Samwha electrical components Germany Samwha model Samwha price

Samwha electrical components consist of wire wound turn by turn around an insulating tube. The wires are mutually insulated, and the insulating tube can be hollow or contain an iron core or magnetic powder core. An inductor coil is a device that operates based on the principle of electromagnetic induction. When current flows through a wire, it generates an electromagnetic field around the wire, and this electromagnetic field induces effects on the wire itself within the field range. The effect on the wire generating the electromagnetic field is called "self-inductance," meaning the changing current generated by the wire produces a changing magnetic field, which further affects the current in the wire; the effect on other wires within this electromagnetic field range is called "mutual inductance." The electrical characteristics of an inductor coil are opposite to those of a capacitor: "passes low frequencies, blocks high frequencies." High-frequency signals encounter significant resistance when passing through an inductor coil and struggle to pass; whereas the resistance presented to low-frequency signals is relatively small, allowing them to pass more easily. The resistance of an inductor coil to direct current is almost zero. Resistance, capacitance, and inductance all present certain resistance to the flow of electrical signals in a circuit; this resistance is referred to as "impedance." The impedance presented by an inductor coil to current signals utilizes the self-inductance of the coil. Inductor coils are sometimes abbreviated as "inductance" or "coil," represented by the letter "L." When winding an inductor coil, the number of turns is generally referred to as the "number of turns" of the coil.

Samwha electrical component principles

A NPN type bipolar transistor can be viewed as two diodes connected with a common anode. In the normal operating state of a bipolar transistor, the base-emitter junction is forward-biased, while the base-collector junction is reverse-biased. Without external voltage, the electron concentration in the N region of the emitter junction is greater than that in the P region, causing some electrons to diffuse into the P region. Similarly, some holes from the P region will diffuse into the N region. Thus, a space charge region forms at the emitter junction, generating an internal electric field directed from the N region to the P region. This field hinders further diffusion, achieving dynamic equilibrium. At this point, if a forward voltage is applied to the emitter junction, the dynamic equilibrium between carrier diffusion and the internal electric field in the depletion layer is broken, injecting thermally excited electrons into the base region. In a NPN type transistor, the base region is P type doped, where holes are the majority carriers; thus, electrons in this region are called "minority carriers." Electrons injected from the emitter into the base region partly recombine with the majority carrier holes there. On the other hand, due to the low doping level and thin physical dimensions of the base region, and because the collector junction is reverse-biased, most electrons reach the collector region via drift motion, forming the collector current. To minimize recombination before electrons reach the collector junction, the base region must be made sufficiently thin so that the carrier diffusion time is shorter than the semiconductor minority carrier lifetime, and the base thickness must be much smaller than the electron diffusion length. In modern bipolar transistors, the typical base region thickness is a few tenths of a micron. Note that although both the collector and emitter are N type doped, their doping levels and physical properties differ; therefore, a bipolar transistor must be distinguished from two diodes connected in series in opposite directions.

Samwha electrical component structure

Commonly used is the unidirectional thyristor, also known as the ordinary thyristor. It consists of four layers of semiconductor material, has three PN junctions, and three external electrodes: the electrode drawn from the first layer of P type semiconductor is called the anode A; the electrode drawn from the third layer of P type semiconductor is called the gate G; and the electrode drawn from the fourth layer of N type semiconductor is called the cathode K. As seen from the circuit symbol, like a diode, it is a unidirectional conductive device, but with the addition of a gate G, giving it working characteristics completely different from a diode. Based on silicon single crystal, the P1N1P2N2 four-layer three-terminal device is internationally known as the silicon controlled rectifier, abbreviated as thyristor T, because its characteristics resemble those of a vacuum thyratron. Since thyristors were initially used in static rectification, they are also called silicon controlled rectifiers, abbreviated as SCR SCR. In terms of performance, SCRs not only have unidirectional conductivity but also possess controllability more valuable than silicon rectifier elements (commonly known as "dead silicon"). They have only two states: conduction and cutoff. SCRs can control high-power electromechanical equipment with milliampere-level currents. If this power is exceeded, switching losses increase significantly, reducing the allowable average current, and the rated current should be derated. SCRs have many advantages, such as controlling high power with low power, with power amplification factors reaching hundreds of thousands; extremely fast response, turning on and off within microseconds; contactless operation, spark-free and noise-free; high efficiency and low cost. Weaknesses of SCRs include poor static and dynamic overload capacity and susceptibility to interference causing false triggering. SCRs are mainly classified by appearance into bolt type, flat plate type, and flat bottom type. Structure of SCR components. Regardless of the SCR's shape, their cores consist of a four-layer P1N1P2N2 structure made of P type silicon and N type silicon. It has three PN junctions (J1, J2, J3). The anode A is drawn from the P1 layer of the J1 structure, the cathode K is drawn from the N2 layer, and the gate G is drawn from the P8 layer, making it a four-layer three-terminal semiconductor device.

Samwha electrical component performance

The performance of fiber optic connectors includes optical performance, as well as interchangeability, repeatability, tensile strength, temperature resistance, and mating cycles. 1. Optical performance: The main requirements for the optical performance of fiber optic connectors are insertion loss and return loss, the two most basic parameters. Insertion loss, or connection loss, refers to the loss of effective optical power in the link caused by the introduction of the connector. Lower insertion loss is better, generally required to be no greater than 0.5dB. Return loss refers to the connector's ability to suppress optical power reflection in the link, with a typical value of no less than 25dB. For connectors in practical applications, the ferrule surface undergoes specialized polishing to increase return loss, generally not lower than 45dB. 2. Interchangeability and repeatability: Fiber optic connectors are universal passive devices. Connectors of the same type can generally be combined arbitrarily and reused multiple times, with additional loss introduced typically less than 0.2dB. (3) Tensile strength: For assembled fiber optic connectors, the tensile strength is generally required to be no less than 90N. (4) Temperature: Generally, fiber optic connectors must operate normally within a temperature range of -40oC to +70oC. (5) Mating cycles: Most fiber optic connectors used can withstand more than l004 mating cycles.

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