Crameda electrical components Germany Crameda model Crameda price

Crameda electrical components are a type of sensor resistor whose resistance changes with temperature. According to the different temperature coefficients, they are divided into positive temperature coefficient thermistors and negative temperature coefficient thermistors. The resistance of a positive temperature coefficient thermistor increases as the temperature rises, while the resistance of a negative temperature coefficient thermistor decreases as the temperature rises; both belong to semiconductor devices.

Crameda electrical component parameters

① Rated operating voltage: refers to the voltage required by the coil for the relay to operate normally. Depending on the relay model, it can be AC voltage or DC voltage. ② DC resistance: refers to the DC resistance of the coil in the relay, which can be measured with a multimeter. ③ Pull-in current: refers to the minimum current required for the relay to perform the pull-in action. During normal use, the supplied current must be slightly greater than the pull-in current so that the relay can work stably. As for the operating voltage applied to the coil, it generally should not exceed the rated operating voltage; otherwise, a large current will be generated, burning out the coil. ④ Release current: refers to the maximum current at which the relay performs the release action. When the current in the pull-in state of the relay decreases to a certain level, the relay will return to the de-energized release state, at which point the current is much smaller than the pull-in current. ⑤ Contact switching voltage and current: refer to the voltage and current that the relay is allowed to handle. It determines the magnitude of voltage and current that the relay can control. This value must not be exceeded during use; otherwise, the relay contacts are easily damaged.

Crameda electrical component characteristics

① Volt-ampere characteristics: When a forward voltage is applied to the diode, if the voltage value is small, the current is extremely small; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually called the turn-on voltage of the diode, and the diode is in a fully conductive state. This voltage is usually called the conduction voltage of the diode. For germanium diodes, when a reverse voltage is applied to the diode, if the voltage value is small, the current is extremely small, and its value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, which is called reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values of different diode models vary greatly, from tens of volts to thousands of volts. ② Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristics, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This section is called the dead zone. This forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, the diode conducts in the forward direction, and the current rises rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant. This voltage is called the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction. This is called the threshold voltage or knee voltage. ③ Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current through the diode is the reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called reverse saturation current or leakage current. The reverse saturation current of the diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, and that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is heated and excited, the number of minority carriers increases, and the reverse saturation current also increases. ④ Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current will suddenly increase. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity is not necessarily permanently destroyed. After removing the applied voltage, its performance can still recover; otherwise, the diode is damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into two types according to the mechanism: Zener breakdown and avalanche breakdown. In the case of high doping concentration, because the width of the barrier region is very small, when the reverse voltage is large, the covalent bond structure in the barrier region is destroyed, causing valence electrons to break free from the covalent bonds and generate electron-hole pairs, resulting in a sharp increase in current. This breakdown is called Zener breakdown. If the doping concentration is low and the barrier region is wide, Zener breakdown is not easy to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in the covalent bonds, knocking valence electrons out of the covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current. This breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. ⑤ Reverse current: Reverse current refers to the current flowing through the diode when the diode is at room temperature and under the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. ⑥ Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. ⑦ Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. ⑧ Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Since the diode, like the PN junction, has junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. ⑨ Maximum rectified current: The maximum rectified current refers to the maximum allowable forward average current value when the diode operates continuously for a long time. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the core to heat up and the temperature to rise, if the temperature exceeds the permissible limit, the core will overheat and be damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed the maximum rectified current value during use.⑩ Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain value, the tube will break down and lose its unidirectional conductivity. To ensure safe use, the maximum reverse working voltage value is specified.

Crameda electrical component structure

The main purpose of fiber optic connectors is to achieve fiber splicing. Fiber optic connectors, which are widely used in fiber optic communication systems, come in many types and structures. However, upon closer examination, the basic structure of various types of fiber optic connectors is consistent. That is, most fiber optic connectors generally use high-precision components (consisting of two ferrules and one coupling tube, totaling three parts) to achieve aligned connection of the fibers. This method involves inserting and fixing the fiber into the ferrule, polishing the surface of the ferrule, and achieving alignment in the coupling tube. The outer component of the ferrule is made of metal or non-metallic materials. The mating end of the ferrule must be ground, and the other end usually uses a strain relief member to support the fiber or fiber optic cable to release stress. The coupling tube is generally made of two halves synthesized from ceramic or bronze materials, forming a tight cylindrical component, often equipped with metal or plastic flanges to facilitate the installation and fixation of the connector. To align the fibers as precisely as possible, the machining precision requirements for the ferrule and coupling tube are very high.

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