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eht haustechn electrical component is a sensor resistor whose resistance changes with temperature. According to different temperature coefficients, it is divided into positive temperature coefficient thermistors and negative temperature coefficient thermistors. The resistance of a positive temperature coefficient thermistor increases as the temperature rises, while the resistance of a negative temperature coefficient thermistor decreases as the temperature rises; both belong to semiconductor devices.

eht haustechn electrical component principle

A Schottky diode is a metal-semiconductor device made by using noble metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at their contact surface. Because there are a large number of electrons in the N-type semiconductor and only a very small number of free electrons in the noble metal, electrons diffuse from the high-concentration B to the low-concentration A. Obviously, there are no holes in the metal A, so there is no hole diffusion movement from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, destroying surface electrical neutrality, thus forming a barrier whose electric field direction is B → A. However, under the action of this electric field, electrons in A also produce a drift movement from A → B, thereby weakening the electric field formed by the diffusion movement. After a space charge region of a certain width is established, the electron drift movement caused by the electric field and the electron diffusion movement caused by the concentration difference reach a relative balance, forming a Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region and increase the voltage withstand value of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 106% times higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

eht haustechn electrical component principle

The forward characteristic of the volt-ampere characteristic curve of a Zener diode is similar to that of an ordinary diode. In the reverse characteristic, when the reverse voltage is lower than the reverse breakdown voltage, the reverse resistance is very large and the reverse leakage current is extremely small. However, when the reverse voltage approaches the critical value of the reverse voltage, the reverse current suddenly increases, which is called breakdown. At this critical breakdown point, the reverse resistance suddenly drops to a very small value. Although the current changes within a large range, the voltage across the diode remains basically stable near the breakdown voltage, thereby realizing the voltage stabilization function of the diode.

eht haustechn electrical component principle

A photodiode is a semiconductor device that converts optical signals into electrical signals. Its core part is also a PN junction. Compared with ordinary diodes, the structural difference is that the PN junction area is made as large as possible to facilitate the reception of incident light, the electrode area is made as small as possible, and the junction depth of the PN junction is very shallow, generally less than 3 micrometers. Photodiodes work under reverse voltage. When there is no light, the reverse current is very small, called dark current. When there is light, photons carrying energy enter the PN junction and transfer energy to bound electrons on covalent bonds, causing some electrons to break away from covalent bonds, thereby generating electron-hole pairs, called photogenerated carriers. They participate in drift movement under the action of reverse voltage, causing the reverse current to increase significantly. The greater the light intensity, the greater the reverse current. This characteristic is called "photoconductivity." The current generated by a photodiode under general illumination is called photocurrent. If a load is connected to the external circuit, the load obtains an electrical signal, and this electrical signal changes correspondingly with the change in light. Photodiodes are photosensitive devices widely used in electronic circuits. Like ordinary diodes, photodiodes have a PN junction. The difference is that there is a transparent window on the casing of the photodiode to receive light irradiation and realize photoelectric conversion. The text symbol in circuit diagrams is generally VD.

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