Buerklin OHG electrical components Germany Buerklin OHG models Buerklin OHG prices

Buerklin OHG electrical components are among the earliest devices for amplifying electrical signals. The cathode electron emission section, control grid, accelerating grid, and anode (plate) leads, enclosed in a glass container (typically a glass tube), are welded to the tube base. An electric field is used to inject electrons into the control grid in a vacuum to modulate the signal, and different parameter signal data resulting from signal amplification or feedback oscillation are obtained at the anode. Initially applied in electronic products such as televisions, radios, and loudspeakers, they were later gradually replaced by amplifiers and integrated circuits made from semiconductor materials, but in some high-fidelity audio equipment, vacuum tubes with low noise and high stability factors are still used as audio power amplification devices (in Hong Kong, vacuum tube power amplifiers are referred to as "tube amps").

Buerklin OHG electrical component characteristics

Sensitivity refers to the ratio of the change in output to the change in input under steady-state operating conditions of a sensor. It is the slope of the output-input characteristic curve. If the relationship between the sensor's output and input is linear, then the sensitivity S is a constant. Otherwise, it will vary with changes in the input quantity. The dimension of sensitivity is the ratio of the dimensions of the output and input quantities. When the dimensions of the sensor's output and input quantities are the same, sensitivity can be understood as the amplification factor. Increasing sensitivity can yield higher measurement precision. However, the higher the sensitivity, the narrower the measurement range, and stability often deteriorates.

Buerklin OHG electrical component principles

When the voltage applied across a varistor is below its threshold, the current flowing through it is extremely small, equivalent to a resistor with infinite resistance. That is, when the voltage applied across it is below its threshold, it acts like a switch in an open state. When the voltage applied across the varistor exceeds its threshold, the current flowing through it surges, equivalent to a resistor with infinitesimal resistance. That is, when the voltage applied across it is above its threshold, it acts like a switch in a closed state. Protection principle of surge absorbers: In the standby state, the varistor has very high impedance (several megaohms) relative to the protected electronic components and does not affect the characteristics of the original design circuit. However, when an instantaneous surge voltage occurs (exceeding the breakdown voltage of the surge absorber), the impedance of the surge absorber drops low (only a few ohms), causing a short circuit in the line, thereby protecting electronic products or more expensive components.

Buerklin OHG electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. The metal material can be aluminum, gold, molybdenum, nickel, titanium, etc., and the semiconductor is usually silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N-type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode, increase the reverse breakdown voltage, and avoid excessive series resistance, a high-resistance N- thin layer is typically epitaxially grown on an N+ substrate. It is well known that there are a large number of conductive electrons inside a metal conductor. When metal contacts a semiconductor (with the distance between them on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the energy levels corresponding to the conduction band in the metal and semiconductor, the electron density in the metal is less than that in the semiconductor's conduction band. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to acquire a negative charge and the semiconductor to acquire a positive charge. Since metal is an ideal conductor, the negative charge is distributed only within a thin layer on the surface with atomic-scale thickness. For N-type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). In the barrier region, the direction of the built-in electric field points from the N-type region toward the metal. As thermionic emission increases the built-in field, the drift current, which opposes the diffusion current, increases until dynamic equilibrium is reached, forming a contact barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (i.e., positive voltage to the metal and negative voltage to the semiconductor), the built-in field weakens, the barrier on the semiconductor side lowers, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field strengthens, the barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, like PN junction diodes, SBD is a nonlinear device with unidirectional conductivity.

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