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dold soehne electrical components refer to an electrical device that disconnects the circuit by melting the fusible element with the heat generated by itself when the current exceeds a specified value. A fuse is a current protection device made based on the principle that when the current exceeds the specified value for a period of time, the heat generated by itself melts the fusible element, thereby disconnecting the circuit. Fuses are widely used in high and low voltage distribution systems, control systems, and electrical equipment as short-circuit and overcurrent protectors, making them one of the most commonly used protective devices. A metal conductor is used as the fusible element connected in series in the circuit; when overload or short-circuit current passes through the fusible element, it melts due to self-heating, thereby interrupting the circuit. Fuses have a simple structure and are easy to use, and are widely used in power systems, various electrical equipment, and household appliances as protective devices.

dold soehne electrical component principles

The Hall voltage changes with the magnetic field strength; the stronger the magnetic field, the higher the voltage, and the weaker the magnetic field, the lower the voltage. The Hall voltage value is very small, typically only a few millivolts, but after amplification by an amplifier in an integrated circuit, the voltage can be amplified enough to output a stronger signal. To make the Hall integrated circuit act as a sensor, mechanical methods are required to change the magnetic field strength. A rotating impeller is used as a switch to control magnetic flux. When the impeller blades are in the air gap between the magnet and the Hall integrated circuit, the magnetic field deviates from the integrated chip, and the Hall voltage disappears. In this way, the change in the output voltage of the Hall integrated circuit can indicate a certain position of the impeller drive shaft. Using this working principle, the Hall integrated circuit chip can be used as an ignition timing sensor. Hall effect sensors belong to passive sensors; they require an external power supply to work, which allows them to detect low-speed operation conditions.

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The main characteristics of thermistors are: (1) high sensitivity, with a resistance temperature coefficient larger than that of metals; (2) wide operating temperature range; (3) small size, capable of measuring temperatures in gaps, cavities, and blood vessels within living organisms that other thermometers cannot measure; (4) easy to use; (5) easy to process into complex shapes and suitable for mass production; (6) good stability and strong overload capacity.

dold soehne electrical component principles

P-type semiconductor is formed by doping a small amount of trivalent element impurities, such as boron, into an intrinsic semiconductor (a completely pure and structurally intact semiconductor crystal). Since a boron atom has only three valence electrons, it forms covalent bonds with surrounding silicon atoms. Due to the lack of one electron, a vacancy is created in the crystal. When electrons on adjacent covalent bonds gain energy, they may fill this vacancy, turning the boron atom into an immobile negative ion, while the covalent bond of the original silicon atom forms a hole due to the lack of one electron, but the entire semiconductor remains neutral. In this P-type semiconductor, conduction is mainly by holes, which are the majority carriers, while free electrons are the minority carriers. The principle of forming N-type semiconductor is similar to that of P-type. Pentavalent atoms, such as phosphorus, are doped into the intrinsic semiconductor. After doping, they form covalent bonds with silicon atoms, generating free electrons. In N-type semiconductors, electrons are the majority carriers, and holes are the minority carriers. Therefore, by doping trivalent and pentavalent impurity elements into two different regions of an intrinsic semiconductor, P-type and N-type regions are formed. Based on the characteristics of N-type and P-type semiconductors, it is known that a concentration difference of electrons and holes appears at their junction. Both electrons and holes diffuse from the high-concentration region to the low-concentration region, and their diffusion destroys the electrical neutrality at the original junction. PN junction unidirectional conductivity: when a forward voltage V is applied across the PN junction, the equilibrium state of the PN junction is broken under the influence of this external electric field. Holes in the P region and electrons in the N region both move towards the PN junction. Holes neutralize the negative ions in the P region of the PN junction, and electrons neutralize the positive ions in the N region of the PN junction, thus narrowing the PN junction. As the external electric field increases, diffusion motion is further enhanced, and drift motion is weakened. When the external voltage exceeds the threshold voltage, the PN junction acts as a resistor with very small resistance, meaning the PN junction is conducting.

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