brita electrical components Germany brita model brita price

brita electrical components are indispensable measuring instruments in departments such as power electronics, generally with the main purpose of measuring voltage, current, and resistance. Multimeters are divided into pointer multimeters and digital multimeters according to the display method. It is a multi-function, multi-range measuring instrument. General multimeters can measure DC current, DC voltage, AC current, AC voltage, resistance, and audio levels, etc. Some can also measure AC current, capacitance, inductance, and some semiconductor parameters (such as β), etc. A multimeter is a magnetoelectric instrument with a rectifier that can measure various electrical parameters such as AC/DC current, voltage, and resistance. For each electrical quantity, there are generally several ranges. Also known as a multi-meter or simply multi-meter. A multimeter consists of a magnetoelectric ammeter (meter head), measuring circuit, and selector switch, etc. Through the switching of the selector switch, various electrical parameters can be conveniently measured. The main basis for its circuit calculation is Ohm's law for closed circuits. There are many types of multimeters, and they should be selected according to different requirements during use.

brita electrical component principle

When a high-frequency current passes through a conductor, an electric field and a magnetic field are generated in the surrounding space. According to the distribution characteristics of the electromagnetic field in space, it can be divided into the near zone, intermediate zone, and far zone. Let R be the distance from a point in space to the conductor. The region where R ﹤﹤ λ/2π is called the near zone. In this zone, the electromagnetic field is closely related to the current and voltage in the conductor. The region where R﹥﹥λ/2π is called the far zone. In this region, the electromagnetic field can leave the conductor and propagate into space. Its change lags behind the current and voltage on the conductor for a period of time. At this time, the propagated electromagnetic wave is no longer directly related to the current and voltage on the wire. The electromagnetic field in this region is called the radiation field. It must be pointed out that when the length of the wire L is much smaller than the wavelength λ, the radiation is very weak; when the length of the wire L increases to be comparable to the wavelength, the current on the wire will increase greatly, thus forming stronger radiation. Transmitting antennas utilize this nature of the radiation field, enabling the transmitted signal to fully radiate into space after passing through the transmitting antenna. How to make the conductor an effective radiating system? Here we first analyze the situation on the transmission line. On a parallel two-wire transmission line, to ensure only energy transmission without radiation, it is necessary to ensure the symmetry of the two-wire structure, with the current magnitude at corresponding points on the lines being equal and opposite in direction, and the distance between the two lines<π. To effectively radiate the electromagnetic field, this symmetry of the transmission line must be broken. For example, separating the two conductors at a certain angle or removing one side can break the conductor symmetry and produce radiation. Separating the open-circuit transmission line or the conductor at a distance of π/4 from the terminal into a straight shape, the current on the terminal conductor is no longer in anti-phase but in phase, causing the radiation fields of this conductor segment at spatial points to superimpose in phase, constituting an effective radiation system. This is the simplest and most basic unit antenna, called a half-wave symmetric dipole antenna, with a characteristic impedance of 79Ω. After electromagnetic waves are radiated from the transmitting antenna, they propagate in all directions. If a symmetric dipole is placed in the direction of electromagnetic wave propagation, an induced electromotive force will be generated on the antenna dipole under the action of the electromagnetic wave. If the antenna is connected to receiving equipment at this time, a high-frequency current will be generated at the input end of the receiving equipment. In this way, the antenna plays a receiving role and converts electromagnetic waves into high-frequency current, meaning the antenna acts as a receiving antenna. The quality of reception depends not only on the strength of the radio wave but also on the directivity of the antenna and the matching between the half-wave symmetric dipole and the receiving equipment.

brita electrical component characteristics

① Volt-ampere characteristic: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually called the turn-on voltage of the diode. The diode is in a fully conducting state, and this voltage is usually called the conduction voltage of the diode. For germanium diodes, when a reverse voltage is applied to the diode, the current is extremely small when the voltage value is low, and its current value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current begins to increase sharply, which is called reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values of different diode models vary greatly, from tens of volts to thousands of volts. ② Forward characteristic: When an external forward voltage is applied, in the initial part of the forward characteristic, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction. The forward current is almost zero. This section is called the dead zone. This forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, the diode conducts forward, and the current rises rapidly with increasing voltage. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant. This voltage is called the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts forward. This is called the threshold voltage or threshold voltage. ③ Reverse characteristic: When the applied reverse voltage does not exceed a certain range, the current through the diode is the reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called reverse saturation current or leakage current. The reverse saturation current of the diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, and that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is heated and excited, the number of minority carriers increases, and the reverse saturation current also increases. ④ Breakdown characteristic: When the applied reverse voltage exceeds a certain value, the reverse current will suddenly increase. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity will not necessarily be permanently destroyed. After removing the applied voltage, its performance can still recover; otherwise, the diode will be damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into Zener breakdown and avalanche breakdown according to the mechanism. In the case of high doping concentration, because the width of the barrier region is very small, when the reverse voltage is large, the covalent bond structure in the barrier region is destroyed, causing valence electrons to break free from covalent bond constraints, generating electron-hole pairs, resulting in a sharp increase in current. This breakdown is called Zener breakdown. If the doping concentration is low, the barrier region width is wide, and Zener breakdown is not easy to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche increase in carriers, resulting in a sharp increase in current. This breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. ⑤ Reverse current: Reverse current refers to the current flowing through the diode when the diode is at room temperature and under the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature, doubling the reverse current. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. ⑥ Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. ⑦ Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. ⑧ Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Since the diode, like the PN junction, has junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. ⑨ Maximum rectified current: The maximum rectified current refers to the maximum allowable forward average current value when the diode operates continuously for a long time. Its value is related to the PN junction area and external heat dissipation conditions, etc. Because current passing through the tube causes the core to heat up and the temperature to rise, exceeding the allowable limit will cause the core to overheat and be damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed the maximum rectified current value during use.⑩ Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe use, the maximum reverse working voltage value is specified.

brita electrical component advantages

Components do not consume material. No matter how excellent the electron tube is, it will gradually deteriorate due to changes in cathode atoms and chronic air leakage. Due to technical reasons, transistors had the same problem at the beginning of their manufacture. They consume very little electrical energy, only one-tenth or one-hundredth of that of electron tubes. Unlike electron tubes, they do not need to heat filaments to generate free electrons. A transistor radio can run for half a year or a year on just a few dry cells, which is difficult to achieve for electron tube radios. No preheating is required; it works as soon as it is turned on. For example, a transistor radio sounds as soon as it is turned on, and a transistor TV displays images quickly after being turned on. Electron tube equipment cannot achieve this. After turning on, you have to wait a while to hear sound and see images. Obviously, transistors have significant advantages in military, measurement, recording, and other aspects. They are sturdy and reliable, resistant to impact and vibration, which electron tubes cannot match. In addition, the volume of transistors is only one-tenth to one-hundredth of that of electron tubes, and they generate very little heat, making them suitable for designing small, complex, and reliable circuits. Although the manufacturing process of transistors is precise, the procedures are simple, which is conducive to improving the installation density of components.

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