ATAS electrical components German ATAS models ATAS prices

ATAS electrical component is a transducer that converts a changing magnetic field into a change in output voltage. Hall sensors are primarily used to measure magnetic fields, and can also measure physical quantities that generate and affect magnetic fields, such as those used in proximity switches, Hall effect devices, position measurement, speed measurement, and current measurement equipment. In its simplest form, the sensor acts as an analog transducer, directly returning a voltage. In a known magnetic field, its distance from the Hall plate can be set. Using multiple sensors, the relative position of the magnet can be inferred. The current through a conductor generates a magnetic field that varies with the current, and Hall effect sensors can measure current without interfering with it. A typical construction integrates the sensor with a wound magnetic core or a permanent magnet next to the conductor being measured. Typically, Hall effect sensors are connected to circuits, allowing the device to operate in digital (on/off) mode, in which case it can be referred to as a switch. Common industrial equipment, such as cylinders, are also used in everyday devices; for example, some printers use them to monitor paper absence and open covers. When high reliability is required for keyboards, Hall sensors are also designed into their keys. Hall effect sensors are commonly used to measure wheel and axle speeds, such as in internal combustion engine ignition timing or tachometers. They are used in brushless DC motors to detect the position of permanent magnets. A wheel equipped with two equidistant magnets will cause the voltage on the sensor to peak twice per cycle; this setup is commonly used to calibrate the speed of disk drives.

ATAS electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metal materials can include aluminum, gold, molybdenum, nickel, and titanium, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N-type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without causing excessive series resistance, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is well known, there are a large number of conductive electrons inside metal conductors. When metal contacts a semiconductor (with a separation on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the energy levels corresponding to the conduction band of the semiconductor within the metal, the electron density is lower than the electron density in the semiconductor's conduction band. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, the negative charge is distributed only within a surface layer of atomic thickness. For N-type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a greater thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region toward the metal. As thermionic emission increases the built-in field, the drift current, which is opposite to the diffusion current, increases, eventually reaching dynamic equilibrium and forming a contact barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (i.e., positive voltage to the metal, negative voltage to the semiconductor), the built-in field is weakened, the barrier on the semiconductor side is lowered, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field is strengthened, the barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, like SBD and PN junction diodes, it is a nonlinear device with unidirectional conductivity.

ATAS electrical component characteristics

(1) has a wide transient response range and strong harmonic measurement capability. The quality of transient characteristics is an important parameter for determining whether a transformer can be applied in power systems, particularly in coordination with relay protection operation times. Traditional electromagnetic transformers have poor response characteristics to high-frequency signals due to the presence of an iron core and cannot correctly reflect the transient process on the primary side. In contrast, the frequency range of optical current transformers is mainly determined by the electronic circuitry, avoiding iron core saturation issues, thus accurately reflecting the transient process on the primary side. The structure of optical sensors allows for the measurement of harmonics on high-voltage power lines, which is difficult to achieve with electromagnetic induction transformers. (2) digital interface provides strong communication capabilities. Since optical sensors transmit optical digital signals, they interface easily with communication networks without measurement errors during transmission. With the widespread adoption of microprocessor-based protection and control equipment, optical current transformers can directly provide digital quantities to secondary equipment, eliminating the need for converters and A/D sampling sections in original protection devices, greatly simplifying secondary equipment and promoting research into new protection principles. (3) Small size, light weight, and easy upgradability meet the requirements for miniaturized and compact substations. Since optical sensors rely on sensing heads and electronic circuits for signal acquisition and processing, they are compact, with weights generally below 1004 kg, facilitating integration into AIS or GIS, thereby significantly reducing the footprint of substations and meeting miniaturization and compactness requirements. Additionally, optical current transformers connect to secondary equipment via a small number of optical fibers, greatly reducing the need for cable trenches and cables.

ATAS electrical component applications

Light-emitting diodes are widely used in many fields. The following outlines their main applications: (1) Applications in consumer electronics: In consumer electronics, light-emitting diodes are generally used as backlight sources for screens or for display and lighting purposes. From large LCD TVs and computer monitors to media players MP3, MP4, and mobile phones, light-emitting diodes are used as screen backlights. (2) Applications in automobiles and heavy machinery: Light-emitting diodes are extensively used in automobiles and heavy machinery. Turn signals, interior lighting, instrument panel lighting, headlights, indicator lights, brake lights, and tail lights in automobiles and heavy mechanical equipment all utilize light-emitting diodes. This is mainly because light-emitting diodes offer fast response times and long service life (the lifespan of a light-emitting diode is generally longer than that of the automobile or heavy machinery itself). (3) Applications in coal mines: Due to characteristics such as high efficiency, low energy consumption, long lifespan, and high luminous intensity compared to conventional light-emitting devices, light-emitting diodes are used in miners' lamps and underground lighting equipment. Although not yet fully widespread, they will soon see extensive adoption, and light-emitting diodes will replace conventional light-emitting devices in coal mining applications. (9) Urban decorative lighting: In today's bustling commercial era, neon lights are an important symbol of urban vibrancy, but they have many drawbacks, such as insufficient lifespan. Therefore, replacing neon lights with light-emitting diodes offers many advantages. Compared to neon lights, light-emitting diodes not only have a longer lifespan but also provide energy savings, simple drive and control requirements, and maintenance-free operation. The replacement of neon lights by light-emitting diodes is an inevitable trend in the development of lighting equipment.

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