
f-tronic electrical components Germany f-tronic model f-tronic price
f-tronic electrical component is an energy conversion device that converts DC electrical energy into AC electrical energy with a specific frequency; the circuit it forms is called an oscillator circuit. Simply put, an oscillator is a frequency source, generally used in phase-locked loops. In detail, it is a device that can convert DC electrical energy into AC electrical energy on its own without external signal excitation. It is generally divided into two types: positive feedback and negative resistance. The term "oscillation" implies AC; the oscillator includes the process and function of transitioning from non-oscillating to oscillating. Capable of completing the conversion from DC electrical energy to AC electrical energy
- SKU
- _P004837423
- Category
- Electrical and Electronic Components
- Brand
- f-tronic
- Tags
- Connectors / Cable / Switch / Relay / Controller / Germany f-tronic
f-tronic electrical component principle
In information technology, digital integrated circuits are the main players, processing information carried by digital signals, where digital signals take discrete values in terms of time and magnitude. However, signals in nature change continuously in time and magnitude, such as wind sound and water flow; such signals are called analog signals. Correspondingly, circuits that process analog signals are called analog circuits, and integrated circuits used to process analog signals are called analog integrated circuits. Obviously, digital circuits cannot directly interface with the natural world; merely for the convenience of processing or transmission, and to fully utilize the advantages of digital systems, analog signals are first converted into digital signals, input into modern digital systems with large capacity, high speed, strong anti-interference ability, and good confidentiality for processing, and then reconverted into analog signals for output. The main component of integrated circuits is the transistor, and analog integrated circuits are no exception, except that they utilize the amplification effect of transistors, while digital integrated circuits utilize the switching effect of transistors. Early analog integrated circuits mostly used bipolar transistors. Due to the maturity of CMOS technology, the disadvantage of slow speed in early CMOS circuits was overcome, and it has the advantages of low power consumption and convenient process upgrades (CMOS scaling). Nowadays, analog integrated circuits and mixed-signal integrated circuits (digital and analog circuits integrated together) are also commonly designed and implemented using CMOS.
f-tronic electrical component parameters
1. Nominal varistor voltage: refers to the voltage value across the varistor when a pulse current of specified duration passes through. 2. Voltage ratio: refers to the ratio of the voltage value generated by the current of the varistor to the voltage value generated by the current of the varistor. 3. Maximum limiting voltage: the peak voltage across the varistor under the maximum pulse peak current Ip that the varistor can withstand and under the specified waveform. 4. Residual voltage ratio: when the current passing through the varistor is a certain value, the voltage generated across it is called the residual voltage for this current value. The residual voltage ratio is the ratio of the residual voltage to the nominal voltage. 5. Surge current capacity: Surge current capacity, also known as surge current, refers to the maximum pulse current value allowed to pass through the varistor under specified conditions. 6. Leakage current: Leakage current, also known as standby current, refers to the current flowing through the varistor when the varistor is at the specified temperature and maximum DC voltage. 7. Voltage temperature coefficient: refers to the rate of change of the nominal voltage of the varistor within the specified temperature range, i.e., the relative change in voltage across the varistor when the temperature changes while the current passing through the varistor remains constant. 8. Current temperature coefficient: refers to the relative change in the current flowing through the varistor when the temperature changes while the voltage across the varistor remains constant. 9. Voltage nonlinearity coefficient: refers to the ratio of the static resistance value to the dynamic resistance value of the varistor under a given applied voltage. 10. Insulation resistance: refers to the resistance value between the lead wires of the varistor and the insulating surface of the resistive body. 11. Static capacitance: refers to the inherent capacitance of the varistor itself. 12. Rated power: the maximum power that causes a change in varistor voltage when operating at a specific ambient temperature. 14. Maximum impulse current: the maximum impulse current that causes a change in varistor voltage when the varistor is impacted by a specific pulse current once or twice.
f-tronic electrical component features
Most microphones are electret condenser microphones (ECM), a technology with a history of several decades. The working principle of ECM utilizes a polymer diaphragm with permanently isolated charge. Compared to the polymer diaphragm of ECM, MEMS microphones exhibit stable performance across different temperatures and are not affected by temperature, vibration, humidity, or time. Due to strong heat resistance, MEMS microphones can withstand high-temperature reflow soldering without any change in performance. Since the sensitivity change before and after assembly is minimal, this can even save audio debugging costs during the manufacturing process. Currently, integrated circuit processes are increasingly widely applied in the manufacturing of sensors and sensor interface integrated circuits. This microfabrication process has the advantages of precision, flexible design, miniaturization, integrability with signal processing circuits, low cost, and mass production. A fundamental resonant frequency in such a low frequency band will result in highly uneven frequency response of the microphone within the audible frequency range, which is unacceptable for microphone applications. When tensile stress exists in the sensitive membrane, its resonant frequency increases, but at the cost of sensitivity. Of course, higher fundamental resonant frequencies can be obtained by adjusting the size of the sensitive membrane, but this will still reduce sensitivity. Thus, piezoresistive solutions are not suitable for the manufacture of micro-microphones. A feasible solution is to adopt capacitive schemes to manufacture micro-microphones. The advantage of this method is that all materials used in the integrated circuit manufacturing process can be used for sensor manufacturing. However, manufacturing micro-microphones using single-chip processes is quite difficult because the air medium between the two capacitor plates can only have a very small gap. Moreover, due to size limitations, bias voltage is difficult to satisfy in some application scenarios. Based on the above issues, research on capacitive microphones has been continuous. Compared to traditional electret microphones, MEMS microphones offer advantages such as small size, good heat resistance, good consistency, good stability, high reliability, and RF interference immunity, and can also output digital signals, facilitating intelligent development.
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