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brandenburger electrical components are electronic devices made from semiconductor materials (silicon, selenium, germanium, etc.). A diode has two electrodes: the positive electrode, also called the anode; and the negative electrode, also called the cathode. When a forward voltage is applied across the two poles of the diode, the diode conducts; when a reverse voltage is applied, the diode cuts off. The conduction and cutoff of the diode are equivalent to the closing and opening of a switch. The diode has unidirectional conductivity; when conducting, the current flows from the anode through the tube to the cathode. The diode is one of the earliest semiconductor devices, and its application is very extensive. Especially in various electronic circuits, reasonable connections using diodes and components such as resistors, capacitors, and inductors form circuits with different functions, achieving functions such as AC rectification, demodulation of modulated signals, limiting and clamping, and voltage stabilization of power supply voltage.

brandenburger electrical component applications

Thermistors can also be used as electronic circuit components for temperature compensation in instrument circuits and cold junction temperature compensation for thermocouples. Utilizing the self-heating characteristics of NTC thermistors enables automatic gain control, forming RC oscillator amplitude stabilization circuits, delay circuits, and protection circuits. When the self-heating temperature is far greater than the ambient temperature, the resistance value is also related to the heat dissipation conditions of the environment; therefore, this characteristic of thermistors is often utilized in flow meters, gas analyzers, and thermal conductivity analysis to create specialized detection elements. PTC thermistors are mainly used for overheat protection of electrical equipment, contactless relays, constant temperature control, automatic gain control, motor starting, time delay, automatic degaussing of color TVs, fire alarms, and temperature compensation. Main disadvantages: (1) the relationship between resistance value and temperature is severely nonlinear; (2) poor consistency and interchangeability of components; (3) components are prone to aging and have poor stability; (4) except for special high-temperature thermistors, the vast majority of thermistors are only suitable for the 0～158℃ range, which must be noted during use.

brandenburger electrical component principle

A Schottky diode is a metal-semiconductor device made by using noble metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at the contact surface between the two. Because there are a large number of electrons in the N-type semiconductor and only a very small number of free electrons in the noble metal, electrons diffuse from the high-concentration B to the low-concentration A. Obviously, there are no holes in the metal A, so there is no diffusion movement of holes from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, destroying surface electrical neutrality, thus forming a barrier whose electric field direction is B→A. However, under the action of this electric field, electrons in A also produce a drift motion from A→B, thereby weakening the electric field formed by the diffusion motion. After establishing a space charge region of a certain width, the electron drift motion caused by the electric field and the electron diffusion motion caused by the concentration difference reach a relative balance, forming the Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region, increasing the withstand voltage of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 102% times higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

brandenburger electrical component principle

When the voltage applied to the varistor is lower than its threshold, the current flowing through it is extremely small, equivalent to a resistor with infinite resistance. That is to say, when the voltage applied to it is lower than its threshold, it is equivalent to a switch in the open state. When the voltage applied to the varistor exceeds its threshold, the current flowing through it surges, equivalent to a resistor with infinitesimal resistance. That is to say, when the voltage applied to it is higher than its threshold, it is equivalent to a switch in the closed state. Protection principle of surge absorbers: In the standby state, the varistor has very high impedance (several megaohms) relative to the protected electronic components and does not affect the characteristics of the original design circuit. However, when an instantaneous surge voltage appears (exceeding the breakdown voltage of the surge absorber), the impedance of the surge absorber becomes low (only a few ohms) and causes a short circuit in the line, thereby protecting electronic products or more expensive components.

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