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eht haustechn electrical components are sensor resistors whose resistance changes with temperature. Based on different temperature coefficients, they are classified into positive temperature coefficient thermistors and negative temperature coefficient thermistors. The resistance of a positive temperature coefficient thermistor increases as the temperature rises, while the resistance of a negative temperature coefficient thermistor decreases as the temperature rises; both belong to semiconductor devices.

eht haustechn electrical component principle

A Schottky diode is a metal-semiconductor device made by using noble metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at their contact interface. Because there are abundant electrons in the N-type semiconductor and only a very small number of free electrons in the noble metal, electrons diffuse from the high-concentration B to the low-concentration A. Clearly, there are no holes in the metal A, so there is no hole diffusion movement from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, disrupting surface electrical neutrality and forming a barrier whose electric field direction is B → A. However, under the influence of this electric field, electrons in A also undergo drift motion from A → B, thereby weakening the electric field formed by the diffusion motion. After a space charge region of a certain width is established, the electron drift motion caused by the electric field and the electron diffusion motion caused by the concentration difference reach a relative balance, forming the Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region, increasing the voltage withstand capability of the diode. The N-type substrate has a very small on-state resistance, and its doping concentration is 106% times higher than that of the H-layer. An N+ cathode layer is formed beneath the substrate to reduce the cathode contact resistance. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

eht haustechn electrical component principle

The forward characteristic of the volt-ampere characteristic curve of a Zener diode is similar to that of an ordinary diode. In the reverse characteristic, when the reverse voltage is lower than the reverse breakdown voltage, the reverse resistance is very high and the reverse leakage current is extremely small. However, when the reverse voltage approaches the critical value of the reverse voltage, the reverse current suddenly increases, known as breakdown. At this critical breakdown point, the reverse resistance suddenly drops to a very small value. Although the current varies over a wide range, the voltage across the diode remains basically stable near the breakdown voltage, thereby achieving the voltage stabilization function of the diode.

eht haustechn electrical component principle

A photodiode is a semiconductor device that converts optical signals into electrical signals. Its core part is also a PN junction. Compared with ordinary diodes, the structural difference is that, to facilitate the reception of incident light, the PN junction area is made as large as possible, the electrode area is made as small as possible, and the junction depth of the PN junction is very shallow, generally less than 3 micrometers. Photodiodes operate under reverse voltage. When there is no illumination, the reverse current is very small, called dark current. When illuminated, photons carrying energy enter the PN junction and transfer energy to bound electrons in covalent bonds, causing some electrons to break free from the covalent bonds, thereby generating electron-hole pairs, known as photogenerated carriers. They participate in drift motion under the action of reverse voltage, causing the reverse current to increase significantly. The greater the light intensity, the greater the reverse current. This characteristic is called "photoconductivity." The current generated by a photodiode under general illumination is called photocurrent. If a load is connected in the external circuit, the load receives an electrical signal, and this electrical signal changes correspondingly with the light. Photodiodes are widely used photosensitive devices in electronic circuits. Like ordinary diodes, photodiodes have a PN junction. The difference is that the housing of a photodiode has a transparent window to receive light irradiation, achieving photoelectric conversion. The text symbol in circuit diagrams is generally VD.

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