SQB1 in stock German SQB1 electrical components SQB1 inventory

SQB1 electrical component is a new type of contactless switching device composed entirely of solid-state electronic components. It utilizes the switching characteristics of electronic components (such as switching transistors, triacs, and other semiconductor devices) to achieve contactless, spark-free circuit connection and disconnection, hence it is also known as a "contactless switch." A solid-state relay is a four-terminal active device, where two terminals are input control terminals and the other two are output controlled terminals. It has both amplification drive and isolation functions, making it very suitable for driving high-power switching actuators. Compared to electromagnetic relays, it offers higher reliability, is contactless, has a long service life, fast speed, and low external interference, and has been widely used [1].

SQB1 electrical component parameters

1. Nominal varistor voltage: refers to the voltage value across the varistor when a pulse current of specified duration passes through. 2. Voltage ratio: refers to the ratio of the voltage value generated by the current in the varistor to the voltage value generated by the current in the varistor. 3. Maximum limiting voltage: the peak voltage across the varistor under the maximum pulse peak current Ip that the varistor can withstand and under the specified waveform. 4. Residual voltage ratio: when the current passing through the varistor is a certain value, the voltage generated across it is called the residual voltage for that current value. The residual voltage ratio is the ratio of residual voltage to nominal voltage. 5. Surge current capacity: also known as surge current, refers to the maximum pulse current value allowed to pass through the varistor under specified conditions. 6. Leakage current: also known as standby current, refers to the current flowing through the varistor at the specified temperature and maximum DC voltage. 7. Voltage temperature coefficient: refers to the rate of change of the nominal voltage of the varistor within the specified temperature range, i.e., the relative change in voltage across the varistor when the temperature changes while the current passing through the varistor remains constant. 8. Current temperature coefficient: refers to the relative change in current flowing through the varistor when the temperature changes while the voltage across the varistor remains constant. 9. Voltage nonlinearity coefficient: refers to the ratio of static resistance to dynamic resistance of the varistor under a given applied voltage. 10. Insulation resistance: refers to the resistance value between the lead wires of the varistor and the insulated surface of the resistor body. 11. Static capacitance: refers to the inherent capacitance of the varistor itself. 12. Rated power: the maximum power that causes a change in varistor voltage when operating at a specific ambient temperature. 21. Maximum impulse current: the maximum impulse current that causes a change in varistor voltage when the varistor is subjected to a specific pulse current impulse once or twice.

SQB1 electrical component principle

1. Emitter emits electrons to the base region: The power supply Ub is applied to the emitter junction via resistor Rb, forward-biasing the emitter junction. The majority carriers (free electrons) in the emitter region continuously cross the emitter junction into the base region, forming the emitter current Ie. At the same time, majority carriers in the base region also diffuse towards the emitter region, but since their concentration is much lower than that of the emitter region carriers, this current can be neglected; thus, the emitter junction current is primarily considered as electron flow. 2. Diffusion and recombination of electrons in the base region: After entering the base region, electrons first accumulate near the emitter junction, gradually forming an electron concentration gradient. Under the influence of this gradient, electron flow diffuses through the base region towards the collector junction and is pulled into the collector region by the collector junction electric field, forming the collector current Ic. A very small portion of electrons (due to the thin base region) recombine with holes in the base region; the ratio of diffused electron flow to recombined electron flow determines the amplification capability of the transistor. 3. Collector region collects electrons: Due to the large reverse voltage applied externally to the collector junction, the electric field force generated by this reverse voltage prevents electrons in the collector region from diffusing into the base region, while simultaneously pulling electrons diffused near the collector junction into the collector region, thereby forming the main collector current Icn. Additionally, minority carriers (holes) in the collector region undergo drift motion, flowing towards the base region to form the reverse saturation current, denoted by Icbo, which has a very small magnitude but is extremely sensitive to temperature.

SQB1 electrical component performance

1. Protection characteristics: When the impact strength of the surge source does not exceed the specified value, the limiting voltage of the varistor must not exceed the impulse withstand voltage that the protected object can endure. 2. Surge withstand characteristics: The varistor itself must be able to withstand the specified surge current, surge energy, and average power during successive multiple surges. 3. Life characteristics include two aspects: one is the continuous operating voltage life, meaning the varistor should reliably operate for a specified time (in hours) under specified ambient temperature and system voltage conditions; the other is the surge life, meaning it can reliably withstand the specified number of surges. 10. After the varistor is integrated into the system, in addition to its "safety valve" protection role, it introduces some additional effects, known as "secondary effects," which should not degrade the normal operating performance of the system. The main factors to consider are three: first, the inherent capacitance of the varistor; second, the leakage current under system voltage; and third, the influence of the varistor's nonlinear current coupling through source impedance on other circuits.

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