Vishay Sfernice electrical components German Vishay Sfernice models Vishay Sfernice prices

Vishay Sfernice electrical components are products whose raw material molecular composition is not altered during factory processing, and can be referred to as components. Components belong to devices that do not require an energy source. They include: resistors, capacitors, and inductors. Circuit-type components include diodes and resistors; connection-type components include connectors, sockets, connecting cables, and printed circuit boards (PCB). Devices are products whose raw material molecular structure is altered during factory production and processing. Devices are divided into active devices and discrete devices. The main characteristic of active devices is that they consume small amounts of electrical energy and require an external power supply. Discrete devices are divided into bipolar junction transistors, field-effect transistors, thyristors, semiconductor resistors, and capacitors. shi

Vishay Sfernice electrical component principles

Its operating principle is the same as that of a transformer, with a basic structure consisting of an iron core and primary and secondary windings. It is characterized by a very small and relatively constant capacity, operating close to no-load conditions during normal operation. The impedance of the voltage transformer itself is very small; once a short circuit occurs on the secondary side, the current will increase sharply and burn out the windings. For this reason, fuses are connected to the primary side of the voltage transformer, and the secondary side is reliably grounded to prevent high potential to ground on the secondary side from causing personal injury and equipment accidents when insulation between the primary and secondary sides is damaged. Voltage transformers for measurement are generally made with a single-phase, two-winding structure. The primary voltage is the voltage to be measured (such as the line voltage in a power system). They can be used in single phase, or two units can be connected in a V-V configuration for three-phase use. Voltage transformers used in laboratories often have multiple taps on the primary side to accommodate the need to measure different voltages. Voltage transformers for protective grounding also include a third winding, known as a three-winding voltage transformer. The third windings of the three phases are connected in an open-delta configuration. The two output terminals of the open delta are connected to the voltage coil of the ground protection relay. During normal operation, the three-phase voltages of the power system are symmetrical, and the sum of the three-phase induced electromotive forces on the third winding is zero. Once a single-phase ground fault occurs, neutral point displacement occurs, and zero-sequence voltage appears between the terminals of the open delta, causing the relay to operate and thus protecting the power system. When zero-sequence voltage appears in the windings, corresponding zero-sequence flux appears in the iron core. Therefore, this type of three-phase voltage transformer uses a side-yoke iron core or employs three single-phase voltage transformers. For this type of transformer, the accuracy requirement for the third winding is not high, but it requires certain over-excitation characteristics (i.e., when the primary voltage increases, the flux density in the iron core increases by a corresponding factor without damage). Voltage transformers are indispensable electrical devices in power transmission and supply systems such as power plants and substations. Precision voltage transformers are instruments used in electrical testing laboratories to extend measurement ranges and measure voltage, power, and electrical energy. Voltage transformers are very similar to transformers, as both are used to transform voltage on lines. Why is voltage transformation needed on lines? This is because, depending on the different conditions of power generation, transmission, and consumption, the voltage levels on lines vary significantly, ranging from low voltages such as 220V and 384V to high voltages of tens of thousands or even hundreds of thousands of volts. To directly measure these low and high voltages, corresponding low-voltage and high-voltage voltmeters and other instruments and relays would need to be manufactured according to the line voltage levels. This would not only create significant difficulties in instrument manufacturing, but more importantly, it is impossible and strictly prohibited to directly manufacture high-voltage instruments and measure voltage directly on high-voltage lines.

Vishay Sfernice electrical component principles

The main principle of a diode is to utilize the unidirectional conductivity of the PN junction. Adding leads and encapsulation to the PN junction forms a diode. A crystal diode is a PN junction formed by P-type semiconductor and N-type semiconductor, where a space charge layer is formed on both sides of the interface, establishing a built-in electric field. When there is no external voltage, the diffusion current caused by the carrier concentration difference on both sides of the PN junction and the drift current caused by the built-in electric field are equal, resulting in an electrical equilibrium state. When there is a forward voltage bias from the outside, the mutual cancellation effect of the external electric field and the built-in electric field increases the diffusion current of carriers, causing a forward current. When there is a reverse voltage bias from the outside, the external electric field and the built-in electric field are further strengthened, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the space charge layer of the PN junction reaches a critical value, producing a carrier multiplication process. This generates a large number of electron-hole pairs, resulting in a large reverse breakdown current, known as the diode breakdown phenomenon. Reverse breakdown of the PN junction is divided into Zener breakdown and avalanche breakdown.

Vishay Sfernice electrical component principles

The main principle of a diode is to utilize the unidirectional conductivity of the PN junction. Adding leads and encapsulation to the PN junction forms a diode. A crystal diode is a PN junction formed by P-type semiconductor and N-type semiconductor, where a space charge layer is formed on both sides of the interface, establishing a built-in electric field. When there is no external voltage, the diffusion current caused by the carrier concentration difference on both sides of the PN junction and the drift current caused by the built-in electric field are equal, resulting in an electrical equilibrium state. When there is a forward voltage bias from the outside, the mutual cancellation effect of the external electric field and the built-in electric field increases the diffusion current of carriers, causing a forward current. When there is a reverse voltage bias from the outside, the external electric field and the built-in electric field are further strengthened, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the space charge layer of the PN junction reaches a critical value, producing a carrier multiplication process. This generates a large number of electron-hole pairs, resulting in a large reverse breakdown current, known as the diode breakdown phenomenon. Reverse breakdown of the PN junction is divided into Zener breakdown and avalanche breakdown.

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