FULGUR electrical components German FULGUR models FULGUR prices

FULGUR electrical components are high-power electronic components, also known as thyristors. They offer advantages such as compact size, high efficiency, and long service life. In automatic control systems, they can serve as high-power drive devices, enabling low-power control elements to manage high-power equipment. They are widely used in AC/DC motor speed control systems, power regulation systems, and servo systems. Thyristors are classified into unidirectional and bidirectional types. Bidirectional thyristors are also called triacs, abbreviated as TRIAC. Structurally, a bidirectional thyristor is equivalent to two unidirectional thyristors connected in reverse parallel. This type of thyristor has bidirectional conduction capability. Its on/off state is determined by the gate G. Applying a positive pulse (or negative pulse) to the gate G enables forward (or reverse) conduction. The advantages of this device include simple control circuitry and no reverse voltage withstand issues, making it particularly suitable for use as an AC contactless switch.

FULGUR electrical component principles

When two different conductors or semiconductors A and B form a loop with their ends interconnected, an electromotive force (EMF) is generated in the loop as long as the temperatures at the two junctions differ. One junction, at temperature T, is called the working end or hot end; the other, at temperature T0, is called the free end or cold end. The direction and magnitude of this EMF depend on the conductor materials and the temperatures of the two junctions. This phenomenon is called the "thermoelectric effect." The loop formed by the two conductors is called a "thermocouple," the conductors are called "thermoelectrodes," and the generated EMF is called "thermoelectric EMF." Thermoelectric EMF consists of two components: the contact EMF between the two conductors and the thermal gradient EMF within a single conductor. The magnitude of the thermoelectric EMF in a thermocouple loop depends only on the conductor materials and the junction temperatures, not on the shape or dimensions of the thermocouple. Once the thermocouple electrode materials are fixed, the thermoelectric EMF is a function of the difference between the junction temperatures t and t0. This relationship is widely applied in practical temperature measurement. Since the cold end t0 is held constant, the thermoelectric EMF generated by the thermocouple varies only with the temperature of the hot end (measurement end). Thus, a specific thermoelectric EMF corresponds to a specific temperature. Temperature measurement is achieved by measuring the thermoelectric EMF. The basic principle of thermocouple temperature measurement is that a closed loop formed by two dissimilar material conductors generates a current when a temperature gradient exists between the ends, resulting in an EMF—the thermoelectric EMF—known as the Seebeck effect. The two homogeneous dissimilar conductors serve as thermoelectrodes; the higher-temperature end is the working end, and the lower-temperature end is the free end, which is typically maintained at a constant temperature. Based on the functional relationship between thermoelectric EMF and temperature, thermocouple reference tables are established. These tables are derived under the condition that the free end temperature is 7 °C; different thermocouples have different reference tables. When a third metal material is introduced into the thermocouple loop, the thermoelectric EMF remains unchanged provided the temperatures at the two junctions of this material are identical. Thus, the insertion of the third metal does not affect the thermocouple output. Therefore, during thermocouple temperature measurement, a measuring instrument can be connected; once the thermoelectric EMF is measured, the temperature of the measured medium can be determined. For accurate thermocouple temperature measurement, the cold end temperature (the end connected via lead wires to the measurement circuit, while the measurement end is the hot end) must remain constant so that the thermoelectric EMF maintains a proportional relationship with the measured temperature. If the cold end (ambient) temperature changes during measurement, it will significantly affect measurement accuracy. Compensating for the effects of cold end temperature variations is called thermocouple cold junction compensation. Dedicated compensation cables are used to connect to the measuring instrument. Thermocouple cold junction compensation calculation methods: (1) From millivolts to temperature: Measure the cold end temperature, convert it to the corresponding millivolt value, add it to the thermocouple's millivolt reading, and convert the sum to temperature; (2) From temperature to millivolts: Measure the actual temperature and the cold end temperature, convert each to millivolt values, subtract them to obtain the net millivolt value, which corresponds to the temperature.

FULGUR electrical component parameters

The main parameters of a transistor include current amplification factor, dissipated power, frequency characteristics, maximum collector current, maximum reverse voltage, and reverse current. Amplification factor: The DC current amplification factor, also known as the static current amplification factor or DC amplification ratio, refers to the condition when there is no changing signal input in the static state, and is the ratio of the transistor's collector current to its base current. AC amplification ratio: The AC amplification ratio, also known as the AC current amplification factor or dynamic current amplification factor, refers to the condition in an AC state, and is the ratio of the change in the transistor's collector current to the change in its base current. Dissipated power: Dissipated power, also known as the maximum allowable collector dissipated power PCM, refers to the maximum collector dissipated power when the transistor parameter changes do not exceed the specified allowable values. Dissipated power is closely related to the transistor's maximum allowable junction temperature and maximum collector current. When using a transistor, its actual power consumption must not exceed the PCM value, otherwise, it will cause damage to the transistor due to overload. When the operating frequency of the transistor exceeds the cutoff frequency, its current amplification factor will decrease as the frequency increases. The maximum oscillation frequency refers to the frequency at which the transistor's power gain drops to 3. Typically, the maximum oscillation frequency of high-frequency transistors is lower than the common-base cutoff frequency, while the characteristic frequency is higher than the common-base cutoff frequency but lower than the common-collector cutoff frequency. Maximum current: The maximum collector current refers to the maximum current allowed to pass through the transistor's collector. Maximum reverse voltage: The maximum reverse voltage refers to the highest working voltage allowed to be applied to the transistor during operation. It includes the collector-emitter reverse breakdown voltage, collector-base reverse breakdown voltage, and emitter-base reverse breakdown voltage. The collector reverse breakdown voltage refers to the condition when the transistor's base is open-circuited, The maximum allowable reverse voltage between its collector and emitter. The base reverse breakdown voltage refers to the condition when the transistor emitter is open-circuited, the maximum allowable reverse voltage between its collector and base. The emitter reverse breakdown voltage refers to the condition when the transistor collector is open-circuited, the maximum allowable reverse voltage between its emitter and base. The reverse current between the bases, also known as the collector junction reverse leakage current, refers to the condition when the transistor emitter is open-circuited, the reverse current between the collector and base. The reverse breakdown current between the emitters refers to the condition when the transistor base is open-circuited, the reverse leakage current between its collector and emitter, also known as the penetration current. The smaller this current value, the better the performance of the transistor.

FULGUR electrical component types

Common thermocouples are classified into standard and non-standard types. Standard thermocouples are those for which national standards define the relationship between thermoelectric EMF and temperature, allowable errors, and provide unified standard reference tables. Matching display instruments are available for these thermocouples. Non-standard thermocouples have more limited application ranges or magnitudes compared to standard thermocouples and generally lack unified reference tables; they are mainly used for measurements in special applications. Theoretically, any two different conductors (or semiconductors) can form a thermocouple. However, practical temperature-sensing elements must meet multiple requirements. To ensure reliability in engineering applications and sufficient measurement precision, not all materials are suitable for thermocouples. Basic requirements for thermocouple electrode materials include: 1 Stable thermoelectric properties within the temperature measurement range, without variation over time, sufficient physical and chemical stability, and resistance to oxidation or corrosion; 2 Low temperature coefficient of resistance, high electrical conductivity, and low specific heat; 3 Large thermoelectric EMF generation during temperature measurement, with a linear or nearly linear single-valued functional relationship between thermoelectric EMF and temperature; 6 Good material reproducibility, high mechanical strength, simple manufacturing process, and low cost.

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