EPLAX electrical components German EPLAX models EPLAX prices

EPLAX electrical components are high-power electronic components, also known as thyristors. They offer advantages such as compact size, high efficiency, and long service life. In automatic control systems, they can serve as high-power drive devices, enabling low-power control elements to manage high-power equipment. They are widely used in AC/DC motor speed control systems, power regulation systems, and servo systems. Thyristors are categorized into unidirectional thyristors and bidirectional thyristors. Bidirectional thyristors are also called triacs, abbreviated as TRIAC. A bidirectional thyristor is structurally equivalent to two unidirectional thyristors connected in reverse parallel; this type of thyristor features bidirectional conduction capability. Its on/off state is determined by the gate terminal G. Applying a positive pulse (or negative pulse) to the gate terminal G enables forward (or reverse) conduction. The advantages of this device include a simple control circuit and no reverse voltage withstand issues, making it particularly suitable for use as an AC contactless switch.

EPLAX electrical component parameters

The main parameters of a transistor include the current amplification factor, power dissipation, frequency characteristics, maximum collector current, maximum reverse voltage, and reverse current. Amplification factor: The DC current amplification factor, also known as the static current amplification factor or DC amplification ratio, refers to the ratio of the transistor's collector current to its base current when there is no changing signal input under static conditions. AC amplification factor: The AC amplification factor, also known as the AC current amplification factor or dynamic current amplification factor, refers to the ratio of the change in the transistor's collector current to the change in its base current under AC conditions. Power dissipation: Power dissipation, also referred to as the maximum allowable collector power dissipation PCM, is the maximum collector power dissipation when the transistor's parameter variations do not exceed specified allowable limits. Power dissipation is closely related to the transistor's maximum allowable junction temperature and maximum collector current. During operation, the actual power consumption of the transistor must not exceed the PCM value; otherwise, the transistor may be damaged due to overload. When the operating frequency of the transistor exceeds the cutoff frequency, its current amplification factor decreases as the frequency increases. The maximum oscillation frequency is the frequency at which the transistor's power gain drops to 1. Typically, the maximum oscillation frequency of a high-frequency transistor is lower than the common-base cutoff frequency, while the characteristic frequency is higher than the common-base cutoff frequency but lower than the common-collector cutoff frequency. Maximum current: The maximum collector current refers to the highest current allowed to pass through the transistor's collector. Maximum reverse voltage: The maximum reverse voltage refers to the highest working voltage that can be applied to the transistor during operation. It includes the collector-emitter reverse breakdown voltage, collector-base reverse breakdown voltage, and emitter-base reverse breakdown voltage. The collector reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and emitter when the transistor's base is open-circuited. The base reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and base when the transistor's emitter is open-circuited. The emitter reverse breakdown voltage refers to the maximum allowable reverse voltage between the emitter and base when the transistor's collector is open-circuited. The reverse current between the base terminals, also known as the collector junction reverse leakage current, refers to the reverse current between the collector and base when the transistor's emitter is open-circuited. The reverse breakdown current between the emitter terminals refers to the reverse leakage current between the collector and emitter when the transistor's base is open-circuited, also known as the penetration current. A smaller value of this current indicates better transistor performance.

EPLAX electrical component characteristics

The main parameters characterizing resistor properties include nominal resistance and its tolerance, rated power, load characteristics, and temperature coefficient of resistance. Load characteristics: When the ambient operating temperature is below tR, the resistor must not exceed its rated power. When the temperature exceeds tR, the load power must be derated. Each resistor type has specified load characteristics. Additionally, allowable load power may be reduced under low atmospheric pressure. Under pulse load conditions, the average pulse power is significantly lower than the rated power, and separate specifications usually apply. Within the specified ambient temperature range, the average relative change in resistance per 4 °C change in temperature is expressed in ppm/°C. In addition to the above parameters, other technical indicators include nonlinearity (the degree of deviation from a linear relationship between current and applied voltage), voltage coefficient (the relative rate of change in resistance per volt change in applied voltage), current noise (the ratio of the RMS noise voltage generated by current flow within the resistor body to the test voltage, expressed as the current noise index), high-frequency characteristics (the curve showing resistance decrease with increasing operating frequency due to distributed capacitance and inductance within the resistor body), and long-term stability (the process of irreversible resistance changes caused by environmental conditions during prolonged use or storage).

EPLAX electrical component classification

a. By material: silicon transistors, germanium transistors. b. By structure: NPN, PNP. c. By function: switching transistors, power transistors, Darlington transistors, photosensitive transistors, etc. d. By power rating: low-power transistors, medium-power transistors, high-power transistors. e. By operating frequency: low-frequency transistors, high-frequency transistors, ultra-high-frequency transistors. f. By structural technology: alloy transistors, planar transistors. g. By mounting method: through-hole transistors, surface-mount transistors.

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