Glomex electrical components German Glomex models Glomex prices

Glomex electrical components refer to electronic components that can open a circuit, interrupt current flow, or direct it to other circuits. The most common switches are manually operated electromechanical devices with one or more electrical contacts. "Closed" contacts indicate conduction, allowing current to flow; "open" switches indicate non-conduction, forming an open circuit and preventing current flow. The simplest switch consists of two metal pieces called "contacts"; when they touch, current forms a loop, and when they do not, the current path is open. When selecting contact metals, their resistance to corrosion must be considered, as most metals form insulating oxides after oxidation, preventing normal contact operation. Contact metal selection must also consider factors such as electrical conductivity, hardness, mechanical strength, cost, and toxicity. Corrosion-resistant metals are sometimes plated onto the contacts. Plating is generally applied to the contact surfaces to prevent performance degradation due to oxides. Sometimes non-metallic conductive materials, such as conductive plastics, are used for contact surfaces. In addition to contacts, switches have moving parts that make or break the connection. Switches can be classified by their moving parts into lever switches, push-button switches, rocker switches, etc., and the moving parts can also be other types of mechanical linkages.

Glomex electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small at low voltage values; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually called the diode's turn-on voltage, and the diode is in a fully conducting state; this voltage is usually called the diode's conduction voltage. For germanium diodes, when a reverse voltage is applied, the current is extremely small at low voltage values, known as the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, known as reverse breakdown, and this voltage is called the diode's reverse breakdown voltage. The breakdown voltage values vary significantly among different diode models, ranging from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristic, the forward voltage is too small to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero; this region is called the dead zone. The forward voltage that cannot cause the diode to conduct is called the dead-zone voltage. When the forward voltage exceeds the dead-zone voltage, the electric field within the PN junction is overcome, the diode conducts in the forward direction, and the current rises rapidly with increasing voltage. Within the normal operating current range, the terminal voltage of the conducting diode remains almost constant; this voltage is called the diode's forward voltage. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction; this is called the threshold voltage or knee voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current through the diode is a reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called the reverse saturation current or leakage current, and the diode's reverse saturation current is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes; the reverse saturation current of low-power silicon tubes is in the order of nA, and that of low-power germanium tubes is in the order of μA. As the temperature rises, the semiconductor is thermally excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases; this phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode's reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity is not necessarily permanently destroyed; after removing the applied voltage, its performance can still recover; otherwise, the diode is damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into Zener breakdown and avalanche breakdown based on the mechanism. In cases of high doping concentration, because the barrier region width is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, freeing valence electrons from covalent bonds and generating electron-hole pairs, causing a sharp increase in current; this breakdown is called Zener breakdown. If the doping concentration is lower, the barrier region width is wider, and Zener breakdown is less likely to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current; this breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode when it is subjected to ambient temperature and the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the device. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper frequency limit for diode operation. Since the diode, like the PN junction, has junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. (9) Maximum rectified current: Maximum rectified current refers to the maximum allowable average forward current when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the device causes the chip to heat up and the temperature to rise, exceeding the permissible limit will cause the chip to overheat and become damaged. Therefore, under specified heat dissipation conditions, the diode's maximum rectified current value should not be exceeded during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the device will break down and lose its unidirectional conductivity. To ensure safe operation, a maximum reverse working voltage value is specified.

Glomex electrical component features

Mercury switches achieve switching on and off by the movement of mercury encapsulated in a glass or metal housing. Therefore, compared with mechanical switches, mercury switches have many characteristics: (1) Can be used in harsh environmental conditions. Since mercury switches are sealed, the internal mercury is isolated from the outside, so they can be used in environments with oil, steam, dust, and corrosive gases. (2) Small external force required for switching. Mercury is the only metal that remains liquid at room temperature; it has high surface tension and specific gravity. Only a slight external force is needed to tilt the mercury switch, causing the mercury to move and achieve switching. (3) Mercury has good conductivity, and the contact resistance between mercury switch electrodes is generally very small. (4) The current allowed to pass through a mercury switch depends on the electrode material. (5) Since the switching of a mercury switch is determined by the gravity of the mercury, it can work reliably for a long time. (6) The electrode contacts are liquid contacts, producing no noise. (7) Since mercury can flow, as long as the acceleration exceeds the set value, the mercury switch can turn on or off, so it can be used as a vibration-sensitive element. (8) Small size, diverse forms, and fully sealed devices. (9) Simple structure and low price. (10) High quality, premium products, suitable for beginners

Glomex electrical component classification

Light-emitting diodes can also be divided into ordinary monochrome LEDs, high-brightness LEDs, ultra-high-brightness LEDs, color-changing LEDs, flashing LEDs, voltage-controlled LEDs, infrared LEDs, and negative-resistance LEDs. The control modes of LED include constant current and constant voltage. There are various dimming methods, such as analog dimming and PWM dimming. Most LED adopt constant current control, which keeps the LED current stable, is not easily affected by changes in VF, and can extend the service life of LED lamps.

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