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stg beikirch electrical components refer to the aggregate of service equipment provided for a specific group of traffic sources, such as trunk lines, switching devices, and control systems. The fundamental subject of traffic theory is the relationship between traffic volume, call loss, and bundle capacity; therefore, the trunk bundle is a key basic concept in traffic theory. A traffic source is the object served by the trunk bundle, typically referring to user equipment; in a broader sense, upstream equipment serves as the traffic source for downstream equipment. In telephone communications, a traffic source is also called a call source, and the number of service devices contained in a trunk bundle is referred to as the bundle capacity. Figure 1 is a schematic diagram of a trunk bundle. The capacity of this bundle is V, and it provides service to N traffic sources. Any traffic source initiating a call can occupy an idle service device within the bundle.

stg beikirch electrical component classification

(1) Point-contact diodes have a small PN junction contact area, cannot pass large forward currents or withstand high reverse voltages, but offer good high-frequency performance, making them suitable for use in high-frequency detection circuits and switching circuits. (2) Surface-contact diodes have a large PN junction contact area, can pass large currents, and can withstand high reverse voltages, making them suitable for use in rectifier circuits. (3) Planar diodes have a small PN junction area when used as switching transistors in pulse digital circuits, and a larger PN junction area when used for high-power rectification. (4) Zener diodes are a special type of surface-contact silicon semiconductor diode that provides voltage stabilization. The main difference between a Zener diode and a standard diode is that the Zener diode operates in the reverse breakdown state of the PN junction. By implementing process controls during manufacturing and limiting the magnitude of the reverse current during use, it is ensured that the Zener diode will not be damaged by overheating in the reverse breakdown state. Unlike standard diodes, the reverse breakdown of a Zener diode is reversible; as long as the current does not exceed the allowable value, the PN junction will not overheat and fail. When the external reverse voltage is removed, the Zener diode restores its original performance, giving it excellent repetitive breakdown characteristics. (5) Photodiodes, also known as photosensitive diodes, feature a glass window on their package to facilitate light reception. Their characteristic is that when light strikes the PN junction, electron-hole pairs are generated, increasing the concentration of minority carriers in the semiconductor. Under a certain reverse bias voltage, this causes the reverse current to increase. Therefore, the reverse current increases linearly with increasing light intensity. In the absence of light, the volt-ampere characteristics of a photodiode are similar to those of a standard diode. As light-controlled components, photodiodes can be used for various object detection, photoelectric control, and automatic alarm applications. When manufactured with a large area, a photodiode can serve as an energy source and is called a solar cell. In this case, it requires no external power supply and can directly convert light energy into electrical energy. (6) Light-emitting diodes are solid-state semiconductor display devices that directly convert electrical energy into light energy, abbreviated as LED. Similar to standard diodes, a light-emitting diode is formed by a PN structure. The PN junction of a light-emitting diode is encapsulated in a transparent plastic housing, with shapes including square, rectangular, and circular. Light-emitting diodes offer advantages such as low drive voltage, low operating current, strong resistance to vibration and shock, small size, high reliability, low power consumption, and long service life, making them widely used in signal indication circuits. In electronic technology, commonly used numeric displays operate on principles opposite to those of photodiodes. When a light-emitting diode is forward-biased and current flows, it emits light due to the energy released when electrons and holes recombine directly. Its spectral range is relatively narrow, with the wavelength determined by the base material used.

stg beikirch electrical component characteristics

The static characteristics of a sensor refer to the relationship between the output and input quantities for static input signals. Since the input and output quantities are independent of time in this state, their relationship, i.e., the static characteristics of the sensor, can be described by an algebraic equation without time variables, or by a characteristic curve plotted with the input quantity as the abscissa and the corresponding output quantity as the ordinate. The main parameters characterizing the static characteristics of a sensor include: linearity, sensitivity, hysteresis, repeatability, and drift. (1) Linearity: Refers to the degree to which the actual relationship curve between the sensor's output and input deviates from the fitted straight line. It is defined as the ratio of the maximum deviation between the actual characteristic curve and the fitted straight line over the full scale range to the full-scale output value. (2) Sensitivity: Sensitivity is an important indicator of a sensor's static characteristics. It is defined as the ratio of the increment in the output quantity to the corresponding increment in the input quantity that causes it. Sensitivity is denoted by S. (3) Hysteresis: Hysteresis is the phenomenon where the input-output characteristic curves do not coincide when the input quantity changes from small to large (forward stroke) and from large to small (reverse stroke). For the same magnitude of input signal, the output signals for the forward and reverse strokes are not equal; this difference is called the hysteresis error. (4) Repeatability: Repeatability refers to the degree of inconsistency in the characteristic curves obtained when the sensor's input quantity undergoes multiple consecutive full-scale changes in the same direction. (5) Drift: Sensor drift refers to the phenomenon where the sensor's output changes over time while the input quantity remains constant. There are two causes of drift: one is the sensor's own structural parameters, and the other is the surrounding environment (such as temperature and humidity). (6) Resolution: When the sensor's input slowly increases from a non-zero value, an observable change in the output occurs after exceeding a certain increment; this input increment is called the sensor's resolution, i.e., the minimum input increment. (7) Threshold: When the sensor's input slowly increases from zero, an observable change in the output occurs after reaching a certain value; this input value is called the sensor's threshold voltage.

stg beikirch electrical component structure

Commonly used thyristors are unidirectional thyristors, also known as standard thyristors. They consist of four layers of semiconductor material and have three PN junctions, with three external electrodes: the electrode drawn from the first layer of P-type semiconductor is called the anode A, the electrode drawn from the third layer of P-type semiconductor is called the gate G, and the electrode drawn from the fourth layer of N-type semiconductor is called the cathode K. As seen from the circuit symbol of a thyristor, it is a unidirectional conductive device like a diode, but with the addition of a gate G, which gives it operating characteristics completely different from those of a diode. Based on silicon monocrystal, the P1N1P2N2 four-layer, three-terminal device is internationally known as a silicon controlled rectifier because its characteristics are similar to those of a vacuum thyratron, abbreviated as thyristor T. Since thyristors were initially used in static rectification, they are also called silicon controlled rectifiers, abbreviated as SCR SCR. In terms of performance, SCRs not only possess unidirectional conductivity but also offer controllability more valuable than that of silicon rectifier elements (commonly known as "dead silicon"). They have only two states: conduction and blocking. SCRs can control high-power electromechanical equipment with milliampere-level currents. If this power is exceeded, the switching losses of the component increase significantly, and the allowable average current decreases; in this case, the nominal current should be derated. SCRs have many advantages, such as controlling high power with low power, with power amplification factors reaching hundreds of thousands; extremely fast response, turning on and off within microseconds; contactless operation, spark-free and noise-free; high efficiency and low cost. Weaknesses of SCRs include poor static and dynamic overload capability and susceptibility to interference causing false triggering. SCRs are mainly classified by appearance into bolt-type, flat-type, and flat-base types. Structure of SCR components. Regardless of the external shape of an SCR, their cores consist of a four-layer P1N1P2N2 structure composed of P-type silicon and N-type silicon. They have three PN junctions (J1, J2, J3). The anode A is drawn from the P1 layer of the J1 structure, the cathode K is drawn from the N2 layer, and the gate G is drawn from the P9 layer, making it a four-layer, three-terminal semiconductor device.

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