UNICONTROL electrical components Germany UNICONTROL model UNICONTROL price

UNICONTROL electrical component is a sensor that converts the state of the measured object into a measurable optical signal. The working principle of a fiber optic sensor is to guide the light beam from the light source into a modulator via an optical fiber. Inside the modulator, interaction with external measured parameters causes changes in the optical properties of the light, such as intensity, wavelength, frequency, phase, and polarization state, resulting in a modulated optical signal. This signal is then transmitted via optical fiber to a photodetector and demodulator to obtain the measured parameters. Throughout this process, the light beam is guided through the optical fiber, passes through the modulator, and is then emitted. In this process, the optical fiber first serves to transmit the light beam and second acts as an optical modulator.

UNICONTROL electrical component characteristics

Sensitivity refers to the ratio of the change in output to the change in input when the sensor is operating under steady-state conditions. It is the slope of the output-input characteristic curve. If there is a linear relationship between the sensor's output and input, then the sensitivity S is a constant. Otherwise, it will vary with changes in the input quantity. The dimension of sensitivity is the ratio of the dimensions of the output and input quantities. When the dimensions of the sensor's output and input quantities are the same, sensitivity can be understood as the amplification factor. Increasing sensitivity yields higher measurement accuracy. However, the higher the sensitivity, the narrower the measurement range, and stability often deteriorates.

UNICONTROL electrical component parameters

1. Stable voltage refers to the stable voltage value generated across the terminals of a Zener diode when it conducts the rated current. This value varies slightly with operating current and temperature. Due to differences in manufacturing processes, the stabilization voltage of Zener diodes of the same model is not completely identical. 2. Reverse leakage current refers to the current flowing through the Zener diode when it generates a stable voltage. Below this value, although the Zener diode can still regulate voltage, the regulation effect will degrade; above this value, as long as the rated power dissipation is not exceeded, it is permissible, and the voltage regulation performance will be better, but it will consume more electrical energy. 3. Dynamic resistance refers to the ratio of the change in voltage across the Zener diode to the change in current. This ratio varies with the operating current; generally, the larger the operating current, the smaller the dynamic resistance. 4. Rated power dissipation is determined by the allowable temperature rise of the chip, and its value is the product of the stable voltage and the maximum allowable current. 5. Temperature coefficient: If the temperature of the Zener diode changes, its stable voltage will also undergo slight changes. The relative change in voltage across the tube caused by a temperature change of 1℃ is the temperature coefficient (unit: %/℃). Generally speaking, a stabilization voltage below 6V belongs to Zener breakdown, and the temperature coefficient is negative; the temperature coefficient is positive. When the temperature rises, the depletion layer decreases. In the depletion layer, the valence electrons of atoms rise to higher energy levels, and a smaller electric field strength can excite valence electrons from the atoms to produce Zener breakdown, so its temperature coefficient is negative. Avalanche breakdown occurs when the depletion layer is wider and the electric field strength is lower. An increase in temperature increases the vibration amplitude of lattice atoms, hindering the movement of carriers. In this case, only by increasing the reverse voltage can avalanche breakdown occur, so the voltage temperature coefficient of avalanche breakdown is positive. For applications with high requirements for the power supply, two Zener diodes with opposite temperature coefficients can be connected in series for compensation. Due to mutual compensation, the temperature coefficient is greatly reduced. 6. Reverse leakage current refers to the leakage current generated by the Zener diode under the specified reverse voltage.

UNICONTROL electrical component principle

A Schottky diode is a metal-semiconductor device made using a noble metal (gold, silver, aluminum, platinum, etc.) A as the anode and an N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at their contact surface. Because there are a large number of electrons in the N-type semiconductor and only a very small number of free electrons in the noble metal, electrons diffuse from the high-concentration B to the low-concentration A. Clearly, there are no holes in the metal A, so there is no diffusion movement of holes from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, destroying surface electrical neutrality, thus forming a barrier whose electric field direction is B→A. However, under the influence of this electric field, electrons in A also produce a drift motion from A→B, thereby weakening the electric field formed by the diffusion motion. After a space charge region of a certain width is established, the electron drift motion caused by the electric field and the electron diffusion motion caused by the concentration difference reach a relative balance, forming the Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses an N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region, improving the withstand voltage of the diode. The N-type substrate has a very small on-state resistance, and its doping concentration is 105% times higher than that of the H-layer. An N+ cathode layer is formed beneath the substrate to reduce the contact resistance of the cathode. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

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