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efb-elektronik electrical components are Schottky barrier diodes named after their inventor, Dr. Schottky. Schottky barrier diodes are not made using the principle of forming a PN junction by contact between P-type semiconductor and N-type semiconductor, but rather using the principle of a metal-semiconductor junction formed by contact between metal and semiconductor. Therefore, Schottky barrier diodes are also called metal-semiconductor (contact) diodes or surface barrier diodes; they are a type of hot-carrier diode.

efb-elektronik electrical components function

In DC circuits, capacitors are equivalent to open circuits. A capacitor is a component capable of storing electric charge and is one of the most commonly used electronic components. Starting with the structure of a capacitor: the simplest capacitor consists of two end plates and an insulating dielectric in between (including air). When energized, the plates become charged, creating a voltage (potential difference), but due to the insulating material in between, the entire capacitor does not conduct electricity. However, this situation holds under the premise that the capacitor's critical voltage (breakdown voltage) is not exceeded. We know that any material is relatively insulating; when the voltage across a material increases to a certain level, the material can conduct electricity. We call this voltage the breakdown voltage. Capacitors are no exception; once a capacitor breaks down, it is no longer an insulator. However, at the secondary school level, such voltages are not seen in circuits, so they operate below the breakdown voltage and can be regarded as insulators. But in AC circuits, because the direction of current changes over time according to a certain functional relationship. And the charging and discharging process of a capacitor takes time; during this period, a changing electric field is formed between the plates, and this electric field is also a function that varies with time. In fact, current passes through the capacitor in the form of an electric field.

efb-elektronik electrical components principle

Photoelectric sensors generally consist of 2 parts: processing channels and processing elements. Their basic principle is based on the photoelectric effect, converting changes in the measured quantity into changes in optical signals, and then further converting non-electrical signals into electrical signals with the help of photoelectric elements. The photoelectric effect refers to illuminating an object with light, which can be viewed as a series of photons with certain energy bombarding the object. At this time, photon energy is transferred to electrons, and the entire energy of one photon is absorbed by one electron at once. After gaining the energy transferred by the photon, the state of the electron changes, thereby causing the illuminated object to produce corresponding electrical effects. The photoelectric effect is usually divided into 3 categories: ① The phenomenon where electrons overflow from the object's surface under the action of light is called the external photoelectric effect, such as in phototubes and photomultiplier tubes; ② The phenomenon where the resistivity of an object changes under the action of light is called the internal photoelectric effect, such as in photoresistors and phototransistors; ③ The phenomenon where an object generates electromotive force in a certain direction under the action of light is called the photovoltaic effect, such as in photocells. Photoelectric detection methods have advantages such as high precision, fast response, and non-contact operation, and can measure many parameters. The sensor structure is simple and flexible in form, so photoelectric sensors are widely used in detection and control. Photoelectric sensors are key components for achieving photoelectric conversion in various photoelectric detection systems; they are devices that convert optical signals (visible and ultraviolet laser light) into electrical signals. Photoelectric sensors use photoelectric devices as conversion elements. They can be used to detect non-electrical physical quantities that directly cause changes in light intensity, such as light intensity, illumination, radiation temperature measurement, gas composition analysis, etc.; they can also be used to detect other non-electrical quantities that can be converted into changes in light intensity, such as part diameter, surface roughness, strain, displacement, vibration, speed, acceleration, as well as object shape and working status recognition. Photoelectric sensors have characteristics such as non-contact operation, fast response, and reliable performance, so they are widely used in industrial automation devices and robots. New photoelectric devices continue to emerge, especially the birth of CCD image sensors, which has opened a new chapter for the further application of photoelectric sensors.

efb-elektronik electrical components principle

The alternating current generated by the car alternator is rectified into direct current by the rectifier, but its waveform still has irregular fluctuations, which directly affects the accuracy of vehicle ignition; the output voltage cannot remain relatively constant, causing differences in spark plug ignition energy each time, which easily causes engine jitter, gear shift hesitation, slow and weak acceleration, unstable idle speed, and low efficiency of the car air conditioner. This greatly reduces the performance and service life of onboard electrical equipment; coupled with the aging of the circuit system in older cars and the increased circuit impedance, the impact on the vehicle becomes increasingly obvious. The role of the electronic rectifier is to help the car eliminate noise interference, stabilize output voltage, improve the instantaneous discharge capacity of the power system, increase torque output, accelerate throttle response, extend battery service life, shorten engine start-up time, and improve ignition efficiency, especially for small-displacement cars, where the effect is more noticeable. The semiconductor PN junction has large current under forward bias and small current under reverse bias. Rectifier diodes are PN junction diodes that use the unidirectional conductivity characteristic of the PN junction to convert alternating current into direct current. Devices with a current capacity below 1 amperes are usually called rectifier diodes, and those above 11 amperes are called rectifiers. Common semiconductor rectifiers include silicon rectifiers and selenium rectifiers, with many product specifications, voltages ranging from tens of volts to thousands of volts, and currents from a few amperes to thousands of amperes. Rectifiers are widely used in various forms of rectified power supplies. High-power rectified power supplies require rectifiers with large current capacity, high breakdown voltage, and good heat dissipation performance, but these devices have large junction areas and large junction capacitance, resulting in very low operating frequencies, generally below tens of kilohertz. Silicon material has a larger bandgap width and good thermal conductivity, making it suitable for manufacturing high-power rectifier devices. High-voltage silicon stacks are often used in high-voltage rectification devices; they consist of multiple rectifier device cores connected in series, and their reverse withstand voltage is determined by the withstand voltage of the cores and the number of series-connected cores, with maximum withstand voltage reaching hundreds of kilovolts. If a high-frequency rectification circuit is used at very high frequencies, when the period of the AC voltage is comparable to the recovery time from the on-state to the off-state of the rectifier, the rectifier no longer performs rectification on the high-frequency voltage. To adapt to high-frequency operation, gold doping is usually used in silicon rectifiers to shorten the lifetime of injected minority carriers, thereby reducing recovery time. To reduce the possibility of damage caused by overvoltage breakdown and improve the reliability of rectification devices, silicon avalanche rectifiers can be used. In such devices, when the reverse voltage exceeds the allowable peak value, uniform avalanche breakdown occurs across the entire PN junction, allowing the device to operate under high voltage and large current, thus withstanding considerable reverse surge power. Manufacturing such devices requires materials with few defects, uniform resistivity, flat junction surfaces, and appropriate protection of exposed junction areas to avoid surface breakdown. Selenium rectifiers have large overload capacity and strong ability to withstand reverse surge power. In the two basic types of rectifiers based on high-power diodes or thyristors, high-voltage AC power from the grid is converted into DC power by the rectifier.

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