BETTERMANN electrical components Germany BETTERMANN model BETTERMANN price

BETTERMANN electrical components are Zener diodes manufactured by utilizing the reverse breakdown state of the PN junction, a phenomenon where current can vary over a wide range while voltage remains essentially constant. This diode is a semiconductor device with very high resistance up to the critical reverse breakdown voltage. At this critical breakdown point, the reverse resistance drops to a very low value; in this low-resistance region, current increases while voltage remains constant. Zener diodes are graded according to their breakdown voltage. Due to this characteristic, Zener diodes are primarily used as voltage regulators or voltage reference elements. Zener diodes can be connected in series for use at higher voltages, allowing for higher stable voltages through series connection.

BETTERMANN electrical component classification

Cables include power cables, control cables, compensation cables, shielded cables, high-temperature cables, computer cables, signal cables, coaxial cables, fire-resistant cables, marine cables, mining cables, aluminum alloy cables, and more. They are all composed of single-strand or multi-strand conductors and insulation layers, used to connect circuits, electrical appliances, etc. Cables can be divided into DC cables and AC cables according to the photovoltaic power station system, and are classified into DC cables and AC cables based on application and operating environment.

BETTERMANN electrical component composition

Transformer components include the core assembly (core, windings, insulation, leads), transformer oil, tank and cooling devices, voltage regulation devices, protection devices (breathers, safety air vents, gas relays, oil conservators, and temperature measuring devices, etc.), and output bushings. Specific composition and functions: (1) The core is the main magnetic circuit part of the transformer. It is usually made of stacked hot-rolled or cold-rolled silicon steel sheets with high silicon content and surfaces coated with insulating varnish. The core is divided into two parts: the core column and the yoke. The core column is fitted with windings; the yoke is used to close the magnetic circuit. (2) The winding is the circuit part of the transformer, wound using double-silk-insulated flat wire or enamel-coated round wire. The basic principle of a transformer is electromagnetic induction. Taking a single-phase two-winding transformer as an example to explain its basic working principle: when voltage is applied to the primary winding, current flows, generating alternating magnetic flux in the core. This flux is called the main flux. Under its influence, electromotive forces are induced in the windings on both sides, ultimately driving the transformer control devices.

BETTERMANN electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to the diode, the current is extremely small when the voltage value is low. When the voltage exceeds a certain value, the current begins to increase exponentially. This is usually referred to as the diode's turn-on voltage. The diode is in a fully conductive state, and this voltage is usually called the diode's conduction voltage. For germanium diodes, when a reverse voltage is applied, the current is extremely small when the voltage value is low; this current value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, known as reverse breakdown, and this voltage is called the diode's reverse breakdown voltage. The breakdown voltage values of different diode models vary greatly, ranging from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristic, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This section is called the dead zone. The forward voltage that cannot cause the diode to conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, and the diode conducts in the forward direction, with current rising rapidly as voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant; this voltage is called the diode's forward voltage. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction. This is called the threshold voltage or knee voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current flowing through the diode is the reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called the reverse saturation current or leakage current. The reverse saturation current of a diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, and that of low-power germanium tubes is in the order of μA. As temperature rises, semiconductors are thermally excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity is not necessarily permanently destroyed; after removing the applied voltage, its performance can still recover; otherwise, the diode is damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into two types based on mechanism: Zener breakdown and avalanche breakdown. In cases of high doping concentration, because the barrier region width is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, freeing valence electrons from covalent bond constraints and generating electron-hole pairs, causing the current to increase sharply. This breakdown is called Zener breakdown. If the doping concentration is lower, the barrier region width is wider, and Zener breakdown is less likely to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current. This breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode when it is subjected to ambient temperature and the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper frequency limit for diode operation. Since the diode, like the PN junction, has junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, unidirectional conductivity will be affected. (9) Maximum rectified current: Maximum rectified current refers to the maximum allowable forward average current value when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the chip to heat up and the temperature to rise, exceeding the permissible limit will cause the chip to overheat and become damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed its maximum rectified current value during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe operation, a maximum reverse working voltage value is specified.

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