euchner electrical components Germany euchner model euchner price

euchner electrical components utilize the good conductivity and fluidity of mercury to control the opening and closing of electrical circuits. They are composed of glass tubes, mercury, fixed electrodes, lead wires, etc. After evacuating the air from the tube, it is filled with various gases and sealed. It is suitable for environments with dust, oil, water vapor, and corrosive gases, and can also be used as an explosion-proof switch in places with explosive gases. Given the high surface tension and specific gravity of the mercury inside the tube, along with its fluidity, the position of the mercury changes immediately with even a slight tilt of the glass tube, and contacts the electrodes via surface contact, thus enabling the switching of high AC and DC currents. Additionally, this type of switch features a lifespan of several million cycles at rated current, small size, high sensitivity, no mechanical noise, and low cost, so it has always been used as a switch for automatic control.

euchner electrical component classification

1. By application: pressure-sensitive and force-sensitive sensors, position sensors, level sensors, energy consumption sensors, speed sensors, acceleration sensors, radiation sensors, thermal sensors. 2. By principle: vibration sensors, humidity-sensitive sensors, magnetic-sensitive sensors, gas-sensitive sensors, vacuum degree sensors, biological sensors, etc. 3. By output signal: (1) Analog sensors convert the measured non-electrical quantity into an analog electrical signal. (2) Digital sensors: convert the measured non-electrical quantity into a digital output signal (including direct and indirect conversion). (3) Pseudo-digital sensors: convert the measured signal quantity into a frequency signal or short-period signal output (including direct or indirect conversion). (4) Switch sensors: when a measured signal reaches a specific threshold, the sensor correspondingly outputs a set low-level or high-level signal. 4. By manufacturing process: Integrated sensors are manufactured using standard production processes for silicon-based semiconductor integrated circuits. Usually, part of the circuit for preliminary processing of the measured signal is also integrated on the same chip. Thin-film sensors are formed by depositing thin films of corresponding sensitive materials on a dielectric substrate (base plate). When using hybrid processes, part of the circuit can also be fabricated on this substrate. Thick-film sensors are made by coating slurry of corresponding materials onto ceramic substrates, typically made of alumina, followed by heat treatment to form the thick film. Ceramic sensors are produced using standard ceramic processes or their variants (sol-gel, etc.). After appropriate preparatory operations, the formed elements are sintered at high temperatures. There are many common characteristics between thick-film and ceramic sensor processes; in some aspects, thick-film process can be considered a variant of ceramic process. Each process technology has its own advantages and disadvantages. Due to lower capital investment required for research, development, and production, as well as the high stability of sensor parameters, it is more reasonable to adopt ceramic and thick-film sensors. 5. By measurement purpose: Physical sensors are made using the characteristic that certain physical properties of the measured substance undergo significant changes. Chemical sensors are made using sensitive elements that can convert chemical quantities such as composition and concentration of chemical substances into electrical quantities. Biological sensors are made using various biological or biomaterial characteristics to detect and identify chemical components in living organisms. 6. By structure: (1) Basic sensors are the most fundamental single transformation devices. (2) Combined sensors are sensors constructed by combining different single transformation devices. (3) Application-specific sensors are sensors constructed by combining basic or combined sensors with other mechanisms. 18. By mode of action: Sensors can be divided into active and passive types based on their mode of action. Active sensors include acting and reaction types. This type of sensor can emit a certain detection signal to the measured object, detect changes produced in the measured object by the detection signal, or form a signal by generating some effect in the measured object by the detection signal. Those detecting changes in the detection signal are called acting type, while those detecting responses to form signals are called reaction type. Radar and radio frequency range detectors are examples of acting type, while photoacoustic effect analysis devices and laser analyzers are examples of reaction type. Passive sensors only receive signals generated by the measured object itself, such as infrared radiation thermometers and infrared imaging devices.

euchner electrical component characteristics

The most important characteristic of a diode is its unidirectional conductivity. In a circuit, current can only flow into the anode of the diode and out of the cathode. 1. Forward characteristics: In electronic circuits, when the anode of the diode is connected to a high potential terminal and the cathode to a low potential terminal, the diode conducts. This connection method is called forward bias. It must be noted that when the forward voltage applied across the diode is very small, the diode still does not conduct, and the forward current flowing through the diode is very weak. Only when the forward voltage reaches a certain value can the diode truly conduct. After conduction, the voltage across the diode remains basically unchanged, known as the "forward voltage drop" of the diode. 11. Reverse characteristics In electronic circuits, when the anode of the diode is connected to a low potential terminal and the cathode to a high potential terminal, almost no current flows through the diode, and the diode is in a cutoff state. This connection method is called reverse bias. When the diode is under reverse bias, there is still a weak reverse current flowing through the diode, called leakage current. When the reverse voltage across the diode increases to a certain value, the reverse current increases sharply, and the diode loses its unidirectional conductivity characteristic. This state is called diode breakdown. The injection current of a laser diode must be greater than the critical current density to satisfy the population inversion condition and emit laser light. The critical current density is related to the junction temperature and indirectly affects efficiency. During high-temperature operation, the critical current increases, efficiency decreases, and components may even be damaged.

euchner electrical component principles

NPN type bipolar transistors can be viewed as two diodes joined together with a common anode. In the normal operating state of a bipolar transistor, the base-emitter junction is in a forward-biased state, while the base-collector junction is in a reverse-biased state. When no external voltage is applied, the electron concentration in the N region of the emitter junction is greater than that in the P region, and some electrons will diffuse into the P region. Similarly, some holes in the P region will also diffuse into the N region. Thus, a space charge region forms on the emitter junction, generating an internal electric field directed from the N region to the P region. This electric field hinders the further occurrence of the above diffusion process, thereby achieving dynamic equilibrium. At this point, if a forward voltage is applied to the emitter junction, the dynamic equilibrium between the carrier diffusion motion and the internal electric field in the depletion layer will be broken, causing thermally excited electrons to inject into the base region. In NPN type transistors, the base region is P type doped, where holes are the majority dopants, so electrons in this region are called "minority carriers". Electrons injected from the emitter into the base region partly recombine with the majority carrier holes here. On the other hand, due to the low doping level and thin physical dimensions of the base region, and because the collector junction is reverse-biased, most electrons will reach the collector region via drift motion, forming the collector current. To alleviate electron recombination before reaching the collector junction as much as possible, the base region of the transistor must be made sufficiently thin so that the time required for carrier diffusion is shorter than the lifetime of semiconductor minority carriers, and the base thickness must be much smaller than the electron diffusion length. In modern bipolar transistors, the typical thickness of the base region is a few tenths of a micron. It should be noted that although both the collector and emitter are N type doped, their doping levels and physical properties are not the same, so bipolar transistors must be distinguished from the form of two diodes connected in series in opposite directions.

Weidou Intelligent Technology specializes in selling German euchner connectors, euchner switches, euchner relays, euchner controllers, euchner plugs, euchner sensors, euchner resistors, euchner capacitors, euchner buses, euchner modules, euchner cables, euchner power supplies, euchner interfaces, euchner gateways, euchner circuit breakers, euchner original imports from Germany. Welcome customers to inquire and order.