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Vishay Semiconductors electrical components, German Vishay Semiconductors models, Vishay Semiconductors pricing

Vishay Semiconductors electrical components, German Vishay Semiconductors models, Vishay Semiconductors pricing

Vishay Semiconductors electrical components are parts of electronic components and small machines or instruments. They often consist of several parts and are interchangeable within similar products. The term commonly refers to certain parts in the electrical appliance, radio, and instrumentation industries, serving as a general name for electronic devices such as capacitors, transistors, hairsprings, and mainsprings. Common examples include diodes. Electronic components include: resistors, capacitors, inductors, potentiometers, electron tubes, heat sinks, electromechanical components, connectors, discrete semiconductor devices, electroacoustic devices, laser devices, and electronic displays.

SKU
_P004835368
Category
Electrical and Electronic Components
Tags
Connectors / Cable / Germany Vishay Semiconductors / Switch / Relay / Controller
Vishay Semiconductors electrical components are parts of electronic components and small machines or instruments. They often consist of several parts and are interchangeable within similar products. The term commonly refers to certain parts in the electrical appliance, radio, and instrumentation industries, serving as a general name for electronic devices such as capacitors, transistors, hairsprings, and mainsprings. Common examples include diodes. Electronic components include: resistors, capacitors, inductors, potentiometers, electron tubes, heat sinks, electromechanical components, connectors, discrete semiconductor devices, electroacoustic devices, laser devices, electronic display devices, optoelectronic devices, sensors, power supplies, switches, micro-special motors, electronic transformers, relays, printed circuit boards, integrated circuits, various circuits, piezoelectric materials, crystals, quartz, ceramic magnetic materials, substrate bases for printed circuits, special materials for electronic functional processes, electronic adhesive (tape) products, electronic chemical materials, and parts.


Vishay Semiconductors electrical component principles


A DC power supply has two electrodes: positive and negative. The positive electrode has a higher potential, while the negative electrode has a lower potential. When these two electrodes are connected to a circuit, they maintain a constant potential difference between the two ends of the circuit, thereby forming a current from the positive to the negative electrode in the external circuit. Relying solely on the difference in water levels cannot maintain a steady water flow; however, using a pump to continuously move water from a lower level to a higher level maintains a certain water level difference, resulting in a steady flow. Similarly, relying solely on the electrostatic field generated by electric charges cannot maintain a steady current. With a DC power supply, non-electrostatic forces (referred to as "non-electrostatic force") can be used to move positive charges from the negative electrode at a lower potential back to the positive electrode at a higher potential through the interior of the power supply. This maintains the potential difference between the two electrodes, thereby forming a steady current. Therefore, a DC power supply is an energy conversion device that converts other forms of energy into electrical energy to supply the circuit, maintaining the steady flow of current.


