2061532.25 in stock German 2061532.25 electrical components 2061532.25 inventory

2061532.25 electrical component is a varactor diode, also known as a "variable reactance diode," manufactured using the characteristic that the junction capacitance of a PN junction under reverse bias varies with the applied voltage. As the reverse bias voltage increases, the junction capacitance decreases; conversely, the junction capacitance increases. The capacitance of a varactor diode is generally small, with a maximum value ranging from tens of pF to hundreds of pF. It is mainly used in high-frequency circuits for automatic tuning, frequency modulation, and phase adjustment, such as serving as a variable capacitor in the tuning circuit of a television receiver. Main parameters include: zero-bias junction capacitance, zero-bias quality factor, reverse breakdown voltage, center reverse bias voltage, nominal capacitance, capacitance variation range (in picofarads), and cutoff frequency.

2061532.25 electrical component parameters

1. Nominal varistor voltage: refers to the voltage value across the varistor when a pulse current of specified duration passes through it. 2. Voltage ratio: refers to the ratio of the voltage generated by the current in the varistor to the voltage generated by the current in the varistor. 3. Maximum clamping voltage: the peak voltage across the varistor when it withstands the maximum peak pulse current Ip under a specified waveform. 4. Residual voltage ratio: when the current passing through the varistor is at a certain value, the voltage generated across it is called the residual voltage for that current value. The residual voltage ratio is the ratio of the residual voltage to the nominal voltage. 5. Surge current capacity: also known as surge current, refers to the maximum pulse current value allowed to pass through the varistor under specified conditions. 6. Leakage current: also known as standby current, refers to the current flowing through the varistor when it is at a specified temperature and under maximum DC voltage. 7. Voltage temperature coefficient: refers to the rate of change of the varistor's nominal voltage within a specified temperature range, i.e., the relative change in voltage across the varistor when the temperature changes while the current passing through it remains constant. 8. Current temperature coefficient: refers to the relative change in the current flowing through the varistor when the temperature changes while the voltage across the varistor remains constant. 9. Voltage nonlinearity coefficient: refers to the ratio of the static resistance to the dynamic resistance of the varistor under a given applied voltage. 10. Insulation resistance: refers to the resistance value between the lead wires of the varistor and the insulating surface of the resistive body. 11. Static capacitance: refers to the inherent capacitance of the varistor itself. 12. Rated power: the maximum power that causes a change in varistor voltage when operating at a specific ambient temperature. 22. Maximum impulse current: the maximum impulse current that causes a change in varistor voltage when the varistor is subjected to a specific pulse current impact once or twice.

2061532.25 electrical component principle

When two different conductors or semiconductors A and B form a loop with their ends connected, as long as the temperatures at the two junctions are different, with one end at temperature T (called the working end or hot end) and the other end at temperature T0 (called the free end or cold end), an electromotive force (EMF) is generated in the loop. The direction and magnitude of this EMF depend on the materials of the conductors and the temperatures of the two junctions. This phenomenon is called the "thermoelectric effect," the loop formed by the two conductors is called a "thermocouple," the two conductors are called "thermoelectrodes," and the generated EMF is called "thermoelectric EMF." The thermoelectric EMF consists of two parts: the contact EMF between the two conductors and the Thomson EMF of a single conductor. The magnitude of the thermoelectric EMF in a thermocouple loop depends only on the conductor materials forming the thermocouple and the temperatures of the two junctions, and is independent of the shape and dimensions of the thermocouple. Once the materials of the two thermocouple electrodes are fixed, the thermoelectric EMF is the functional difference between the temperatures t and t0 of the two junctions. This relationship is widely used in practical temperature measurement. Since the cold end t0 is constant, the thermoelectric EMF generated by the thermocouple changes only with the temperature of the hot end (measurement end), meaning a specific thermoelectric EMF corresponds to a specific temperature. Temperature measurement can be achieved by measuring the thermoelectric EMF. The basic principle of thermocouple temperature measurement is that a closed loop formed by two conductors of different compositions generates a current when there is a temperature gradient between the two ends, resulting in an EMF—thermoelectric EMF—between the ends, known as the Seebeck effect. Two homogeneous conductors of different compositions serve as thermoelectrodes, with the higher-temperature end being the working end and the lower-temperature end being the free end, which is usually maintained at a constant temperature. A thermocouple calibration table is created based on the functional relationship between thermoelectric EMF and temperature; this table is obtained under the condition that the free end temperature is 4°C, and different thermocouples have different calibration tables. When a third metal material is introduced into the thermocouple loop, as long as the temperatures at the two junctions of this material are the same, the thermoelectric EMF generated by the thermocouple remains unchanged, i.e., it is unaffected by the introduction of the third metal. Therefore, during thermocouple temperature measurement, a measuring instrument can be connected to measure the thermoelectric EMF, thereby determining the temperature of the measured medium. Thermocouple temperature measurement requires the temperature of the cold end (the measurement end is the hot end, and the end connected to the measurement circuit via lead wires is called the cold end) to remain constant so that the thermoelectric EMF is proportional to the measured temperature. If the (ambient) temperature of the cold end changes during measurement, it will seriously affect the accuracy of the measurement. Taking measures at the cold end to compensate for the effects of temperature changes is called thermocouple cold junction compensation. Special compensation cables are used to connect to the measuring instrument. Thermocouple cold junction compensation calculation methods: (1) From millivolts to temperature: measure the cold end temperature, convert it to the corresponding millivolt value, add it to the thermocouple's millivolt value, and convert to temperature; (2) From temperature to millivolts: measure the actual temperature and the cold end temperature, convert them separately to millivolt values, subtract to obtain the millivolt value, and thus determine the temperature.

2061532.25 electrical component principle

A crystal diode consists of a p-n junction formed by p-type semiconductor and n-type semiconductor. A space charge layer is formed on both sides of the interface, establishing a built-in electric field. When no external voltage is applied, the diode is in electrical equilibrium because the diffusion current caused by the carrier concentration difference across the p-n junction equals the drift current caused by the built-in electric field. When a forward bias voltage is applied externally, the mutual cancellation of the external electric field and the built-in electric field increases the diffusion current of carriers, causing a forward current. When a reverse bias voltage is applied externally, the external electric field and the built-in electric field are further strengthened, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the space charge layer of the p-n junction reaches a critical value, causing a carrier multiplication process that generates a large number of electron-hole pairs, resulting in a large reverse breakdown current, known as the diode breakdown phenomenon.

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