
GRUNER electrical components Germany GRUNER model GRUNER price
GRUNER electrical components are devices that convert alternating current into direct current, and can be used in power supply units and for detecting radio signals, etc. Rectifiers can be made from vacuum tubes, ignitrons, solid-state silicon semiconductor diodes, mercury arcs, and so on. Conversely, a device that converts direct current into alternating current is called an "inverter". In a standby UPS, only the battery needs to be charged, without supplying power to the load, so there is only a charger. In a double-conversion UPS, this device supplies power to the inverter and also charges the battery, so it is called a rectifier/charger. A rectifier is a rectifying
- SKU
- _P004837345
- Category
- Electrical and Electronic Components
- Brand
- GRUNER
- Tags
- Connectors / Cable / Switch / Relay / Controller / Germany GRUNER
GRUNER electrical component structure
The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metal materials such as aluminum, gold, molybdenum, nickel, and titanium can be selected, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N-type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage, without causing excessive series resistance, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is well known, there are a large number of conductive electrons inside a metal conductor. When metal contacts a semiconductor (with the distance between them on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the energy levels corresponding to the conduction band of the semiconductor within the metal, the electron density is lower than the electron density in the semiconductor's conduction band. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, the negative charge is distributed only within a thin layer on the surface, on the scale of atomic size. For N-type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a potential barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region toward the metal. As thermionic emission increases the built-in field, the drift current, which is opposite in direction to the diffusion current, increases, eventually reaching dynamic equilibrium and forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (i.e., positive voltage to the metal, negative voltage to the semiconductor), the built-in field is weakened, the potential barrier on the semiconductor side is lowered, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field is strengthened, the potential barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, like a SBD and PN junction diode, it is a nonlinear device with unidirectional conductivity.
GRUNER electrical component requirements
1. Copper and aluminum rods, commonly used for power cables, are drawn at ambient temperature through one or more drawing dies using a wire drawing machine. This process reduces the cross-sectional area, increases the length, and improves the strength of the material. Wire drawing is the first processing step in wire and cable manufacturing. The primary process parameter in wire drawing is die selection. 2. Copper and aluminum single wires are heated to a specific temperature and undergo recrystallization annealing to improve toughness and reduce strength, thereby meeting the requirements for conductive cores in wires and cables. The key aspect of the annealing process is to prevent oxidation of the copper wires. 3. To improve the flexibility of power cables and facilitate installation, the conductive core is constructed by stranding multiple single wires. Stranding methods are classified into regular stranding and irregular stranding. Irregular stranding includes bunch stranding, concentric composite stranding, and special stranding. To reduce the occupied area of the conductor and minimize the geometric dimensions of the power cable, compacted stranding is applied during the stranding process. This transforms the standard circular shape into semi-circular, sector, tile, or compacted circular shapes. Such conductors are primarily used in power cables. 4. Plastic-insulated power cables mainly employ extruded solid insulation layers. The tolerance of the insulation thickness is a key indicator of the extrusion process quality. Most product structural dimensions and their tolerances are clearly specified in standards. The surface of the plastic insulation layer must be smooth, free from defects such as roughness, scorching, or impurities. The cross-section of the insulation layer must be dense and robust, with no visible pinholes or air bubbles. 5. Multi-core power cables are generally stranded into a circular shape to ensure form stability and reduce the overall cable profile. The stranding mechanism is similar to that of conductor stranding; however, due to the larger lay length, non-back-twist methods are mostly adopted. Technical requirements for cabling include: first, preventing the rotation of shaped insulated cores that could cause cable twisting; second, avoiding damage to the insulation layer. During cabling, two additional processes are typically performed simultaneously: filling, to ensure the roundness and stability of the cable after cabling; and binding, to keep the cable core compact. 6. To protect the insulated cores from damage by the armor, appropriate protection is applied to the insulation layer. Inner sheaths are categorized into extruded inner sheaths (separator sleeves) and wrapped inner sheaths (bedding layers). The wrapped bedding layer replaces the binding tape and is applied synchronously with the cabling process. 7. For power cables installed underground that may withstand certain positive pressure during operation, an internal steel tape armor structure can be selected. For installations subject to both positive pressure and tensile forces (such as in water, vertical shafts, or soil with significant elevation differences), a structure with internal steel wire armor should be chosen. 12. The outer sheath is the component that protects the cable's insulation layer from environmental corrosion. Its main functions are to enhance the mechanical strength of the power cable, provide resistance to chemical corrosion, moisture, and water ingress, and prevent the cable from burning. Depending on the specific requirements for the power cable, a plastic sheath is directly extruded using an extruder.
GRUNER electrical component principle
It mainly consists of an LC circuit composed of capacitors and inductors, producing free oscillation through the mutual conversion of electric field energy and magnetic field energy. To sustain oscillation, an amplifier circuit with positive feedback is required. LC oscillators are further divided into transformer-coupled and three-point oscillators. Many applications use quartz crystal oscillators, and there are also LC oscillators composed of integrated operational amplifiers. Since component parameters cannot be perfectly identical, the states of the two transistors change at the moment of power-up. This change becomes increasingly intense due to positive feedback, leading to a quasi-stable state. During the quasi-stable period, the other transistor gradually charges via the capacitor and then conducts or cuts off, causing a state flip and reaching another quasi-stable state. This cycle repeats to form oscillation.
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