hengstler electrical components Germany hengstler model hengstler price

hengstler electrical components are parts of electronic components and small electrical machines and instruments. They often consist of several parts and are interchangeable within similar products. They often refer to certain parts in the electrical, radio, and instrumentation industries. In practice, electronic components is the general term for components and devices.

hengstler electrical component characteristics

The main parameters characterizing resistance properties include nominal resistance and its tolerance, rated power, load characteristics, and resistance temperature coefficient. Load characteristics: When the ambient operating temperature is below tR, the resistor must not exceed its rated power. When it exceeds tR, the load power must be reduced. Each resistor has specified load characteristics. In addition, the allowable load may be correspondingly reduced under low air pressure. Under pulse load, the average pulse power is far lower than the rated power, and separate specifications usually apply. Within the specified ambient temperature range, the average relative change in resistance per 1 °C change in temperature is expressed in ppm/°C. In addition to the above parameters, there are other technical indicators such as nonlinearity (the degree to which the current-voltage characteristic deviates from a linear relationship), voltage coefficient (the relative rate of change in resistance per volt change in applied voltage), current noise (the ratio of the RMS value of the noise potential generated by current flow within the resistor body to the test voltage, expressed by the current noise index), high-frequency characteristics (the curve showing that resistance decreases as operating frequency increases due to the influence of distributed capacitance and inductance within the resistor body), and long-term stability (the process of irreversible change in resistance due to environmental conditions during long-term use or storage).

hengstler electrical component characteristics

The characteristics of an inductor are exactly opposite to those of a capacitor. It has the property of blocking alternating current while allowing direct current to pass smoothly. The resistance when a DC signal passes through the coil is just the resistance of the wire itself, resulting in a very small voltage drop. When an AC signal passes through the coil, a self-induced electromotive force is generated across the coil terminals. The direction of this self-induced EMF is opposite to that of the applied voltage, hindering the passage of AC. Therefore, the characteristic of an inductor is to pass DC and block AC; the higher the frequency, the greater the coil impedance. Inductors often work together with capacitors in circuits to form LC filters and LC oscillators. In addition, people utilize the properties of inductance to manufacture chokes, transformers, relays, and other devices. Passing DC: This means the inductor presents a conductive state to DC. If the resistance of the inductor coil is ignored, DC can pass through the inductor unimpeded. For DC, the coil's own resistance offers very little opposition, so it is often neglected in circuit analysis. Blocking AC: When AC passes through the inductor coil, the inductor opposes the AC. This opposition to AC is the inductive reactance of the coil.

hengstler electrical component principle

1. Emission of electrons from the emitter to the base: The power supply Ub is applied across the emitter junction via resistor Rb. The emitter junction is forward-biased, causing the majority carriers (free electrons) in the emitter region to continuously cross the emitter junction into the base region, forming the emitter current Ie. At the same time, majority carriers in the base region also diffuse toward the emitter region, but since their concentration is far lower than that of the emitter region carriers, this current can be neglected. Therefore, the emitter junction current is considered to be primarily electron flow. 2. Diffusion and recombination of electrons in the base region: After entering the base region, electrons first accumulate near the emitter junction, gradually forming an electron concentration gradient. Driven by this concentration difference, the electron flow diffuses through the base region toward the collector junction and is pulled into the collector region by the collector junction electric field, forming the collector current Ic. A very small portion of electrons (because the base region is very thin) recombine with holes in the base region. The ratio of the diffusing electron flow to the recombining electron flow determines the amplification capability of the transistor. 6. Collection of electrons by the collector region: Due to the large reverse voltage applied externally to the collector junction, the electric field force generated by this reverse voltage prevents electrons in the collector region from diffusing into the base region and simultaneously pulls electrons that have diffused near the collector junction into the collector region, thereby forming the main collector current Icn. In addition, minority carriers (holes) in the collector region also undergo drift motion, flowing toward the base region to form a reverse saturation current, denoted by Icbo. Its value is very small, but it is extremely sensitive to temperature.

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