplification factor, dissipation power, frequency characteristics, maximum collector current, maximum reverse voltage, and reverse current. Amplification factor: The DC current amplification factor, also known as the static current amplification factor or DC amplification ratio, refers to the ratio of the transistor's collector current to the base current when there is no changing signal input in the static state. AC amplification factor: The AC amplification factor, also known as the AC current amplification factor or dynamic current amplification factor, refers to the ratio of the change in the transistor's collector current to the change in base current under AC conditions. Dissipation power: Dissipation power, also known as the maximum allowable collector dissipation power PCM, refers to the maximum collector dissipation power when the transistor parameters do not exceed the specified allowable values. Dissipation power is closely related to the transistor's maximum allowable junction temperature and maximum collector current. When using a transistor, its actual power consumption must not exceed the PCM value, otherwise, the transistor will be damaged due to overload. When the transistor's operating frequency exceeds the cutoff frequency, its current amplification factor value will decrease as the frequency increases. The maximum oscillation frequency refers to the frequency at which the transistor's power gain drops to 8. Typically, the maximum oscillation frequency of high-frequency transistors is lower than the common-base cutoff frequency, while the characteristic frequency is higher than the common-base cutoff frequency and lower than the common-collector cutoff frequency. Maximum current: The maximum collector current refers to the maximum current allowed to pass through the transistor's collector. Maximum reverse voltage: The maximum reverse voltage refers to the highest working voltage allowed to be applied to the transistor during operation. It includes the collector-emitter reverse breakdown voltage, collector-base reverse breakdown voltage, and emitter-base reverse breakdown voltage. The collector reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and emitter when the transistor base is open. The base reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and base when the transistor emitter is open. The emitter reverse breakdown voltage refers to the maximum allowable reverse voltage between the emitter and base when the transistor collector is open. The reverse current between the bases, also known as the collector junction reverse leakage current, refers to the reverse current between the collector and base when the transistor emitter is open. The reverse breakdown current between the emitters refers to the reverse leakage current between the collector and emitter when the transistor base is open, also known as the penetration current. The smaller this current value, the better the performance of the transistor.

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