SFL125 in stock. German SFL125 electrical components. SFL125 inventory.

SFL125 electrical components are common light-emitting devices that emit light by releasing energy through electron-hole recombination, and they are widely used in the lighting field. Light-emitting diodes can efficiently convert electrical energy into light energy and have extensive applications in modern society, such as in lighting, flat-panel displays, and medical devices. This electronic component appeared as early as 1962, initially only emitting low-intensity red light. Later, versions emitting other monochromatic lights were developed, covering visible light, infrared, and ultraviolet spectra, with significantly increased luminous intensity. Its applications have also evolved from initially serving as indicator lights and display panels; light-emitting diodes are abbreviated as LED. They are made from compounds containing gallium, arsenic, phosphorus, nitrogen, etc. When electrons and holes recombine, they radiate visible light, making them suitable for manufacturing light-emitting diodes. They serve as indicator lights in circuits and instruments, or form character and numeric displays. Gallium arsenide diodes emit red light, gallium phosphide diodes emit green light, silicon carbide diodes emit yellow light, and gallium nitride diodes emit blue light. Based on chemical properties, they are divided into organic light-emitting diodes (OLED) and inorganic light-emitting diodes (LED). LED was initially used for indicative lighting in instruments and meters, later expanding to traffic signals, landscape lighting, automotive lighting, and mobile phone keypads and backlights. Later, new technology for micro-LEDs (micro-LED) was developed, significantly reducing the size of traditional light-emitting diodes. Arrays of independently emitting red, blue, and green micro-LEDs form display arrays for display technology applications. Micro-LEDs feature self-emissive display characteristics, offering higher efficiency, longer lifespan, and greater stability against environmental influences compared to self-emissive organic light-emitting diodes.

SFL125 Electrical Component Classification

Thyristors have various classification methods: (1) Classification by turn-off, turn-on, and control methods: Thyristors can be divided into conventional thyristors, bidirectional thyristors, reverse-conducting thyristors, gate turn-off thyristors, BTG thyristors, temperature-controlled thyristors, and light-controlled thyristors, among others. (2) Classification by pins and polarity: Thyristors can be divided into two-pin thyristors, three-pin thyristors, and four-pin thyristors based on their pins and polarity. (3) Classification by package type: Thyristors can be divided into three types based on their package: metal-packaged thyristors, plastic-packaged thyristors, and ceramic-packaged thyristors. Metal-packaged thyristors are further divided into bolt-type, flat-type, and round-case types, among others; plastic-packaged thyristors are divided into types with heat sinks and without heat sinks. (4) Classification by current capacity: Thyristors can be divided into high-power, medium-power, and low-power thyristors based on current capacity. Typically, high-power thyristors mostly use metal casing packages, while medium- and low-power thyristors mostly use plastic or ceramic packages. (5) Classification by turn-off speed: Thyristors can be divided into conventional thyristors and high-frequency (fast) thyristors based on their turn-off speed. (6) Zero-crossing triggering - generally for power regulation, meaning triggering occurs when the phase of the sinusoidal AC voltage crosses zero; triggering must occur at the zero-crossing point to conduct the thyristor. (7) Non-zero-crossing triggering - the thyristor can be triggered to conduct regardless of the AC voltage phase; common method is phase-shift triggering, which changes the output percentage by altering the conduction angle (phase angle) of the sinusoidal AC current.

SFL125 Electrical Component Characteristics

The most important characteristic of a diode is its unidirectional conductivity. In a circuit, current can only flow into the anode and out of the cathode of the diode. 1. Forward characteristics: In an electronic circuit, when the anode of the diode is connected to a high potential terminal and the cathode to a low potential terminal, the diode conducts. This connection method is called forward bias. It must be noted that when the forward voltage applied across the diode is very small, the diode still does not conduct, and the forward current flowing through it is extremely weak. Only when the forward voltage reaches a certain value can the diode truly conduct. After conduction, the voltage across the diode remains basically constant, known as the "forward voltage drop" of the diode. 10. Reverse characteristics In an electronic circuit, when the anode of the diode is connected to a low potential terminal and the cathode to a high potential terminal, almost no current flows through the diode, placing it in a cutoff state. This connection method is called reverse bias. When the diode is reverse-biased, a weak reverse current, known as leakage current, still flows through it. When the reverse voltage across the diode increases to a certain value, the reverse current increases sharply, causing the diode to lose its unidirectional conductivity. This state is called diode breakdown. The injection current of a laser diode must exceed the critical current density to satisfy the population inversion condition and emit laser light. The critical current density is related to the junction temperature and indirectly affects efficiency. During high-temperature operation, the critical current increases, efficiency decreases, and components may even be damaged.

SFL125 Electrical Component Characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually referred to as the turn-on voltage of the diode, at which point the diode is in a fully conducting state, and this voltage is usually called the conduction voltage of the diode. For germanium diodes, when a reverse voltage is applied, the current is extremely small when the voltage value is low, and its value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, known as reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values of different diode models vary greatly, ranging from tens of volts to thousands of volts. (2) Forward characteristics: When an external forward voltage is applied, in the initial part of the forward characteristics, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This region is called the dead zone. The forward voltage that cannot cause the diode to conduct is called the dead-zone voltage. When the forward voltage is greater than the dead-zone voltage, the electric field within the PN junction is overcome, and the diode conducts in the forward direction, with the current rising rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant; this voltage is called the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction. This is called the threshold voltage or knee voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current flowing through the diode is a reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in a cutoff state. This reverse current is also called reverse saturation current or leakage current. The reverse saturation current of a diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, while that of low-power germanium tubes is in the order of μA. As the temperature rises, semiconductors are thermally excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the reverse breakdown voltage of the diode. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, its unidirectional conductivity may not be permanently destroyed, and its performance can recover after the external voltage is removed; otherwise, the diode is damaged. Therefore, excessively high reverse voltage applied to the diode should be avoided during use. Reverse breakdown is mechanistically divided into Zener breakdown and avalanche breakdown. In cases of high doping concentration, because the barrier region width is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, freeing valence electrons from covalent bonds and generating electron-hole pairs, causing a sharp increase in current. This breakdown is called Zener breakdown. If the doping concentration is lower and the barrier region width is wider, Zener breakdown is less likely to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current. This breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode at ambient temperature and under the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one-degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper frequency limit for diode operation. Since the diode, like the PN junction, has a junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. (9) Maximum rectified current: The maximum rectified current refers to the maximum allowable average forward current value when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions, among other factors. Because current passing through the tube causes the core to heat up and the temperature to rise, exceeding the permissible limit will cause the core to overheat and become damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed its maximum rectified current value during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe operation, a maximum reverse working voltage value is specified.

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