Pizzato Elettrica electrical components Germany Pizzato Elettrica models Pizzato Elettrica prices

Pizzato Elettrica electrical components are switches controlled by electromagnets, that is, a combination of an electromagnet and a switch. When the electromagnet coil is energized, it generates electromagnetic attraction, causing the movable iron core to push or pull the switch contacts to close, thereby connecting the controlled circuit. Electromagnetic switches are widely used in various industries, most commonly as contactors in the industrial sector. An electromagnetic switch is the control switch on a starter motor and is one of the three main components of a starter motor (DC motor, transmission engagement mechanism, electromagnetic switch). Its working principle is that the coil generates electromagnetic attraction when energized, causing the movable iron core to move. This simultaneously pulls the transmission engagement mechanism to move the starter pinion forward to engage with the engine flywheel ring gear, and pushes the switch contacts to connect, allowing the DC motor to operate and thus drive the engine to start.

Pizzato Elettrica electrical component principles

Optical measurement and control systems are diverse, developed based on different principles of how luminous flux acts on photoelectric elements. According to the nature of the output from the photoelectric element (optical measurement and control system), they can be divided into two categories: analog photoelectric sensors and pulse (switching) photoelectric sensors. Analog photoelectric sensors convert the measured quantity into a continuously changing photocurrent, exhibiting a single-valued relationship with the measured quantity. Based on the method of measuring the target object, analog photoelectric sensors can be classified into three major types: transmissive (absorptive), diffuse reflective, and light-blocking (beam interruption). The so-called transmissive type refers to placing the measured object in the optical path; the light energy emitted by a constant light source passes through the measured object, and after partial absorption, the transmitted light is projected onto the photoelectric element. The so-called diffuse reflective type refers to light emitted by a constant light source being projected onto the measured object, then reflected from the surface of the measured object onto the photoelectric element. The so-called light-blocking type refers to the scenario where the luminous flux emitted by the light source is partially blocked by the measured object, causing a change in the luminous flux projected onto the photoelectric element; the degree of change is related to the position of the measured object in the optical path. Photodiodes are the most common optical sensors. The appearance of a photodiode is similar to that of a general diode. When there is no illumination, it behaves like an ordinary diode with a very small reverse current, known as the dark current of the photodiode. When illuminated, carriers are excited, generating electron-hole pairs, referred to as photo-carriers. Under the influence of an external electric field, these photo-carriers participate in conduction, forming a reverse current much larger than the dark current; this reverse current is called the photocurrent. The magnitude of the photocurrent is proportional to the light intensity, allowing an electrical signal that varies with light intensity to be obtained across the load resistor.

Pizzato Elettrica electrical component classification

In different application scenarios, the purpose of applying varistors varies, and the voltage/current stress acting on the varistor is not the same; therefore, the requirements for the varistor differ. Distinguishing these differences is crucial for correct usage. Depending on the purpose of use, varistors can be divided into two main categories: protection varistors and circuit-function varistors. (1) Protection varistors: 1 Distinguish between varistors used for power supply protection and those used for signal line or data line protection, as they must meet different technical standard requirements. 2 Depending on the continuous operating voltage applied to the varistor, varistors used across power lines can be distinguished into two types: AC type and DC type. The aging characteristics of varistors under these two voltage stresses differ. 13 Depending on the abnormal overvoltage characteristics withstandable by the varistor, varistors can be classified into three types: surge suppression type, high-power type, and high-energy type. (2) Surge suppression type: Refers to varistors used to suppress transient overvoltages such as lightning overvoltage and switching overvoltage. The occurrence of such transient overvoltages is random and non-periodic, and the peak current and voltage may be very high. The vast majority of varistors belong to this category. (3) High-power type: Refers to varistors used to absorb continuous pulse groups that occur periodically, such as varistors connected in parallel to switching power supply converters. Here, impulse voltages occur periodically with a known period, and the energy value can generally be calculated. Although the voltage peak is not very high, the average power is considerable due to the high frequency of occurrence. (4) High-energy type: Refers to varistors used to absorb magnetic energy from large inductive coils such as generator excitation coils and lifting electromagnet coils. For such applications, the main technical indicator is energy absorption capacity. The protective function of varistors can be repeated multiple times in most application scenarios, but sometimes they are designed as one-time protective devices similar to current fuses. For example, varistors with short-circuit contacts connected in parallel to the loads of certain current transformers.

Pizzato Elettrica electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metal materials such as aluminum, gold, molybdenum, nickel, and titanium can be selected, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without making the series resistance too large, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is well known, there are a large number of conductive electrons inside a metal conductor. When metal contacts a semiconductor (with a distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the energy levels corresponding to the conduction band of the semiconductor within the metal, the electron density is lower than that in the semiconductor's conduction band. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, negative charge is distributed only within a thin layer on the surface with atomic-scale thickness. For N type semiconductors, donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a potential barrier, with the depletion layer existing only on the N type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N type region to the metal. As thermionic emission increases the built-in field, the drift current opposite to the diffusion current increases, eventually reaching dynamic equilibrium and forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (positive voltage to the metal, negative voltage to the semiconductor), the built-in field weakens, the barrier on the semiconductor side lowers, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field strengthens, the barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, like a SBD-PN junction diode, it is a nonlinear device with unidirectional conductivity.

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