Vishay Semiconductors electrical component parameters


The main parameters of a transistor include current amplification factor, power dissipation, frequency characteristics, maximum collector current, maximum reverse voltage, and reverse current. Amplification factor: The DC current amplification factor, also known as the static current amplification factor or DC amplification ratio, refers to the ratio of the transistor's collector current to its base current when there is no changing signal input under static conditions. AC amplification factor: The AC amplification factor, also known as the AC current amplification factor or dynamic current amplification factor, refers to the ratio of the change in the transistor's collector current to the change in its base current under AC conditions. Power dissipation: Power dissipation, also referred to as the maximum allowable collector power dissipation PCM, is the maximum collector power dissipation when the transistor's parameter changes do not exceed the specified allowable values. Power dissipation is closely related to the transistor's maximum allowable junction temperature and maximum collector current. During operation, the actual power consumption of the transistor must not exceed the PCM value; otherwise, the transistor may be damaged due to overload. When the transistor's operating frequency exceeds the cutoff frequency, its current amplification factor decreases as the frequency increases. The maximum oscillation frequency is the frequency at which the transistor's power gain drops to 10. Typically, the maximum oscillation frequency of high-frequency transistors is lower than the common-base cutoff frequency, while the characteristic frequency is higher than the common-base cutoff frequency but lower than the common-collector cutoff frequency. Maximum current: The maximum collector current refers to the maximum current allowed to pass through the transistor's collector. Maximum reverse voltage: The maximum reverse voltage refers to the highest working voltage allowed to be applied to the transistor during operation. It includes the collector-emitter reverse breakdown voltage, collector-base reverse breakdown voltage, and emitter-base reverse breakdown voltage. The collector reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and emitter when the transistor's base is open. The base reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and base when the transistor's emitter is open. The emitter reverse breakdown voltage refers to the maximum allowable reverse voltage between the emitter and base when the transistor's collector is open. The reverse current between the base and collector, also known as the collector junction reverse leakage current, refers to the reverse current between the collector and base when the transistor's emitter is open. The reverse breakdown current between the emitter and collector refers to the reverse leakage current between the collector and emitter when the transistor's base is open, also known as the penetration current. A smaller value of this current indicates better transistor performance.


Vishay Semiconductors electrical component parameters


1. Stable voltage refers to the stable voltage value generated across the terminals of a Zener diode when it passes the rated current. This value varies slightly with operating current and temperature. Due to differences in manufacturing processes, the stabilization voltage of Zener diodes of the same model is not completely identical. 2. Reverse leakage current refers to the current passing through the Zener diode when it generates a stable voltage. Below this value, the Zener diode can still regulate voltage, but the regulation effect will be poorer; above this value, as long as the rated power loss is not exceeded, it is permissible, and the voltage regulation performance will be better, though it will consume more electrical energy. 3. Dynamic resistance refers to the ratio of the change in voltage across the Zener diode to the change in current. This ratio varies with the operating current; generally, the larger the operating current, the smaller the dynamic resistance. 4. Rated power dissipation is determined by the allowable temperature rise of the chip, and its value is the product of the stable voltage and the maximum allowable current. 5. Temperature coefficient: If the temperature of the Zener diode changes, its stable voltage will also undergo slight changes. The relative change in voltage across the tube caused by a temperature change of 1℃ is the temperature coefficient (unit: %/℃). Generally speaking, stabilization voltages below 6V belong to Zener breakdown, where the temperature coefficient is negative; otherwise, the temperature coefficient is positive. As the temperature rises, the depletion layer decreases. In the depletion layer, the valence electrons of atoms rise to higher energy levels, and a smaller electric field strength can excite valence electrons out of the atoms to produce Zener breakdown; therefore, its temperature coefficient is negative. Avalanche breakdown occurs when the depletion layer is wider and the electric field strength is lower. An increase in temperature increases the vibration amplitude of lattice atoms, hindering the movement of carriers. In this case, only by increasing the reverse voltage can avalanche breakdown occur; therefore, the voltage temperature coefficient of avalanche breakdown is positive. For applications with high requirements for power supplies, two Zener diodes with opposite temperature coefficients can be connected in series for compensation. Due to mutual compensation, the temperature coefficient is greatly reduced. 13. Reverse leakage current refers to the leakage current generated by the Zener diode under the specified reverse voltage.



Weidou Intelligent Technology specializes in selling German Vishay Semiconductors connectors, Vishay Semiconductors switches, Vishay Semiconductors relays, Vishay Semiconductors controllers, Vishay Semiconductors plugs, Vishay Semiconductors sensors, Vishay Semiconductors resistors, Vishay Semiconductors capacitors, Vishay Semiconductors buses, Vishay Semiconductors modules, Vishay Semiconductors cables, Vishay Semiconductors power supplies, Vishay Semiconductors interfaces, Vishay Semiconductors gateways, and Vishay Semiconductors circuit breakers. All Vishay Semiconductors products are original imports from Germany. Customers are welcome to inquire and place orders.





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