TETM26-35C in stock. German TETM26-35C electrical components. TETM26-35C inventory.

TETM26-35C electrical components include resistors, capacitors, inductors, diodes, transistors, field-effect transistors, thyristors, transformers, relays, sensors, etc.; electronic devices include analog circuits (operational amplifiers, comparators, signal conditioners), logic circuits (flip-flops, counters, decoders, registers, transceivers, NOT gates, AND gates, OR gates, NAND gates, NOR gates, XOR gates), microcontrollers, memory, digital potentiometers, signal conversion circuits (A/D converters, D/A converters, voltage-to-frequency converters), communication circuits (various interface circuits), monitoring and reset circuits (power supply monitoring, program monitoring), and many more.

TETM26-35C electrical component principles

A crystal diode is a p-n junction formed by p-type semiconductor and n-type semiconductor. A space charge layer is formed on both sides of the interface, establishing a built-in electric field. When no external voltage is applied, the diffusion current caused by the carrier concentration difference across the p-n junction equals the drift current caused by the built-in electric field, resulting in electrical equilibrium. When a forward bias voltage is applied externally, the mutual cancellation between the external electric field and the built-in electric field increases the carrier diffusion current, causing a forward current. When a reverse bias voltage is applied externally, the external electric field further strengthens the built-in electric field, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the space charge layer of the p-n junction reaches a critical value, triggering a carrier multiplication process that generates a large number of electron-hole pairs, resulting in a significant reverse breakdown current, known as the diode breakdown phenomenon.

TETM26-35C electrical component principles

A photodiode is a semiconductor device that converts optical signals into electrical signals. Its core part is also a PN junction. Compared with ordinary diodes, the structural difference is that the PN junction area is made as large as possible to facilitate the reception of incident light, the electrode area is made as small as possible, and the junction depth of the PN junction is very shallow, generally less than 5 micrometers. Photodiodes operate under reverse voltage. Without illumination, the reverse current is very small, called dark current. When illuminated, photons carrying energy enter the PN junction and transfer energy to bound electrons in covalent bonds, causing some electrons to break free from the covalent bonds, thereby generating electron-hole pairs, known as photo-generated carriers. Under the action of reverse voltage, they participate in drift motion, significantly increasing the reverse current; the greater the light intensity, the larger the reverse current. This characteristic is called "photoconductivity." The current generated by a photodiode under normal illumination is called photocurrent. If a load is connected in the external circuit, the load receives an electrical signal, and this electrical signal changes correspondingly with changes in light. Photodiodes are widely used photosensitive devices in electronic circuits. Like ordinary diodes, photodiodes have a PN junction. The difference is that the photodiode housing has a transparent window to receive light irradiation for photoelectric conversion. In circuit diagrams, the text symbol is generally VD.

TETM26-35C electrical component classification

Thyristors have multiple classification methods: (1) Classification by turn-off, turn-on, and control methods: Thyristors can be divided into conventional thyristors, bidirectional thyristors, reverse-conducting thyristors, gate turn-off thyristors, BTG thyristors, temperature-controlled thyristors, and light-controlled thyristors based on their turn-off, turn-on, and control methods. (2) Classification by pins and polarity: Thyristors can be divided into two-pin thyristors, three-pin thyristors, and four-pin thyristors based on their pins and polarity. (3) Classification by package type: Thyristors can be divided into metal-packaged thyristors, plastic-packaged thyristors, and ceramic-packaged thyristors based on their package types. Among them, metal-packaged thyristors are further divided into bolt-type, flat-type, round-case type, etc.; plastic-packaged thyristors are divided into types with heat sinks and types without heat sinks. (4) Classification by current capacity: Thyristors can be divided into high-power thyristors, medium-power thyristors, and low-power thyristors based on current capacity. Typically, high-power thyristors mostly use metal case packaging, while medium and low-power thyristors mostly use plastic or ceramic packaging. (5) Classification by turn-off speed: Thyristors can be divided into conventional thyristors and high-frequency (fast) thyristors based on their turn-off speed. (6) Zero-crossing trigger - generally for power regulation, i.e., triggering when the phase of the sinusoidal AC voltage crosses zero. Triggering must occur at the zero-crossing point to conduct the thyristor. (7) Non-zero-crossing trigger - The thyristor can be triggered to conduct regardless of the phase of the AC voltage. Commonly, this is phase-shift triggering, i.e., changing the output percentage by altering the conduction angle (phase angle) of the sinusoidal AC voltage.

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