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erventec electrical components are varactor diodes, also known as "variable reactance diodes," which are made using the characteristic that the junction capacitance of a PN junction changes with the applied voltage when reverse-biased. As the reverse bias voltage increases, the junction capacitance decreases; conversely, the junction capacitance increases. The capacitance of a varactor diode is generally small, with a maximum value ranging from tens of pF to hundreds of pF. It is mainly used in high-frequency circuits for automatic tuning, frequency modulation, and phase adjustment, for example, as a variable capacitor in the tuning circuit of a television receiver. The main parameters are: zero-bias junction capacitance, zero-bias quality factor, reverse breakdown voltage, center reverse bias voltage, nominal capacitance, capacitance variation range (in picofarads), and cutoff frequency.

erventec electrical component parameters

Important aspects of the optical parameters of LED include: luminous flux, luminous efficacy, luminous intensity, light intensity distribution, and wavelength. 1. Luminous efficacy is the ratio of luminous flux to electrical power, with the unit generally being lm/W. Luminous efficacy represents the energy-saving characteristics of a light source, which is an important indicator for measuring the performance of modern light sources. 2.LED Luminous intensity characterizes the strength of light emission in a specific direction. Since the light intensity of LED varies significantly at different spatial angles, we have studied the light intensity distribution characteristics of LED. This parameter has significant practical implications, directly affecting the minimum viewing angle of LED display devices. For example, for large-color LED displays in sports stadiums, if the selected LED single-tube distribution range is very narrow, viewers at larger angles relative to the display will see distorted images. Moreover, traffic signal lights also require recognition by people over a wide area. 9. Regarding the spectral characteristics of LED, we mainly examine whether its monochromaticity is excellent, and pay attention to whether the main colors such as red, yellow, blue, green, and white LED are pure. Because in many occasions, such as traffic signal lights, the requirements for color are quite strict. However, observations show that some LED signal lights in China emit blue-green light for green and deep red for red. From this phenomenon, it is very necessary and meaningful to conduct specialized research on the spectral characteristics of LED.

erventec electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by the contact between metal and semiconductor. Metal materials can be aluminum, gold, molybdenum, nickel, titanium, etc., and the semiconductor is usually silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode, increase the reverse breakdown voltage, and avoid excessive series resistance, a high-resistance N- thin layer is typically epitaxially grown on an N+ substrate. As is well known, there are a large number of conductive electrons inside a metal conductor. When metal contacts a semiconductor (with the distance only on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the sub-levels corresponding to the conduction band of the semiconductor within the metal, the electron density is lower than the electron density in the conduction band of the semiconductor. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, the negative charge is distributed only within a thin layer on the surface with atomic-scale thickness. For N type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a potential barrier, with the depletion layer existing only on the N type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N type region to the metal. As thermionic emission increases the built-in field, the drift current, which is opposite to the diffusion current, increases, eventually reaching dynamic equilibrium and forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (i.e., positive voltage to the metal, negative voltage to the semiconductor), the built-in field is weakened, the potential barrier on the semiconductor side is lowered, thus forming a forward current from the metal to the semiconductor. When reverse bias is applied, the built-in field is strengthened, the potential barrier height increases, forming a smaller reverse current from the semiconductor to the metal. Therefore, SBD, like a PN junction diode, is a nonlinear device with unidirectional conductivity.

erventec electrical component applications

The most basic application of ordinary thyristors is controlled rectification. The familiar diode rectifier circuit belongs to uncontrollable rectification circuits. If the diode is replaced with a thyristor, a controlled rectification circuit can be formed. Taking the simplest single-phase half-wave controlled rectification circuit as an example, during the positive half-cycle of the sinusoidal AC voltage U2, if the gate of VS does not receive a trigger pulse Ug, VS cannot conduct. Only when U2 is in the positive half-cycle and a trigger pulse Ug is applied to the gate, the thyristor is triggered into conduction. Drawing its waveforms (c) and (d), voltage UL appears across the load RL only when the trigger pulse Ug arrives. If Ug arrives early, the thyristor conducts earlier; if Ug arrives late, the thyristor conducts later. By changing the arrival time of the trigger pulse Ug at the gate, the average value of the output voltage UL across the load can be adjusted. In electrical engineering technology, half a cycle of AC is often defined as 180°, called the electrical angle. Thus, in each positive half-cycle of U2, the electrical angle experienced from the zero value to the instant the trigger pulse arrives is called the control angle α; the electrical angle during which the thyristor conducts in each positive half-cycle is called the conduction angle θ. Clearly, α and θ are both used to indicate the conduction or blocking range of the thyristor during the half-cycle when it withstands forward voltage. By changing the control angle α or the conduction angle θ, the average value UL of the pulsed DC voltage across the load is changed, achieving controlled rectification. Low-power plastic-packaged bidirectional thyristors are commonly used in sound and light control lighting systems. Rated current is less than 10A. Large and medium-power plastic-packaged and iron-packaged thyristors are commonly used in power-type controlled voltage regulation circuits, such as adjustable output DC power supplies, etc. High-power high-frequency thyristors are commonly used in industry, such as in high-frequency melting furnaces.

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