hengstler electrical components Germany hengstler model hengstler price

hengstler electrical components are parts of electronic components and small electrical machines and instruments. They often consist of several parts and can be used interchangeably in similar products; they often refer to certain parts in the electrical, radio, and instrumentation industries. In fact, electronic components are the general term for components and devices.

hengstler electrical component characteristics

The main parameters characterizing resistance characteristics include nominal resistance and its allowable tolerance, rated power, load characteristics, and resistance temperature coefficient. Load characteristics: When the ambient working temperature is below tR, the resistor must not exceed its rated power; when it exceeds tR, the load power must be reduced. Each type of resistor has specified load characteristics. In addition, the load is allowed to decrease accordingly under low pressure. Under pulse load, the average pulse power is much lower than the rated power, and there are generally separate regulations. Within the specified ambient temperature range, the average relative change in resistance for every 1 °C change in temperature is expressed in ppm/°C. In addition to the above parameters, there are other technical indicators such as nonlinearity (the degree to which the current-voltage characteristic deviates from a linear relationship), voltage coefficient (the relative rate of change in resistance per volt change in applied voltage), current noise (the ratio of the effective value of the noise potential generated by current flow within the resistor body to the test voltage, expressed by the current noise index), high-frequency characteristics (the curve showing the decrease in resistance with increasing operating frequency due to the influence of distributed capacitance and inductance within the resistor body), and long-term stability (the process of irreversible change in resistance due to environmental conditions during long-term use or storage).

hengstler electrical component characteristics

The characteristics of an inductor are exactly opposite to those of a capacitor; it has the property of blocking alternating current while allowing direct current to pass smoothly. The resistance when a DC signal passes through the coil is just the resistance of the wire itself, resulting in a very small voltage drop; when an AC signal passes through the coil, a self-induced electromotive force is generated at both ends of the coil. The direction of the self-induced electromotive force is opposite to that of the external voltage, hindering the passage of AC. Therefore, the characteristic of an inductor is to pass DC and block AC; the higher the frequency, the greater the coil impedance. Inductors often work together with capacitors in circuits to form LC filters and LC oscillators. In addition, people utilize the characteristics of inductance to manufacture chokes, transformers, relays, etc. Passing DC: This means that the inductor presents a conductive state to DC. If the resistance of the inductor coil is ignored, DC can pass through the inductor "unimpeded." For DC, the coil's own resistance has very little hindering effect, so it is often ignored in circuit analysis. Blocking AC: When AC passes through the inductor coil, the inductor impedes the AC. What hinders the AC is the inductive reactance of the coil.

hengstler electrical component principle

1. Emission of electrons from the emitter region to the base region: The power supply Ub is applied to the emitter junction through the resistor Rb. The emitter junction is forward-biased, and the majority carriers (free electrons) in the emitter region continuously cross the emitter junction into the base region, forming the emitter current Ie. At the same time, the majority carriers in the base region also diffuse toward the emitter region, but since their concentration is far lower than that of the carrier concentration in the emitter region, this current can be neglected. Therefore, it can be considered that the emitter junction is mainly an electron flow. 2. Diffusion and recombination of electrons in the base region: After entering the base region, electrons first accumulate near the emitter junction, gradually forming an electron concentration gradient. Under the action of this concentration gradient, the electron flow is promoted to diffuse in the base region toward the collector junction and is pulled into the collector region by the electric field of the collector junction, forming the collector current Ic. A very small portion of electrons (because the base region is very thin) recombine with holes in the base region. The ratio of the diffused electron flow to the recombined electron flow determines the amplification capability of the transistor. 6. Collection of electrons by the collector region: Since a large reverse voltage is applied externally to the collector junction, the electric field force generated by this reverse voltage prevents electrons in the collector region from diffusing into the base region and simultaneously pulls electrons diffusing near the collector junction into the collector region, thereby forming the main collector current Icn. In addition, the minority carriers (holes) in the collector region also undergo drift motion, flowing toward the base region to form a reverse saturation current, denoted by Icbo. Its value is very small, but it is extremely sensitive to temperature.

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