HELLERMANN TYTON electrical components, German HELLERMANN TYTON models, HELLERMANN TYTON prices

HELLERMANN TYTON electrical components are current-limiting elements. When a resistor is connected in a circuit, its resistance is generally fixed with two pins, limiting the current through the branch it is connected to. Resistors with unchangeable resistance are called fixed resistors. Those with variable resistance are called potentiometers or variable resistors. An ideal resistor is linear, meaning the instantaneous current through it is proportional to the applied instantaneous voltage. Variable resistors used for voltage division have one or two movable metal contacts pressed tightly against the exposed resistive body. The contact position determines the resistance between either end of the resistive body and the contact. It is a two-terminal device where terminal voltage and current have a definite functional relationship, reflecting the ability to convert electrical energy into other forms, represented by the letter R, with the unit Ohm (Ω). Actual devices such as light bulbs, heating wires, and resistors can all be represented as resistor elements. The resistance value is generally related to temperature, material, length, and cross-sectional area. The physical quantity measuring the effect of temperature on resistance is the temperature coefficient, defined as the percentage change in resistance when the temperature rises by 1 °C. The main physical characteristic of a resistor is converting electrical energy into thermal energy; it is also called a dissipative element, generating internal energy when current passes through it. Resistors usually serve voltage division and current shunting functions in circuits. For signals, both AC and DC signals can pass through resistors.

HELLERMANN TYTON electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metal materials can include aluminum, gold, molybdenum, nickel, and titanium, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, N-type semiconductor material is selected as the substrate to achieve good frequency characteristics. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without making the series resistance too large, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As known, metal conductors contain a large number of conduction electrons. When metal contacts a semiconductor (with a distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. In the metal and the sub-levels corresponding to the semiconductor conduction band, the electron density is lower than that in the semiconductor conduction band. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, negative charge is distributed only within a surface layer of atomic thickness. For N-type semiconductors, donor impurity atoms that lose electrons become positive ions distributed over a larger thickness. The diffusion of electrons from the semiconductor to the metal results in the formation of a space charge region, built-in electric field, and potential barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region to the metal. As thermionic emission increases the built-in field, the drift current opposite to the diffusion current increases, finally reaching dynamic equilibrium and forming a contact potential barrier between the metal and semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (positive voltage to metal, negative to semiconductor), the built-in field weakens, lowering the barrier on the semiconductor side, thus forming a forward current from metal to semiconductor. When reverse bias is applied, the built-in field strengthens, increasing the barrier height and forming a small reverse current from semiconductor to metal. Therefore, like a SBD-PN junction diode, it is a nonlinear device with unidirectional conductivity.

HELLERMANN TYTON electrical component principles

The working principle of a discharge tube is gas gap discharge i. When a certain voltage is applied between the two poles of the discharge tube, a non-uniform electric field is generated between the poles. Under this electric field, the gas inside the tube begins to ionize. When the applied voltage increases to the point where the field strength between the poles exceeds the insulation strength of the gas, the gap between the poles breaks down, transitioning from an insulating state to a conducting state. After conduction, the voltage between the two poles of the discharge tube is maintained at a residual voltage level determined by the discharge arc channel. This residual voltage is generally very low, thereby protecting electronic equipment connected in parallel with the discharge tube from overvoltage damage.

HELLERMANN TYTON electrical component characteristics

① Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low. When the voltage exceeds a certain value, the current begins to increase exponentially. This is usually called the turn-on voltage of the diode, and the diode is in a fully conducting state; this voltage is usually called the conduction voltage. For germanium diodes, when a reverse voltage is applied, the current is extremely small when the voltage value is low, and its value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, known as reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values of different diode models vary greatly, ranging from tens of volts to thousands of volts. ② Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristics, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This section is called the dead zone. The forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, and the diode conducts forward, with the current rising rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant; this voltage is called the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts forward. This is called the threshold voltage or cut-in voltage. ③ Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current through the diode is the reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called reverse saturation current or leakage current. The reverse saturation current of a diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, while that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is excited by heat, the number of minority carriers increases, and the reverse saturation current also increases. ④ Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity is not necessarily permanently destroyed. After removing the applied voltage, its performance can still recover; otherwise, the diode is damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into Zener breakdown and avalanche breakdown based on the mechanism. In cases of high doping concentration, because the barrier region width is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, freeing valence electrons from covalent bonds and generating electron-hole pairs, causing the current to increase sharply. This breakdown is called Zener breakdown. If the doping concentration is low, the barrier region width is wider, and Zener breakdown is less likely to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche increase in carriers and a sharp increase in current. This breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. ⑤ Reverse current: Reverse current refers to the current flowing through the diode under ambient temperature and maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. ⑥ Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. ⑦ Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. ⑧ Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Since the diode, like the PN junction, has junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. ⑨ Maximum rectified current: The maximum rectified current refers to the maximum allowable average forward current when the diode operates continuously for a long time. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the core to heat up and the temperature to rise, exceeding the permissible limit will cause the core to overheat and fail. Therefore, under specified heat dissipation conditions, the diode should not exceed its maximum rectified current value during use.⑩ Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe operation, the maximum reverse working voltage value is specified.

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