GREENLUX electrical components Germany GREENLUX model GREENLUX price

GREENLUX electrical component is an electronic device with three terminals, made of three semiconductor parts with different doping levels. The charge flow in the transistor is mainly due to the diffusion and drift movement of carriers at the PN junction. The operation of this transistor involves the flow of both electrons and holes, so it is called bipolar, also known as a bipolar junction transistor. This operating mode is different from unipolar transistors such as field-effect transistors, whose operation only involves the drift of a single type of carrier. The boundary between the two regions with different dopants is formed by the PN junction. Bipolar transistors can amplify signals and have good power control, high-speed operation, and durability, so they are often used to form amplifier circuits or drive devices such as speakers and motors, and are widely used in aerospace engineering, medical devices, robotics, and other applications.

GREENLUX electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metals such as aluminum, gold, molybdenum, nickel, and titanium can be used, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, N-type semiconductor material is selected as the substrate to achieve good frequency characteristics. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without causing excessive series resistance, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. It is well known that there are a large number of conductive electrons inside a metal conductor. When metal contacts a semiconductor (with a distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the energy levels corresponding to the conduction band of the semiconductor within the metal, the electron density is lower than that in the semiconductor conduction band. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since the metal is an ideal conductor, the negative charge is distributed only within a thin layer on the surface with atomic-scale thickness. For N-type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a potential barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region to the metal. As thermionic emission increases the built-in field, the drift current opposite to the diffusion current increases, finally reaching dynamic equilibrium and forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (positive voltage to the metal, negative voltage to the semiconductor), the built-in field is weakened, the barrier on the semiconductor side is lowered, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field strengthens, the barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, like PN junction diodes, SBD is a nonlinear device with unidirectional conductivity.

GREENLUX electrical component principle

A resistor consists of three parts: the resistive element, the backbone, and the leads (for solid-core resistors, the resistive element and backbone are combined into one), but only the resistive element determines the resistance value. The volt-ampere characteristic is represented by a graphical curve showing the relationship between voltage and current at the resistor terminals. When voltage and current are proportional (the characteristic is a straight line), it is called a linear resistor; otherwise, it is called a nonlinear resistor. The maximum power dissipation allowed for a resistor to operate continuously at the rated temperature (maximum ambient temperature) tR. For each resistor, a maximum working voltage is also specified; that is, even if the rated power is not reached, the maximum working voltage must not be exceeded when the resistance is high. The rated power of a resistor refers to the maximum power allowed to be consumed during long-term continuous operation in DC or AC circuits. Load characteristics: When the ambient temperature is below tR, the resistor must not exceed its rated power; when it exceeds tR, the load power must be derated. Each resistor has specified load characteristics. In addition, the allowable load decreases under low pressure. Under pulse load, the average pulse power is much lower than the rated power, and separate specifications usually apply.

GREENLUX electrical component principle

In addition to the ability of photodiodes to convert optical signals into electrical signals, phototransistors also have the function of amplifying electrical signals. The appearance of a phototransistor is not much different from that of a general transistor. Generally, only two terminals are brought out for a phototransistor—the emitter and the collector—while the base terminal is not brought out. The casing also has an opening to allow light to enter. To increase light exposure, the base region is made very large, while the emitter region is relatively small, so that incident light is mainly absorbed by the base region. During operation, the collector junction is reverse-biased, and the emitter junction is forward-biased. In the absence of light, the current flowing through the transistor is the dark current Iceo = (1 + β) Icbo (very small), which is even smaller than the leakage current of a typical transistor; when exposed to light, a large number of electron-hole pairs are generated, causing the base current Ib to increase. At this point, the current flowing through the transistor is called photocurrent, with the emitter current Ie = (4 + β) Ib. It can be seen that phototransistors have higher sensitivity compared to photodiodes.

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