REO AG electrical components, German REO AG models, REO AG pricing

REO AG electrical components are energy conversion devices that convert DC electrical energy into AC electrical energy with a specific frequency; the circuit they form is called an oscillating circuit. Simply put, an oscillator is a frequency source, generally used in phase-locked loops. In detail, it is a device that can convert DC electrical energy into AC electrical energy on its own without external signal excitation. It is generally divided into two types: positive feedback and negative resistance. The term "oscillation" implies AC; the oscillator includes the process and function of transitioning from non-oscillating to oscillating. Devices capable of converting DC electrical energy into AC electrical energy are called "oscillators." Oscillators are mainly divided into two types: harmonic oscillators and relaxation oscillators. They are electronic components used to generate repetitive electronic signals (usually sine waves or square waves). The circuit they form is called an oscillating circuit. It is an electronic circuit or device that can convert DC power into AC signal output with a specific frequency. There are many types; classified by oscillation excitation method, they include self-excited oscillators and externally excited oscillators; classified by circuit structure, they include RC oscillators, LC oscillators, crystal oscillators, tuning fork oscillators, etc.; classified by output waveform, they include sine wave, square wave, and sawtooth wave oscillators. They are widely used in the electronics industry, medical field, scientific research, and other areas.

REO AG electrical component principles

The main principle of a diode is to utilize the unidirectional conductivity of the PN junction; adding leads and encapsulation to the PN junction forms a diode. A crystal diode consists of a PN junction formed by P-type semiconductor and N-type semiconductor. A space charge layer forms on both sides of the interface, establishing a built-in electric field. When no external voltage is applied, the diffusion current caused by the carrier concentration difference across the PN junction equals the drift current caused by the built-in electric field, resulting in an electrical equilibrium state. When forward biased by an external voltage, the mutual cancellation of the external electric field and the built-in electric field increases the carrier diffusion current, causing forward current. When reverse biased by an external voltage, the external electric field and the built-in electric field are further strengthened, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the space charge layer of the PN junction reaches a critical value, causing a carrier multiplication process that generates a large number of electron-hole pairs and a significant reverse breakdown current, known as the diode breakdown phenomenon. Reverse breakdown of the PN junction is categorized into Zener breakdown and avalanche breakdown.

REO AG electrical component characteristics

The static characteristics of a sensor refer to the relationship between the output and input quantities for static input signals. Since the input and output quantities are independent of time in this case, their relationship, i.e., the static characteristics of the sensor, can be described by an algebraic equation without time variables, or by a characteristic curve plotted with the input quantity as the abscissa and the corresponding output quantity as the ordinate. The main parameters characterizing the static characteristics of a sensor include: linearity, sensitivity, hysteresis, repeatability, and drift. (1) Linearity: Refers to the degree to which the actual relationship curve between the sensor's output and input deviates from the fitted straight line. It is defined as the ratio of the maximum deviation between the actual characteristic curve and the fitted straight line over the full scale range to the full-scale output value. (2) Sensitivity: Sensitivity is an important indicator of a sensor's static characteristics. It is defined as the ratio of the increment in the output quantity to the corresponding increment in the input quantity that causes it. S is used to denote sensitivity. (3) Hysteresis: Hysteresis is the phenomenon where the input-output characteristic curves do not coincide when the input quantity changes from small to large (forward stroke) and from large to small (reverse stroke). For the same magnitude of input signal, the output signals for the forward and reverse strokes are not equal; this difference is called the hysteresis error. (4) Repeatability: Repeatability refers to the degree of inconsistency in the characteristic curves obtained when the sensor's input quantity undergoes continuous multiple full-scale changes in the same direction. (5) Drift: Sensor drift refers to the phenomenon where the sensor's output changes over time while the input quantity remains constant. There are two causes of drift: one is the sensor's own structural parameters; the other is the surrounding environment (such as temperature, humidity, etc.). (6) Resolution: When the sensor's input slowly increases from a non-zero value, the output undergoes an observable change after exceeding a certain increment; this input increment is called the sensor's resolution, i.e., the minimum input increment. (7) Threshold: When the sensor's input slowly increases from zero, the output undergoes an observable change after reaching a certain value; this input value is called the sensor's threshold voltage.

REO AG electrical component principles

Lasing principle of laser diodes: The P-N junction in a laser diode is formed by two doped gallium arsenide layers. It has a parallel-end structure, parallel to a mirror at one end (highly reflective surface) and a partially reflective surface at the other. The wavelength of the emitted light is directly related to the length of the junction. When the P-N junction is forward biased by an external voltage source, electrons move through the junction and recombine as in a standard diode. When electrons recombine with holes, photons are released. These photons strike atoms, causing more photons to be released. As the forward bias current increases, more electrons enter the depletion region, leading to the emission of more photons. Eventually, some photons drifting randomly within the depletion region strike the reflective surfaces perpendicularly, reflecting back along their original path. The reflected photons are again reflected from the other end of the junction. This movement of photons from one end to the other occurs continuously multiple times. During the photon movement, more atoms release more photons due to the avalanche effect. This process of reflection and generation of increasing numbers of photons produces a very intense laser beam. Each photon generated in the emission process described above is identical to other photons in energy level, phase relationship, and frequency. Therefore, the emission process yields a laser beam of a single wavelength. To produce a laser beam, the current of the laser diode must exceed a certain threshold level. Current below the threshold level forces the diode to behave as an LED, emitting incoherent light.

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