
PANLUX electrical components Germany PANLUX model PANLUX price
PANLUX electrical components are components of electronic components and small machines and instruments. They themselves often consist of several parts and can be used interchangeably in similar products; they often refer to certain parts in the electrical, radio, and instrumentation industries, and are a general term for electronic devices such as capacitors, transistors, hairsprings, and mainsprings. Common examples include diodes. Electronic components include: resistors, capacitors, inductors, potentiometers, electron tubes, heat sinks, electromechanical components, connectors, discrete semiconductor devices, electroacoustic devices, laser devices, electronic display devices, optoelectronic devices, sensors, power supplies, switches
- SKU
- _P004835928
- Category
- Electrical and Electronic Components
- Brand
- PANLUX
- Tags
- Connectors / Cable / Switch / Relay / Controller / Germany PANLUX
PANLUX electrical component characteristics
Sensitivity refers to the ratio of the change in output to the change in input of a sensor under steady-state operating conditions. It is the slope of the output-input characteristic curve. If there is a linear relationship between the sensor's output and input, then the sensitivity S is a constant. Otherwise, it will vary with changes in the input. The dimension of sensitivity is the ratio of the dimensions of the output and input quantities. When the dimensions of the sensor's output and input quantities are the same, sensitivity can be understood as the amplification factor. Increasing sensitivity can achieve higher measurement accuracy. However, the higher the sensitivity, the narrower the measurement range, and the stability is often poorer.
PANLUX electrical component principle
A varactor diode is a type of special diode. When a forward bias voltage is applied, a large current is generated, the PN (positive and negative poles) junction depletion region narrows, the capacitance increases, producing a diffusion capacitance effect; when a reverse bias voltage is applied, a transition capacitance effect is produced. However, since leakage current is generated when forward bias is applied, reverse bias is supplied in applications. A varactor diode is also called a voltage-controlled variable capacitor, which is a semiconductor that changes its junction capacitance according to the provided voltage change. That is to say, as a variable capacitor, it can be applied to resonant circuits such as FM tuners and TV tuners, and FM modulation circuits. In fact, we can view it as a PN junction. We consider that if a reverse voltage V is applied to the PN junction (varactor diodes are used in reverse), then electrons in the N-type semiconductor are drawn to the positive pole, and holes in the P-type semiconductor are drawn to the negative pole, forming a depletion layer with neither electrons nor holes. We define the width of this depletion layer as d, which changes with the reverse voltage V. In this way, as the reverse voltage V increases, the depletion layer d widens, and the diode's capacitance C decreases (according to C=kS/d), while as the reverse voltage decreases, the depletion layer width d narrows, and the diode's capacitance increases. The change in reverse voltage V causes changes in the depletion layer, thereby changing the junction capacitance C of the voltage-controlled variable capacitor. The goal is achieved. A varactor diode is a semiconductor device made using the principle of variable capacitance between PN junctions, used as a variable capacitor in high-frequency tuning, communication, and other circuits. Varactor diodes have various packaging forms, including glass encapsulation (glass-sealed), plastic encapsulation (plastic-sealed), metal casing encapsulation (metal-sealed), and leadless surface mount packaging. Typically, low and medium power varactor diodes use glass-sealed, plastic-sealed, or surface mount packaging, while higher power varactor diodes mostly use metal-sealed packaging. Common varactor diode parameters.
PANLUX electrical component principle
A crystal diode is a p-n junction formed by p-type semiconductor and n-type semiconductor, where a space charge layer is formed on both sides of the interface, and a built-in electric field is established. When no external voltage is applied, it is in an electrical equilibrium state because the diffusion current caused by the carrier concentration difference across the p-n junction equals the drift current caused by the built-in electric field. When there is a forward voltage bias from the outside, the mutual cancellation effect of the external electric field and the built-in electric field increases the carrier diffusion current, causing a forward current. When there is a reverse voltage bias from the outside, the external electric field and the built-in electric field are further strengthened, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the space charge layer of the p-n junction reaches a critical value, causing a carrier multiplication process, generating a large number of electron-hole pairs, and producing a very large reverse breakdown current, known as the diode breakdown phenomenon.
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