HUBER+SUHNER electrical components Germany HUBER+SUHNER model HUBER+SUHNER price

HUBER+SUHNER electrical component is a pyroelectric infrared sensor, a device constructed from thermocouples. It is widely used as a temperature detection device in fields such as ear thermometers, radiation thermometers, electric ovens, and food temperature testing. The entry details the basic unit of a thermopile—the thermocouple; and provides a detailed introduction to the structure, working principle, main parameters, and applications of thermopiles.

HUBER+SUHNER electrical component classification

Plug-in fuses are often used at the end of a line for short-circuit protection of distribution branch circuits or electrical equipment. The upper cap of the fusible element in a screw-type fuse has a blow indicator; once the fusible element melts, the indicator pops out immediately and can be observed through the glass hole on the ceramic cap. It is commonly used in machine tool electrical control equipment. Screw-type fuse. Enclosed fuses are divided into filled fuses and unfilled fuses. Filled fuses generally use square ceramic tubes containing quartz sand and the fusible element, offering high breaking capacity. Unfilled enclosed fuses enclose the fusible element in a sealed cylinder, with slightly lower breaking capacity. Fast-acting fuses are mainly used for short-circuit protection of semiconductor rectifier elements or rectifier devices. Since semiconductor components have very low overload capacity and can only withstand large overload currents for extremely short periods, short-circuit protection requires fast-acting fusing capability. The structure of a fast-acting fuse is basically the same as that of a filled enclosed fuse, but the material and shape of the fusible element differ; it uses a silver sheet stamped into a variable cross-section fusible element with V shaped deep grooves. Fast-acting fuses are commonly referred to as "fast fuses," characterized by fast fusing speed, high rated current, strong breaking capacity, stable current-limiting characteristics, and small size. Self-resetting fuses use sodium metal as the fusible element, which has high electrical conductivity at room temperature. When a short-circuit fault occurs in the circuit, the short-circuit current generates high heat that rapidly vaporizes the sodium; the gaseous sodium presents a high-resistance state, thereby limiting the short-circuit current. After the short-circuit current disappears and the temperature drops, the sodium metal restores its original good conductivity. Self-resetting fuses can only limit short-circuit current and cannot truly interrupt the circuit. Their advantage is that the fusible element does not need to be replaced, allowing for repeated use.

HUBER+SUHNER electrical component structure

A bipolar transistor consists of three differently doped semiconductor regions: the emitter region, the base region, and the collector region. In an NPN type transistor, these regions are N type, P type, and N type semiconductors, respectively, while in an PNP type transistor, they are P type, N type, and P type semiconductors, respectively. Each semiconductor region has a lead terminal, typically denoted by the letters E, B, and C for the emitter, base, and collector, respectively. The base is physically located between the emitter and the collector and is made of lightly doped, high-resistivity material. The collector surrounds the base region; since the collector junction is reverse-biased, it is difficult for electrons to be injected from here into the base region, resulting in a common-base current gain of approximately 12, while the common-emitter current gain achieves a larger value. From the cross-sectional diagram of this typical NPN type bipolar transistor on the right, it can be seen that the area of the collector junction is larger than that of the emitter junction. In addition, the emitter has a relatively high doping concentration. Under normal circumstances, the regions of a bipolar transistor are not symmetric in physical properties or geometric dimensions. Assuming the transistor connected in the circuit is in the forward active region, swapping the connections of the collector and emitter in the circuit will cause the transistor to leave the forward active region and enter the reverse active region. The internal structure of the transistor determines that it is suitable for operation in the forward active region, so the common-base and common-emitter current gains in the reverse active region are much smaller than when the transistor is in the forward active region. This functional asymmetry is fundamentally due to the different doping levels of the emitter and collector. Therefore, in an NPN type transistor, although both the collector and emitter are N type doped, their electrical properties and functions are completely non-interchangeable. The emitter region has the highest doping level, followed by the collector region, and the base region has the lowest doping level. In addition, the physical dimensions of the three regions differ; the base region is very thin, and the collector area is larger than the emitter area. Due to this material structure of the bipolar transistor, a reverse bias can be provided to the collector junction, provided that this reverse bias is not so large as to damage the transistor. The purpose of heavy doping of the emitter is to increase the efficiency of electron injection from the emitter into the base region, thereby achieving the highest possible current gain. In the common-emitter configuration of a bipolar transistor, small changes in the voltage applied across the base and emitter terminals cause significant changes in the current between the emitter and collector. Utilizing this property allows for the amplification of input current or voltage. By treating the base of the bipolar transistor as the input terminal and the collector as the output terminal, this two-port network can be analyzed using Thévenin's theorem. Based on equivalent principles, the bipolar transistor can be viewed as a voltage-controlled current source or as a current-controlled voltage source. Furthermore, looking into the left side of the two-port network, the input impedance at the base is reduced to the base resistance, thus lowering the load requirement on the preceding stage circuit.

HUBER+SUHNER electrical component characteristics

The static characteristics of a sensor refer to the relationship between the output and input quantities for static input signals. Since the input and output quantities are independent of time in this case, their relationship, i.e., the static characteristics of the sensor, can be described by an algebraic equation without time variables, or by a characteristic curve plotted with the input quantity as the abscissa and the corresponding output quantity as the ordinate. The main parameters characterizing the static characteristics of a sensor include: linearity, sensitivity, hysteresis, repeatability, drift, etc. ① Linearity: Refers to the degree to which the actual relationship curve between the sensor's output and input deviates from the fitted straight line. It is defined as the ratio of the maximum deviation between the actual characteristic curve and the fitted straight line over the full scale range to the full-scale output value. ② Sensitivity: Sensitivity is an important indicator of a sensor's static characteristics. It is defined as the ratio of the increment in the output quantity to the corresponding increment in the input quantity that causes it. S is used to denote sensitivity. ③ Hysteresis: Hysteresis is the phenomenon where the input-output characteristic curves do not coincide during the change of the input quantity from small to large (forward stroke) and from large to small (reverse stroke). For the same magnitude of input signal, the output signals for the forward and reverse strokes are not equal; this difference is called the hysteresis error. ④ Repeatability: Repeatability refers to the degree of inconsistency in the characteristic curves obtained when the sensor's input quantity undergoes continuous multiple full-scale changes in the same direction. ⑤ Drift: Sensor drift refers to the phenomenon where the sensor's output changes over time while the input quantity remains constant. There are two causes of drift: one is the sensor's own structural parameters; the other is the surrounding environment (such as temperature, humidity, etc.). ⑥ Resolution: When the sensor's input slowly increases from a non-zero value, an observable change in output occurs after exceeding a certain increment; this input increment is called the sensor's resolution, i.e., the minimum input increment. ⑦ Threshold: When the sensor's input slowly increases from zero, an observable change in output occurs after reaching a certain value; this input value is called the sensor's threshold voltage.

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