Digitronic electrical components Germany Digitronic model Digitronic price

Digitronic electrical components are fuses that can be operated multiple times, known in Japan as permanent fuses. Immediately after interrupting an overload or short-circuit current, the fusible element automatically restores to its original state. The housing is made of austenitic stainless steel, with a beryllium oxide ceramic core embedded in the center. The space between the stainless steel and the ceramic core is filled with glass to seal and secure the ceramic core. The fine pores of the ceramic core are filled with metallic sodium as the fusible element, and the void behind the piston is filled with argon gas to compress the metallic sodium. Under normal operating conditions, current can enter from lead terminal A, pass through the metallic sodium in the fine pores of the ceramic core, conduct to the stainless steel housing, and exit via output terminal B. When a short-circuit current passes through the fuse, the short-circuit current rapidly heats the metallic sodium in the fine pores of the ceramic core, causing it to change from a solid to a high-temperature, high-pressure plasma vapor. The resistivity increases rapidly, thereby strongly limiting the short-circuit current and interrupting the current instantly. When the interruption ends, the metallic sodium vapor immediately returns to liquid and solid states, while the argon gas again pushes the piston to compress the metallic sodium, re-establishing the circuit connection.

Digitronic electrical component characteristics

(1) volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually referred to as the diode's turn-on voltage, at which point the diode is in a fully conducting state; this voltage is usually called the diode's conduction voltage. For germanium diodes, when a reverse voltage is applied to the diode, the current is extremely small when the voltage value is low, and its current value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current begins to increase sharply, which is called reverse breakdown, and this voltage is called the diode's reverse breakdown voltage. The breakdown voltage values of different diode models vary greatly, ranging from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristics, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This region is called the dead zone. The forward voltage that cannot cause the diode to conduct is called the dead-zone voltage. When the forward voltage is greater than the dead-zone voltage, the electric field within the PN junction is overcome, and the diode conducts in the forward direction, with the current rising rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant; this voltage is called the diode's forward voltage. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction. This is called the threshold voltage or knee voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current passing through the diode is a reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in a cutoff state. This reverse current is also called reverse saturation current or leakage current, and the diode's reverse saturation current is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes; the reverse saturation current of low-power silicon tubes is on the order of nA, and that of low-power germanium tubes is on the order of μA. When the temperature rises, the semiconductor is thermally excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode's reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, its unidirectional conductivity is not necessarily permanently destroyed; after removing the applied voltage, its performance can still recover; otherwise, the diode will be damaged. Therefore, excessively high reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into two types based on mechanism: Zener breakdown and avalanche breakdown. In cases of high doping concentration, because the barrier region width is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, causing valence electrons to break free from covalent bond constraints and generate electron-hole pairs, resulting in a sharp increase in current. This type of breakdown is called Zener breakdown. If the doping concentration is lower, the barrier region width is wider, and Zener breakdown is less likely to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and collide with other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current. This type of breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode when it is subjected to ambient temperature and the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the device. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one-degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper frequency limit for diode operation. Since the diode, like the PN junction, has a junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. (9) Maximum rectified current: Maximum rectified current refers to the maximum allowable average forward current value when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the device causes the chip to heat up and the temperature to rise, exceeding the permissible limit will cause the chip to overheat and become damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed its maximum rectified current value during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the device will break down and lose its unidirectional conductivity. To ensure safe operation, a maximum reverse working voltage value is specified.

Digitronic electrical component classification

Light-emitting diodes can also be classified into ordinary monochrome LEDs, high-brightness LEDs, ultra-high-brightness LEDs, color-changing LEDs, flashing LEDs, voltage-controlled LEDs, infrared LEDs, and negative-resistance LEDs. The control modes for LED include constant current and constant voltage. There are various dimming methods, such as analog dimming and PWM dimming. Most LED units adopt constant current control, which helps maintain stable LED current, makes it less susceptible to changes in VF, and extends the service life of LED lighting fixtures.

Digitronic electrical component parameters

1. Nominal varistor voltage: Refers to the voltage value across the varistor when a pulse current of specified duration passes through it. 2. Voltage ratio: Refers to the ratio of the voltage value generated by the current of the varistor to the voltage value generated by the current of the varistor. 3. Maximum clamping voltage: The peak voltage across the varistor under the maximum pulse peak current Ip that the varistor can withstand and under a specified waveform. 4. Residual voltage ratio: When the current passing through the varistor is at a certain value, the voltage generated across it is called the residual voltage for that current value. The residual voltage ratio is the ratio of the residual voltage to the nominal voltage. 5. Current handling capacity: Current handling capacity, also known as surge current rating, refers to the maximum pulse current value allowed to pass through the varistor under specified conditions. 6. Leakage current: Leakage current, also known as standby current, refers to the current flowing through the varistor at a specified temperature and maximum DC voltage. 7. Voltage temperature coefficient: Refers to the rate of change of the varistor's nominal voltage within a specified temperature range, i.e., the relative change in voltage across the varistor when the temperature changes while the current passing through the varistor remains constant. 8. Current temperature coefficient: Refers to the relative change in current flowing through the varistor when the temperature changes while the voltage across the varistor remains constant. 9. Voltage nonlinearity coefficient: Refers to the ratio of the static resistance value to the dynamic resistance value of the varistor under a given applied voltage. 10. Insulation resistance: Refers to the resistance value between the lead wires of the varistor and the insulating surface of the resistor body. 11. Static capacitance: Refers to the inherent capacitance of the varistor itself. 12. Rated power: The maximum power that causes a change in varistor voltage when operating at a specific ambient temperature. 20. Maximum impulse current: The maximum impulse current that causes a change in varistor voltage when the varistor is impacted by a specific pulse current once or twice.

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