CGM CIGIEMME electrical components German CGM CIGIEMME models CGM CIGIEMME prices

CGM CIGIEMME electrical components are electrical control devices. When the change in the input quantity (excitation quantity) meets specified requirements, they cause a predetermined step change in the controlled quantity within the electrical output circuit. They facilitate interaction between the control system (also known as the input circuit) and the controlled system (also known as the output circuit). Typically applied in automated control circuits, they function essentially as "automatic switches" that use small currents to control the operation of large currents. Therefore, they serve functions such as automatic regulation, safety protection, and circuit switching in electrical circuits. A relay is an electrical control device that, upon receiving a specified input quantity maintained for a sufficient duration, causes a predetermined step change in the controlled quantity within the electrical output circuit. When the input quantity drops to a certain level and remains there for a sufficient duration, the device returns to its initial state.

CGM CIGIEMME electrical component types

(1) Electron tubes can be classified by application into voltage amplifier tubes, power amplifier tubes, gas-filled tubes, thyratrons, ignitrons, frequency converter tubes, rectifier tubes, detector tubes, tuning indicator tubes (magic eyes), voltage regulator tubes, etc. (2) Electron tubes can be classified by the number of electrodes into voltage amplifier tubes, triodes, tetrodes, pentodes, hexodes, heptodes, octodes, nonodes, and composite tubes. Tubes with more than three electrodes are also called multi-electrode tubes or multi-grid tubes. (3) Electron tubes can be classified by shape and envelope material into bottle-shaped glass tubes (ST tubes), "acorn" tubes, cylindrical glass tubes (GT tubes), large glass tubes (G style tubes), metal-ceramic tubes, miniature tubes (also called peanut tubes or finger-shaped tubes, MT tubes), lighthouse tubes (tower-shaped tubes), and sub-miniature tubes (pencil-shaped tubes), among others. (4) Electron tubes can be classified by internal structure into single diodes, diodes, double-diode triodes, dual diodes, single triodes, power pentodes, beam tetrodes, beam pentodes, dual diodes, diode-pentode composite tubes, beam tetrodes, triode-pentode composite tubes, triode-hexode composite tubes, triode-heptode composite tubes, and various beam power types. (5) Electron tubes can be classified by cathode heating method into directly heated cathode electron tubes (current passes directly through the cathode to achieve thermionic emission) and indirectly heated cathode electron tubes (the cathode is heated by a filament adjacent to it). (6) Electron tubes can be classified by shielding method into sharp-cutoff shielded electron tubes and remote-cutoff shielded electron tubes. (7) Electron tubes can be classified by cooling method into water-cooled electron tubes, air-cooled electron tubes, and natural convection-cooled electron tubes.

CGM CIGIEMME electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metals such as aluminum, gold, molybdenum, nickel, and titanium can be used, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, N-type semiconductor material is selected as the substrate to achieve good frequency characteristics. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without causing excessive series resistance, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is well known, metal conductors contain a large number of conduction electrons. When metal contacts a semiconductor (with the separation distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. In the metal and at the energy levels corresponding to the semiconductor conduction band, the electron density is lower than that in the semiconductor conduction band. Therefore, upon contact, electrons diffuse from the semiconductor to the metal, causing the metal to acquire a negative charge and the semiconductor to acquire a positive charge. Since metal is an ideal conductor, the negative charge is distributed only within a surface layer of atomic thickness. For N-type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The diffusion of electrons from the semiconductor to the metal results in the formation of a space charge region, a built-in electric field, and a potential barrier, with the depletion layer located only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region toward the metal. As thermionic emission increases the built-in field, the drift current, which opposes the diffusion current, increases until dynamic equilibrium is reached, forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (positive voltage to the metal, negative voltage to the semiconductor), the built-in field is weakened, the barrier on the semiconductor side is lowered, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field strengthens, the barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, like SBD and PN junction diodes, it is a nonlinear device with unidirectional conductivity.

CGM CIGIEMME electrical component characteristics

The most important characteristic of a diode is its unidirectional conductivity. In a circuit, current can only flow into the diode's anode and out of its cathode. 1. Forward characteristics: In an electronic circuit, when the diode's anode is connected to a high potential and its cathode to a low potential, the diode conducts. This connection method is called forward bias. It must be noted that when the forward voltage across the diode is very low, the diode still does not conduct, and the forward current flowing through it is extremely weak. Only when the forward voltage reaches a certain value does the diode truly conduct. After conduction, the voltage across the diode remains basically constant, known as the diode's "forward voltage drop." 11. Reverse characteristics: In an electronic circuit, when the diode's anode is connected to a low potential and its cathode to a high potential, almost no current flows through the diode, placing it in a cutoff state. This connection method is called reverse bias. When a diode is reverse-biased, a weak reverse current, known as leakage current, still flows through it. When the reverse voltage across the diode increases to a certain value, the reverse current increases sharply, and the diode loses its unidirectional conductivity. This state is known as diode breakdown. The injection current of a laser diode must exceed the critical current density to satisfy the population inversion condition and emit laser light. The critical current density is related to the junction temperature and indirectly affects efficiency. During high-temperature operation, the critical current increases, efficiency decreases, and components may even be damaged.

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