DEHNSOHNE electrical components German DEHNSOHNE models DEHNSOHNE prices

DEHNSOHNE electrical components are indispensable measuring instruments for departments such as power electronics, generally aimed at measuring voltage, current, and resistance. Multimeters are classified into analog multimeters and digital multimeters based on their display method. They are multifunctional, multi-range measuring instruments. Generally, multimeters can measure DC current, DC voltage, AC current, AC voltage, resistance, and audio levels; some can also measure AC current, capacitance, inductance, and certain semiconductor parameters (such as β). A multimeter is a magnetoelectric instrument equipped with a rectifier, capable of measuring various electrical parameters such as AC/DC current, voltage, and resistance. For each electrical quantity, there are generally several ranges. Also known as a multi-meter or simply multitester. A multimeter consists of a magnetoelectric ammeter (meter head), measuring circuits, and a selector switch. By switching the selector switch, various electrical parameters can be measured conveniently. The main basis for its circuit calculation is Ohm's law for closed circuits. There are many types of multimeters, which should be selected according to different requirements during use.

DEHNSOHNE electrical component features

Mercury switches achieve switching on and off by the movement of mercury enclosed in a glass or metal housing. Therefore, compared with mechanical switches, mercury switches have many characteristics: (1) Can be used in harsh environmental conditions. Since the mercury switch is sealed, the internal mercury is isolated from the outside, so it can be used in environments with oil, steam, dust, and corrosive gases. (2) Small external force required for switching. Mercury is the only metal that remains liquid at room temperature; it has high surface tension and specific gravity. Only a slight external force is needed to tilt the mercury switch, causing the mercury to move and achieve switching. (3) Mercury has good conductivity, and the contact resistance between the electrodes of a mercury switch is generally very small. (4) The current allowed through a mercury switch depends on the electrode material. (5) Since the switching of a mercury switch is determined by the gravity of the mercury, it can work reliably for a long time. (6) The electrode contacts are liquid contacts, producing no noise. (7) Since mercury can flow, as long as the acceleration exceeds the set value, the mercury switch can turn on or off, so it can be used as a vibration-sensitive element. (8) Small size, diverse forms, and fully sealed devices. (9) Simple structure and low price. (10) High quality, premium products, suitable for beginners.

DEHNSOHNE electrical component principle

A Schottky diode is a metal-semiconductor device made using noble metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at their contact surface. Because there are a large number of electrons in the N-type semiconductor and only a very small number of free electrons in the noble metal, electrons diffuse from the high-concentration B to the low-concentration A. Obviously, there are no holes in the metal A, so there is no diffusion of holes from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, destroying surface electrical neutrality, thus forming a barrier whose electric field direction is B → A. However, under the action of this electric field, electrons in A also produce a drift motion from A → B, thereby weakening the electric field formed by the diffusion motion. When a space charge region of a certain width is established, the electron drift motion caused by the electric field and the electron diffusion motion caused by the concentration difference reach a relative balance, forming a Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region, improving the withstand voltage of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 106% times higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the cathode contact resistance. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

DEHNSOHNE electrical component principle

1. Emission of electrons from the emitter region to the base region: The power supply Ub is applied across the emitter junction through resistor Rb. The emitter junction is forward-biased, and the majority carriers (free electrons) in the emitter region continuously cross the emitter junction into the base region, forming the emitter current Ie. At the same time, majority carriers in the base region also diffuse toward the emitter region, but since the majority carrier concentration is far lower than the carrier concentration in the emitter region, this current can be ignored; therefore, it can be considered that the emitter junction is mainly an electron flow. 2. Diffusion and recombination of electrons in the base region: After entering the base region, electrons first accumulate near the emitter junction, gradually forming an electron concentration difference. Under the action of this concentration difference, the electron flow is promoted to diffuse in the base region toward the collector junction, where they are pulled into the collector region by the collector junction electric field, forming the collector current Ic. A very small portion of electrons (because the base region is very thin) recombine with holes in the base region; the ratio of the diffused electron flow to the recombined electron flow determines the amplification capability of the transistor. 8. Collection of electrons by the collector region: Since a large reverse voltage is applied externally to the collector junction, the electric field force generated by this reverse voltage prevents electrons in the collector region from diffusing into the base region, while simultaneously pulling electrons diffused near the collector junction into the collector region, thereby forming the main collector current Icn. In addition, minority carriers (holes) in the collector region also produce drift motion, flowing toward the base region to form a reverse saturation current, represented by Icbo. Its value is very small, but it is extremely sensitive to temperature.

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